Metallic-magnetic-domain-wall-based nonvolatile tunable resistor for memory and sensor applications

Patent metadata

Field	Value
Publication number	US-10210970-B2
Application number	US-201615160914-A
Country	US
Kind code	B2
Filing date	May 20, 2016
Priority date	May 21, 2015
Publication date	Feb 19, 2019
Grant date	Feb 19, 2019

Abstract

Control of electrical conductivity is provided via electrically conductive magnetic domain walls between magnetic domains. The magnetic domains are identical except for their magnetic configuration. Altering a configuration of the magnetic domains (e.g., by thermal treatment, application of a magnetic field, etc.) can alter the electrical resistance of a device. Such devices can be used as non-volatile information storage devices or as sensors.

First claim

The invention claimed is:

1. A nonvolatile tunable resistor comprising:
a first electrode;
a second electrode; and
an active medium sandwiched between the first and second electrodes;
wherein the active medium comprises a region having a uniform material composition;
wherein the region includes one or more magnetic domains;
wherein the magnetic domains differ only in their magnetic configuration;
wherein an electrical resistance between the first and second electrodes is substantially determined by a configuration of the magnetic domains according to magnetic domain wall conductivity;
wherein the configuration of the magnetic domains can be altered by application of a tuning input to the nonvolatile tunable resistor.

2. The nonvolatile tunable resistor of claim 1 , wherein the material composition is a material having a metal-insulator phase transition between a metallic phase that is electrically conductive and a non-metallic phase having reduced electrical conductivity relative to the metallic phase.

3. The nonvolatile tunable resistor of claim 2 , wherein the material composition is a material having anisotropic magnetic order in the non-metallic phase.

4. The nonvolatile tunable resistor of claim 1 , wherein a geometry of the active medium is configured such that altering the configuration of the magnetic domains can vary the electrical resistance by a factor of 10 or more.

5. The nonvolatile tunable resistor of claim 1 , wherein the tuning input comprises a magnetic field.

6. The nonvolatile tunable resistor of claim 1 , wherein the tuning input comprises thermal treatment.

7. The nonvolatile tunable resistor of claim 1 , wherein the tuning input comprises a strain.

8. The nonvolatile tunable resistor of claim 1 , wherein the tuning input comprises an electric field.

9. The nonvolatile tunable resistor of claim 1 , wherein the nonvolatile tunable resistor is configured as an information storage device.

10. The nonvolatile tunable resistor of claim 1 , wherein the nonvolatile tunable resistor is configured as a sensor.

Assignees

• Univ Leland Stanford Junior
• Riken

Inventors

• Ma Yue
• Cui Yongtao
• Ueda Kentaro
• Fujioka Jun
• Tokura Yoshinori
• Shen Zhixun
• Laughlin Robert B

Classifications

• H01C1/14 Primary

  Terminals or tapping points specially adapted for resistors; Arrangements of terminals or tapping points on resistors · CPC title

• H01L43/10

  Electricity · mapped topic

• H01C10/103

  by using means responding to magnetic or electric fields, e.g. by addition of magnetisable or piezoelectric particles to the resistive material, or by an electromagnetic actuator · CPC title

• H01L43/08

  Electricity · mapped topic

• H10N50/85

  Materials of the active region · CPC title