Plasma source for a plasma CVD apparatus and a manufacturing method of an article using the plasma source

Patent metadata

Field	Value
Publication number	US-10204767-B2
Application number	US-201815886486-A
Country	US
Kind code	B2
Filing date	Feb 1, 2018
Priority date	Nov 2, 2012
Publication date	Feb 12, 2019
Grant date	Feb 12, 2019

Abstract

A plasma source for a plasma CVD apparatus that includes an electrode group including four electrodes, which are a first electrode, a second electrode, a third electrode and a fourth electrode arranged in a row. The electrode group is connected to at least one AC power supply. A voltage supplied to two of the four electrodes is shifted in phase from a voltage supplied to the remaining two electrodes. A space to which a source gas is supplied is provided between the adjacent electrodes, and voltages applied to at least one set among the adjacent two electrodes are in the same phase.

First claim

What is claimed is:

1. A method of manufacturing an article, comprising:
positioning a processing object in a plasma CVD apparatus comprising a first electrode, a second electrode, a third electrode and a fourth electrode arrayed in a row in an order of the first, second, third and fourth electrodes;
supplying a source gas for film deposition from at least one interval between adjacent electrodes of the first, second, third and fourth electrodes;
conducting a first voltage applying process comprising applying a negative voltage to said first electrode and said second electrode adjacent to said first electrode, and applying a positive voltage to said third electrode and said fourth electrode adjacent to said third electrode; and
conducting a second voltage applying process comprising applying a positive voltage to said first electrode and said second electrode and applying a negative voltage to said third electrode and said fourth electrode,
wherein said first voltage applying process and said second voltage applying process are alternately conducted at every lapse of a predetermined time such that the film deposition is applied on the processing object.

2. A method of manufacturing an article according to claim 1 , wherein the supplying of the source gas comprises supplying the sources gas from each interval between the adjacent electrodes of the first, second, third and fourth electrodes.

3. A method of manufacturing an article according to claim 2 , wherein the supplying of the source gas comprises uniformly supplying the source gas to each interval between the adjacent electrodes of the first, second, third and fourth electrodes.

4. A method of manufacturing an article according to claim 3 , wherein each of the first, second, third and fourth electrodes is a hollow electrode.

5. A method of manufacturing an article according to claim 4 , further comprising:
supplying a reaction assist gas to each of the first, second, third and fourth electrode.

6. A method of manufacturing an article according to claim 3 , wherein each of the first, second, third and fourth electrodes is a hollow electrode having a slot configured to inject plasma.

7. A method of manufacturing an article according to claim 3 , wherein each of the first, second, third and fourth electrodes is a hollow electrode having a slot configured to inject plasma such that the slot has an elongated linear shape extending along a direction perpendicular to a direction of the first, second, third and fourth electrodes arrayed in the row.

8. A method of manufacturing an article according to claim 1 , wherein each of the first, second, third and fourth electrodes is a hollow electrode.

9. A method of manufacturing an article according to claim 1 , wherein each of the first, second, third and fourth electrodes is a hollow electrode having a slot configured to inject plasma.

10. A method of manufacturing an article according to claim 1 , wherein each of the first, second, third and fourth electrodes is a hollow electrode having a slot configured to inject plasma such that the slot has an elongated linear shape extending along a direction perpendicular to a direction of the first, second, third and fourth electrodes arrayed in the row.

11. A method of manufacturing an article, comprising:
positioning a processing object in a plasma CVD apparatus comprising a first electrode, a second electrode, a third electrode and a fourth electrode arrayed in a row in an order of the first, second, third and fourth electrodes;
supplying a source gas for film deposition from at least one interval between adjacent electrodes of the first, second, third and fourth electrodes;
conducting a first voltage applying process comprising applying a negative voltage to said first electrode and said fourth electrode and applying a positive voltage to said second electrode and said third electrode; and
conducting a second voltage applying process comprising applying a positive voltage to said first electrode and said fourth electrode and applying a negative voltage to said second electrode and said third electrode,
wherein said first voltage applying process and said second voltage applying process are alternately conducted at every lapse of a predetermined time such that the film deposition is applied on the processing object.

12. A method of manufacturing an article according to claim 11 , wherein the supplying of the source gas comprises supplying the sources gas from each interval between the adjacent electrodes of the first, second, third and fourth electrodes.

13. A method of manufacturing an article according to claim 12 , wherein the supplying of the source gas comprises uniformly supplying the source gas to each interval between the adjacent electrodes of the first, second, third and fourth electrodes.

14. A method of manufacturing an article according to claim 13 , wherein each of the first, second, third and fourth electrodes is a hollow electrode.

15. A method of manufacturing an article according to claim 14 , further comprising:
supplying a reaction assist gas to each of the first, second, third and fourth electrode.

16. A method of manufacturing an article according to claim 13 , wherein each of the first, second, third and fourth electrodes is a hollow electrode having a slot configured to inject plasma.

17. A method of manufacturing an article according to claim 13 , wherein each of the first, second, third and fourth electrodes is a hollow electrode having a slot configured to inject plasma such that the slot has an elongated linear shape extending along a direction perpendicular to a direction of the first, second, third and fourth electrodes arrayed in the row.

18. A method of manufacturing an article according to claim 11 , wherein each of the first, second, third and fourth electrodes is a hollow electrode.

19. A method of manufacturing an article according to claim 11 , wherein each of the first, second, third and fourth electrodes is a hollow electrode having a slot configured to inject plasma.

20. A method of manufacturing an article according to claim 11 , wherein each of the first, second, third and fourth electrodes is a hollow electrode having a slot configured to inject plasma such that the slot has an elongated linear shape extending along a direction perpendicular to a direction of the first, second, third and fourth electrodes arrayed in the row.

Assignees

• Asahi Glass Co Ltd
• Agc Inc

Inventors

• Kawahara Hirotomo
• Aomine Nobutaka
• Maeshige Kazunobu
• Aoshima Yuki
• Hanekawa Hiroshi

Classifications

• H01J37/3244

  Gas supply means · CPC title

• H01J37/32577

  Electrical connecting means · CPC title

• H01J37/32091

  the radio frequency energy being capacitively coupled to the plasma · CPC title

• C23C16/402

  Silicon dioxide · CPC title

• H01J37/32568 Primary

  Relative arrangement or disposition of electrodes; moving means · CPC title