Optical sensor and solid-state imaging device, and signal reading methods therefor

Patent metadata

Field	Value
Publication number	US-10200641-B2
Application number	US-201515524701-A
Country	US
Kind code	B2
Filing date	Nov 16, 2015
Priority date	Nov 17, 2014
Publication date	Feb 5, 2019
Grant date	Feb 5, 2019

Abstract

One problem addressed by the present invention is to provide an optical sensor, a solid-state imaging device, and methods for reading the signals therefrom, which contribute greatly to the development of industry and the realization of a safer and more secure society. One solution according to the present invention is an optical sensor having a light-receiving element, storage capacitors that store a charge, and a transfer switch for transferring to the storage capacitors a charge generated by light input to the light-receiving element, wherein the storage capacitors are a floating diffusion capacitor and a lateral overflow integration capacitor, and the transfer switch is a non-LDD/MOS transistor, that is, a non-LDD/MOS transistor for which the impurity concentration of the drain region is reduced by 50%.

First claim

What is claimed is:

1. An optical sensor comprising:
a light-receiving element (PD), a transfer switch (T), an overflow switch (S), and a reset switch (R) connected in series in this order;
a floating diffusion capacitor (C FD ) and a source follower switch (SF) connected to wiring between the transfer switch (T) and the switch (S); and
a lateral overflow integration capacitor (C LOFIC ) connected to wiring between the switch (S) and the reset switch (R), wherein
the source follower switch (SF) is a MOS transistor, and
the transfer switch (T) is a non-LDD/MOS transistor for which the impurity concentration of a drain region is 50% less than an impurity concentration of a source region of the source follower switch (SF).

2. An optical sensor comprising:
a light-receiving element, storage capacitors that store a charge, a transfer switch for transferring to the storage capacitors a charge generated by light input to the light-receiving element, and a pixel signal output line per pixel; and
a signal reading path connected to the pixel signal output lines, wherein
the storage capacitors are a floating diffusion capacitor and a lateral overflow integration capacitor, and the transfer switch is a non-LDD/MOS transistor for which the impurity concentration of a drain region thereof is 1×10 20 impurities/cm 3 or less,
the signal reading path receives a first pixel output signal subjected to charge-voltage conversion by the floating diffusion capacitor, and a second pixel output signal subjected to charge-voltage conversion by combining the floating diffusion capacitor and the lateral overflow integration capacitor, and
the first pixel output signal is amplified in the signal reading path by a plurality of amplifiers that include at least one amplifier having an amplification factor greater than 1.

3. A multi-pixel optical sensor comprising:
a light-receiving element, storage capacitors that store a charge, and a transfer switch for transferring to the storage capacitors a charge generated by light input to the light-receiving element, the storage capacitors being a floating diffusion capacitor and a lateral overflow integration capacitor, and the transfer switch being a non-LDD/MOS transistor for which an impurity concentration of a drain region thereof is 1×10 20 impurities/cm 3 or less;
pixel column portions having pixel portions planarly arranged therein;
a pixel signal output line having the pixel column portions connected sequentially thereto; and
a signal reading path portion connected to the pixel signal output at a position downstream from a position where a last pixel portion of an array of the pixel column portions of the pixel signal output line is connected, wherein
the signal reading path portion comprises a plurality of signal paths, and at least two of the plurality of signal paths are respectively provided with amplification functions having different amplification factors, and
at least one of the amplification functions has an amplification factor greater than 1.

4. A signal reading method for an optical sensor comprising:
a light-receiving element, storage capacitors that store a charge, and a transfer switch for transferring to the storage capacitors a charge generated by light input to the light-receiving element, per pixel portion;
a sensor portion in which the storage capacitors are a floating diffusion capacitor and a lateral overflow integration capacitor, and the transfer switch is a non-LDD/MOS transistor for which the impurity concentration of a drain region thereof is 1×10 20 impurities/cm 3 or less;
a pixel signal output line having each pixel portion connected thereto; and
a signal reading path connected to the pixel signal output line,
the signal reading method comprising the steps of:
forming a first pixel output signal by converting a charge of a charge amount that contributes to reading by the floating diffusion capacitor to voltage, forming a second pixel output signal by combining the floating diffusion capacitor and the lateral overflow integration capacitor and converting a charge of a charge amount that contributes to reading to voltage, and inputting these two pixel output signals to the signal reading path, wherein
the first pixel output signal is amplified in the signal reading path by a plurality of amplifiers that include at least one amplifier having an amplification factor greater than 1.

5. An imaging device comprising:
a light-receiving element (PD), a transfer switch (T), an overflow switch (S), and a reset switch (R) connected in series in that order, a floating diffusion capacitor (C FD ) and a source follower switch (SF) connected to wiring between the transfer switch (T) and the switch (S), and a lateral overflow integration capacitor (C LOFIC ) connected to wiring between the switch (S) and the reset switch (R), wherein
the source follower switch (SF) is a MOS transistor,
the transfer switch (T) comprises a plurality of pixel portions serving as non-LDD/MOS transistors for which the impurity concentration of a drain region is 50% less than an impurity concentration of a source region of the source follower switch (SF), and the light-receiving elements (PD) of the plurality of pixel portions are arranged two-dimensionally and comprise a pixel array,
the plurality of pixel portions comprises pixel column output signal lines that are sequentially connected,
the pixel column output signal line comprises a column circuit portion connected thereto, and the column circuit portion receives a first pixel output signal subjected to charge-voltage conversion by the floating diffusion capacitor, and a second pixel output signal subjected to charge-voltage conversion by combining the floating diffusion capacitor and the lateral overflow integration capacitor, and
the first pixel output signal is amplified in the signal reading path by a plurality of amplifiers that include at least one amplifier having an amplification factor greater than 1.

6. A signal reading method for an imaging device comprising:
a light-receiving element (PD), a transfer switch (T), an overflow switch (S), and a reset switch (R) connected in series in that order, a floating diffusion capacitor (C FD ) and a source follower switch (SF) connected to wiring between the transfer switch (T) and the switch (S), and a lateral overflow integration capacitor (C LOFIC ) connected to wiring between the switch (S) and the reset switch (R), wherein
the source follower switch (SF) is a MOS transistor, the transfer switch (T) comprises a plurality of pixel portions serving as non-LDD/MOS transistors for which the impurity concentration of a drain region is 50% less than an impurity concentration of a source region of the source follower switch (SF), the light-receiving elements (PD) of the plurality of pixel portions are arranged two-dimensionally to constitute a pixel array, the plurality of pixel portions is sequentially connected to a pixel column output signal line, and the pixel column output signal line is connected to a column circuit portion,
the signal reading method comprising the steps of:
forming a first pixel output signal by converting a charge of a charge amount that contributes to reading by the floating diffusion capacitor to voltage, forming a second pixel output signal by combining the floating diffusion capacitor and the lateral overflow integration capacitor and converting a charge of a charge amount that contributes to reading to voltage, and inputting these two pixel output signals to the signal reading path, wherein
the first pixel output signal is amplified in the signal reading path by a plurality of amplifiers that include at least one amplifier having an amplification factor greater than 1.

Assignees

• Univ Tohoku

Inventors

• Sugawa Shigetoshi
• Kuroda Rihito
• Wakashima Shunichi

Classifications

• H04N25/76 Primary

  Addressed sensors, e.g. MOS or CMOS sensors · CPC title

• H04N25/77

  Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components · CPC title

• H04N25/771

  comprising storage means other than floating diffusion · CPC title

• H04N25/59 Primary

  by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance · CPC title

• H04N5/378

  Electricity · mapped topic