Device comprising dielectric interlayer

Patent metadata

Field	Value
Publication number	US-10199586-B2
Application number	US-201615221885-A
Country	US
Kind code	B2
Filing date	Jul 28, 2016
Priority date	Jul 28, 2016
Publication date	Feb 5, 2019
Grant date	Feb 5, 2019

Abstract

A process for preparing a device and a device including a substrate; an interlayer disposed on the substrate, wherein the interlayer comprises a cured film formed from an interlayer composition, wherein the interlayer composition comprises: an epoxy compound; a polyvinyl phenol; a melamine resin; a solvent; an optional surfactant; and an optional catalyst; a source electrode and a drain electrode disposed on a surface of the interlayer; a semiconductor layer disposed on the interlayer, wherein the semiconductor layer is disposed into a gap between the source and drain electrode; a back channel interface comprising an interface between the semiconductor layer and the interlayer, wherein the interlayer serves as a back channel dielectric layer for the device; a dielectric layer disposed on the semiconductor layer; a gate electrode disposed on the dielectric layer. Also an interlayer composition and an organic thin film transistor comprising the interlayer composition.

First claim

The invention claimed is:

1. A device comprising:
a substrate;
an interlayer disposed on the substrate, wherein the interlayer comprises a cured film formed from an interlayer composition, wherein the interlayer composition comprises:
an epoxy compound;

wherein the epoxy compound is an aliphatic epoxy compound or epoxy polymer made therefrom, wherein the aliphatic epoxy compound is a compound of the formula

wherein X is a saturated or unsaturated, linear, branched or cyclic aliphatic group having 1 to 60 carbon atoms and at least one oxygen atom;
wherein Y is selected from the group consisting of a glycidyl group, an epoxy group, an oxyalkyl (—OR) group, and a hydroxyl group, wherein R is an alkyl;
wherein R 1 is selected from the group consisting of hydrogen, alkyl, or OR 2 , wherein R 2 is a C 1 to C 3 alkyl group or an epoxy group;
wherein m is from about 1 to about 10;
wherein n is from about 1 to about 20; and
wherein q is from about 0 to about 10;
a polyvinyl phenol;
a melamine resin;
a solvent;
an optional surfactant; and
an optional catalyst;

a source electrode and a drain electrode disposed on a surface of the interlayer;
a semiconductor layer disposed on the interlayer, wherein the semiconductor layer is disposed into a gap between and over the source and drain electrode;
a back channel interface comprising an interface between the semiconductor layer and the interlayer, wherein the interlayer serves as a back channel dielectric layer for the device;
a gate dielectric layer disposed on the semiconductor layer;
a gate electrode disposed on the dielectric layer.

2. The device of claim 1 , wherein the substrate is selected from the group consisting of silicon, glass plate, plastic film, sheet, fabric, and synthetic paper.

3. The device of claim 1 , wherein the substrate is selected from the group consisting of polyester, polycarbonate, polyimide sheets, polyethylene terephthalate sheet, and polyethylene naphthalate sheet.

4. The device of claim 1 , wherein the polyvinyl phenol is selected from the group consisting of poly(4-vinylphenol), poly(vinylphenol)/poly(methyl acrylate), poly(vinylphenol)/poly(methyl methacrylate), poly(4-vinylphenol)/poly(vinyl methyl ketone), and combinations thereof.

5. The device of claim 1 , wherein the melamine resin is selected from the group consisting of poly(melamine-co-formaldehyde), methylated poly(melamine-co-formaldehyde), butylated poly(melamine-co-formaldehyde), isobutylated poly(melamine-co-formaldehyde), acrylated poly(melamine-co-formaldehyde), methylated/butylated poly(melamine-co-formaldehyde), and combinations thereof.

6. The device of claim 1 , wherein the melamine resin comprises a poly(melamine-co-formaldehyde) based polymer.

7. The device of claim 1 , wherein the cured film is formed by thermally curing the interlayer composition at a temperature of from about 100° C. to about 200° C.

8. The device of claim 1 , wherein the solvent is selected from the group consisting of propylene glycol methyl ether acetate, toluene, methyl isobutyl ketone, butylacetate, methoxypropylacetate, xylene, tripropyleneglycol monomethylether, dipropyleneglycol monomethylether, propoxylated neopentylglycoldiacrylate, and combinations thereof.

9. The device of claim 1 , wherein the interlayer cured film has a thickness of from about 0.2 to about 5 micrometers.

10. The device of claim 1 , wherein the interlayer cured film has a water contact angle of from about 65 degrees to about 95 degrees.

11. The device of claim 1 :
wherein the device is an organic thin film transistor, wherein the thin film transistor has a current on-off ratio of at least about 10 −5 .

12. The device of claim 1 :
wherein the device is an organic thin film transistor, wherein the thin film transistor has a sub-threshold slope of less than about 1 V/dec.

13. A device comprising:
a substrate;
an interlayer disposed on the substrate, wherein the interlayer comprises a cured film formed from an interlayer composition, wherein the interlayer composition comprises:
an epoxy compound;
wherein the epoxy compound of the interlayer composition is selected from the group consisting of 1,4-butanediyl diglycidyl ether of the formula

1,6-hexanediol diglycidyl ether of the formula

1,4-cyclohexanedimethanol diglycidyl ether of the formula

neopentyl glycol diglycidyl ether of the formula

1,2,3Propanetriol glycidyl ethers of the formula

trimethylolpropane triglycidyl ether of the formula

epichlorohydrin polymer of the formula

pentaerythritrol polyglycidyl ether of the formula

poly(ethylene glycol) diglycidyl ether of the formula

wherein n is from 2 to 15; and
poly(propylene glycol) diglycidyl ether of the formula

wherein n is from 2 to 10;
a polyvinyl phenol;
a melamine resin;
a solvent;
an optional surfactant; and
an optional catalyst;

a source electrode and a drain electrode disposed on a surface of the interlayer;
a semiconductor layer disposed on the interlayer, wherein the semiconductor layer is disposed into a gap between and over the source and drain electrode;
a back channel interface comprising an interface between the semiconductor layer and the interlayer, wherein the interlayer serves as a back channel dielectric layer for the device;
a gate dielectric layer disposed on the semiconductor layer;
a gate electrode disposed on the dielectric layer.

14. A process for preparing a device comprising:
providing a substrate;
disposing an interlayer composition on to the substrate, wherein the interlayer composition comprises:
an epoxy compound;

wherein the epoxy compound is an aliphatic epoxy compound or epoxy polymer made therefrom, wherein the aliphatic epoxy compound is a compound of the formula

wherein X is a saturated or unsaturated, linear, branched or cyclic aliphatic group having 1 to 60 carbon atoms and at least one oxygen atom;
wherein Y is selected from the group consisting of a glycidyl group, an epoxy group, an oxyalkyl (—OR) group, and a hydroxyl group, wherein R is an alkyl;
wherein R 1 is selected from the group consisting of hydrogen, alkyl, or OR 2 , wherein R 2 is a C 1 to C 3 alkyl group

Assignees

• Xerox Corp
• Palo Alto Res Ct Inc

Inventors

• Song Guiqin
• Mei Ping
• Hu Nan-Xing
• Whiting Gregory
• Abraham Biby Esther

Classifications

• H01L51/0541

  Electricity · mapped topic

• H01L2251/30

  Electricity · mapped topic

• H01L51/107 Primary

  Electricity · mapped topic

• H01L51/0096

  Electricity · mapped topic

• Y02E10/549

  Organic PV cells · CPC title