Capacitor

Patent metadata

Field	Value
Publication number	US-10204744-B2
Application number	US-201615363336-A
Country	US
Kind code	B2
Filing date	Nov 29, 2016
Priority date	Jun 11, 2014
Publication date	Feb 12, 2019
Grant date	Feb 12, 2019

Abstract

A capacitor that includes a porous metallic base material; a phosphorus-containing layer on the porous metallic base material; a dielectric layer on the phosphorus-containing layer; and an electrode on the dielectric layer.

First claim

The invention claimed is:

1. A capacitor comprising:
a porous metallic base material that includes a high-porosity part in a central part thereof and a low-porosity part at a side face part thereof, wherein a first porosity of the high-porosity part is 30% to 80%, and a second porosity of the low-porosity part is 60% or less of the first porosity of the high-porosity part;
a phosphorus-containing layer on the porous metallic base material;
a dielectric layer on the phosphorus-containing layer; and
an electrode on the dielectric layer.

2. The capacitor according to claim 1 , wherein the porous metallic base material is selected from the group consisting of aluminum, tantalum, nickel, copper, titanium, niobium, iron, stainless steel and duralumin.

3. The capacitor according to claim 1 , wherein the porous metallic base material comprises aluminum.

4. The capacitor according to claim 1 , wherein the phosphorus-containing layer is 20 nm or less in thickness.

5. The capacitor according to claim 1 , wherein the phosphorus-containing layer is 0.5 to 10 nm in thickness.

6. A method for manufacturing a capacitor, the method comprising:
treating a surface of a porous metallic base material with a phosphoric acid-based solution to form a phosphorus-containing layer on the surface of the porous metallic base material, wherein the porous metallic base material includes a high-porosity part in a central part thereof and a low-porosity part at a side face part thereof, wherein a first porosity of the high-porosity part is 30% to 80%, and a second porosity of the low-porosity part is 60% or less of the first porosity of the high-porosity part;
forming a dielectric layer on the phosphorus-containing layer; and
forming an electrode on the dielectric layer.

7. The manufacturing method according to claim 6 , wherein the phosphoric acid-based solution is an aqueous solution of a phosphoric acid and/or a phosphate.

8. The manufacturing method according to claim 6 , wherein the phosphoric acid-based solution is an aqueous solution of ammonia phosphate.

9. The manufacturing method according to claim 6 , wherein the phosphoric acid-based solution is an aqueous solution of ammonium dihydrogen phosphate.

10. The manufacturing method according to claim 6 , wherein the phosphoric acid-based solution has a pH of 1 to 10.

11. The manufacturing method according to claim 6 , wherein the phosphoric acid-based solution has a pH of 4 to 7.

12. The manufacturing method according to claim 6 , wherein the dielectric layer is formed by a gas-phase method.

13. The manufacturing method according to claim 12 , wherein the gas-phase method is an atomic layer deposition method.

14. The manufacturing method according to claim 6 , further comprising, after the treating of the surface of the porous metallic base material, annealing the phosphorous-containing layer.

15. The manufacturing method according to claim 6 , wherein the porous metallic base material is selected from the group consisting of aluminum, tantalum, nickel, copper, titanium, niobium, iron, stainless steel and duralumin.

16. The manufacturing method according to claim 6 , wherein the porous metallic base material comprises aluminum.

17. The manufacturing method according to claim 6 , wherein the treating of the surface of the porous metallic base material with the phosphoric acid-based solution is carried out such that the phosphorus-containing layer is 20 nm or less in thickness.

18. The manufacturing method according to claim 6 , wherein the treating of the surface of the porous metallic base material with the phosphoric acid-based solution is carried out such that the phosphorus-containing layer is 0.5 to 10 nm in thickness.

Assignees

• Murata Manufacturing Co

Inventors

• Arakawa Takeo
• Saeki Hiromasa
• Inoue Noriyuki
• Iwaji Naoki

Classifications

• H01G9/15

  Solid electrolytic capacitors (H01G11/00 takes precedence) · CPC title

• H01G9/055

  Etched foil electrodes · CPC title

• H01G9/048

  characterised by their structure (H01G11/22 takes precedence) · CPC title

• H01G9/0036

  Formation of the solid electrolyte layer · CPC title

• H01G9/07

  Dielectric layers · CPC title