Polishing pad and method for manufacturing the same

Patent metadata

Field	Value
Publication number	US-10201886-B2
Application number	US-201515310053-A
Country	US
Kind code	B2
Filing date	May 14, 2015
Priority date	May 21, 2014
Publication date	Feb 12, 2019
Grant date	Feb 12, 2019

Abstract

Provided is a polishing pad capable of sufficiently reducing minute defects to be generated after polishing on a workpiece which are detected in measurement for a particle size of 26 nm or smaller and capable of providing the workpiece with excellent surface flatness. The polishing pad includes a polishing layer having a polishing surface to polish a workpiece, and includes, in the side opposite to the polishing surface of the polishing layer, an intermediate layer having an amount of deformation C larger than that of the polishing layer, a hard layer having an amount of deformation C smaller than that of the polishing layer, and a cushion layer having an amount of deformation C larger than that of the intermediate layer, in which each of the amounts of deformations C is defined as an amount of deformation in the case of compression in a thickness direction, and the intermediate layer, the hard layer, and the cushion layer are laminated in this order from the side of the polishing layer.

First claim

The invention claimed is:

1. A polishing pad comprising
a polishing layer having a polishing surface to polish a workpiece, and comprising, in a side opposite to the polishing surface of the polishing layer,
an intermediate layer having an amount of deformation C, which is defined as an amount of deformation in the case of compression in a thickness direction, larger than that of the polishing layer,
a hard layer having an amount of deformation C smaller than that of the polishing layer, and
a cushion layer having an amount of deformation C larger than that of the intermediate layer,
wherein the intermediate layer, the hard layer, and the cushion layer are laminated in this order from a side of the polishing layer, and an average opening diameter of openings in the polishing surface of the polishing layer is 10 to 50 μm.

2. A polishing pad comprising
a polishing layer having a polishing surface to polish a workpiece, and comprising, in a side opposite to the polishing surface of the polishing layer,
an intermediate layer having an amount of deformation C, which is defined as an amount of deformation in the case of compression in a thickness direction, larger than that of the polishing layer,
a hard layer having an amount of deformation C smaller than that of the polishing layer, and
a cushion layer having an amount of deformation C larger than that of the intermediate layer,
wherein the intermediate layer, the hard layer, and the cushion layer are laminated in this order from a side of the polishing layer,
the polishing layer, the intermediate layer, and the cushion layer each independently contain at least one resin selected from the group consisting of a polyurethane resin, a polysulfone resin, and a polyimide resin, and the hard layer contains at least one resin selected from the group consisting of a polyethylene terephthalate resin, a vinyl chloride resin, and a polyethylene resin.

3. A polishing pad comprising
a polishing layer having a polishing surface to polish a workpiece, and comprising, in a side opposite to the polishing surface of the polishing layer,
an intermediate layer having an amount of deformation C, which is defined as an amount of deformation in the case of compression in a thickness direction, larger than that of the polishing layer,
a hard layer having an amount of deformation C smaller than that of the polishing layer, and
a cushion layer having an amount of deformation C larger than that of the intermediate layer,
wherein the intermediate layer, the hard layer, and the cushion layer are laminated in this order from a side of the polishing layer,
the polishing layer, the intermediate layer, and the cushion layer are each a sheet formed by using a wet film-forming method, and a resin constituting the polishing layer, a resin constituting the intermediate layer, and a resin constituting the cushion layer have a 100% modulus of 8 to 25 MPa, 4 to 20 MPa, and 3 to 20 MPa, respectively.

4. The polishing pad according to claim 1 to be used for polishing a silicon wafer.

5. A method for manufacturing the polishing pad according to claim 1 , comprising:
laminating, on a polishing layer having a polishing surface to polish a workpiece and having a 100% modulus of 8 to 25 MPa, an intermediate layer having an amount of deformation C, which is defined as an amount of deformation in the case of compression in a thickness direction, larger than that of the polishing layer, a hard layer having an amount of deformation C smaller than that of the polishing layer, and a cushion layer having an amount of deformation C larger than that of the intermediate layer, in a side opposite to the polishing surface of the polishing layer, in this order from a side of the polishing layer.

6. A polishing pad comprising
a polishing layer having a polishing surface to polish a workpiece, and comprising, in a side opposite to the polishing surface of the polishing layer,
an intermediate layer having an amount of deformation C, which is defined as an amount of deformation in the case of compression in a thickness direction, larger than that of the polishing layer,
a hard layer having an amount of deformation C smaller than that of the polishing layer, and
a cushion layer having an amount of deformation C larger than that of the intermediate layer,
wherein the intermediate layer, the hard layer, and the cushion layer are laminated in this order from a side of the polishing layer,
the polishing layer has a thickness of 0.20 to 0.70 mm, the intermediate layer has a thickness of 0.20 to 0.60 mm, the hard layer has a thickness of 0.10 to 0.50 mm, the cushion layer has a thickness of 0.40 to 1.3 mm, and
an average opening diameter of openings in the polishing surface of the polishing layer is 10 to 50 μm.

7. A polishing pad comprising
a polishing layer having a polishing surface to polish a workpiece, and comprising, in a side opposite to the polishing surface of the polishing layer,
an intermediate layer having an amount of deformation C, which is defined as an amount of deformation in the case of compression in a thickness direction, larger than that of the polishing layer,
a hard layer having an amount of deformation C smaller than that of the polishing layer, and
a cushion layer having an amount of deformation C larger than that of the intermediate layer,
wherein the intermediate layer, the hard layer, and the cushion layer are laminated in this order from a side of the polishing layer,
the polishing layer has a thickness of 0.20 to 0.70 mm, the intermediate layer has a thickness of 0.20 to 0.60 mm, the hard layer has a thickness of 0.10 to 0.50 mm, the cushion layer has a thickness of 0.40 to 1.3 mm,
the polishing layer, the intermediate layer, and the cushion layer each independently contain at least one resin selected from the group consisting of a polyurethane resin, a polysulfone resin, and a polyimide resin, and the hard layer contains at least one resin selected from the group consisting of a polyethylene terephthalate resin, a vinyl chloride resin, and a polyethylene resin.

8. A polishing pad comprising
a polishing layer having a polishing surface to polish a workpiece, and comprising, in a side opposite to the polishing surface of the polishing layer,
an intermediate layer having an amount of deformation C, which is defined as an amount of deformation in the case of compression in a thickness direction, larger than that of the polishing layer,
a hard layer having an amount of deformation C smaller than that of the polishing layer, and
a cushion layer having an amount of deformation C larger than that of the intermediate layer,
wherein the intermediate layer, the hard layer, and the cushion layer are laminated in this order from a side of the polishing layer,
the polishing layer has a thickness of 0.20 to 0.70 mm, the intermediate layer has a thickness of 0.20 to 0.60 mm, the hard layer has a thickness of 0.10 to 0.50 mm, the cushion layer has a thickness of 0.40 to 1.3 mm,
the polishing layer, the intermediate layer, and the cushion layer are each a sheet formed by using a wet film-forming method, and a resin constituting the polishing layer, a resin constituting the intermediate layer, and a resin constituting the cushion layer have a 100% modulus of 8 to 25 MPa, 4 to 20 MPa, and 3 to 20 MPa, respectively.

9. The polishing pad according to claim 6 to be used for polishing a silicon wafer.

10. A method for manufacturing the polishing pad according to claim 6 , comprising:
laminating, on a polishing layer having a polishing surface to polish a workpiece and having a 100% modulus of 8 to 25 MPa, an intermediate layer having an amount of deformation C, which is defined as an

Assignees

• Fujibo Holdings Inc
• Shinetsu Handotai Kk

Inventors

• Sato Michito
• Ueno Junichi
• Ishii Kaoru
• Kawamura Yoshihide
• Yoshida Hiroshi
• Takagi Masataka

Classifications

• H10P52/402

  of semiconductor materials · CPC title

• B24B37/26

  characterised by the shape of the lapping pad surface, e.g. grooved · CPC title

• B24B37/22 Primary

  characterised by a multi-layered structure · CPC title

• H01L21/30625

  Electricity · mapped topic

• B24B37/24

  characterised by the composition or properties of the pad materials · CPC title