Piezoelectric element, stator for oscillatory wave motor, oscillatory wave motor, driving control system, optical apparatus, and method for making stator for oscillatory wave motor
US-9893269-B2 · Feb 13, 2018 · US
Piezoelectric element and piezoelectric element applied device
US10199559B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10199559-B2 |
| Application number | US-201615137240-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 25, 2016 |
| Priority date | May 28, 2015 |
| Publication date | Feb 5, 2019 |
| Grant date | Feb 5, 2019 |
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Abstract
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There is provided a piezoelectric element which includes a first electrode which is formed on a substrate, a piezoelectric layer which is formed on the first electrode, and is formed from a compound oxide having an ABO 3 type perovskite structure in which potassium (K), sodium (Na), niobium (Nb), and manganese (Mn) are provided, and a second electrode which is formed on the piezoelectric layer. The manganese includes bivalent manganese (Mn 2+ ), trivalent manganese (Mn 3+ ), and tetravalent manganese (Mn 4+ ). A molar ratio (Mn 2+ /Mn 3+ +Mn 4+ ) of the bivalent manganese to a sum of the trivalent manganese and the tetravalent manganese is equal to or greater than 0.31.
First claim
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What is claimed is: 1. A piezoelectric element comprising: a first electrode which is formed on a substrate; a piezoelectric layer which is formed on the first electrode, and is formed from a compound oxide having an ABO 3 type perovskite structure in which potassium (K), sodium (Na), niobium (Nb), and manganese (Mn) are provided; and a second electrode which is formed on the piezoelectric layer, wherein the manganese includes bivalent manganese (Mn 2+ ), trivalent manganese (Mn 3+ ), and tetravalent manganese (Mn 4+ ), and a molar ratio (Mn 2+ /Mn 3+ +Mn 4+ ) of the bivalent manganese to a sum of the trivalent manganese and the tetravalent manganese is equal to or greater than 0.31, wherein a content of the manganese is greater than 0.3 mol %, with respect to a total amount of metallic elements constituting a B site of the ABO 3 type perovskite structure. 2. The piezoelectric element according to claim 1 , wherein the molar ratio (Mn 2+ /Mn 3+ +Mn 4+ ) of the bivalent manganese to the sum of the trivalent manganese and the tetravalent manganese is equal to or smaller than 3.90. 3. A piezoelectric element applied device comprising: the piezoelectric element according to claim 2 . 4. The piezoelectric element according to claim 1 , wherein the compound oxide in the ABO 3 type perovskite structure has a composite represented by the following formula (1): (K X ,Na 1-X )(Nb 1-y ,Mn y )O 3 (1), wherein 0.1≤x≤0.9. 5. A piezoelectric element applied device comprising: the piezoelectric element according to claim 4 . 6. A piezoelectric element applied device comprising: the piezoelectric element according to claim 1 . 7. A piezoelectric element comprising: a first electrode which is formed on a substrate; a piezoelectric layer which is formed on the first electrode, and is formed from a compound oxide having an ABO 3 type perovskite structure in which potassium (K), sodium (Na), niobium (Nb), and manganese (Mn) are provided; and a second electrode which is formed on the piezoelectric layer, wherein the manganese includes bivalent manganese (Mn 2+ ), trivalent manganese (Mn 3+ ), and tetravalent manganese (Mn 4+ ), and a molar ratio (Mn 2+ /Mn 3+ +Mn 4+ ) of the bivalent manganese to a sum of the trivalent manganese and the tetravalent manganese is equal to or greater than 0.31, wherein a content of the manganese is equal to or smaller than 2 mol %, with respect to a total amount of metallic elements constituting a B site of the ABO 3 type perovskite structure. 8. A piezoelectric element applied device comprising: the piezoelectric element according to claim 7 . 9. The piezoelectric element according to claim 7 , wherein the molar ratio (Mn 2+ /Mn 3+ +Mn 4+ ) of the bivalent manganese to the sum of the trivalent manganese and the tetravalent manganese is equal to or smaller than 3.90. 10. A piezoelectric element applied device comprising: the piezoelectric element according to claim 9 . 11. The piezoelectric element according to claim 7 , wherein the compound oxide in the ABO 3 type perovskite structure has a composite represented by the following formula (1): (K X ,Na 1-X )(Nb 1-y ,Mn y )O 3 (1), wherein 0.1≤x≤0.9. 12. A piezoelectric element applied device comprising: the piezoelectric element according to claim 11 .
Assignees
Inventors
Classifications
Electricity · mapped topic
- H01L41/18Primary
Electricity · mapped topic
Electricity · mapped topic
having a cover around the piezoelectric thin film element · CPC title
Electricity · mapped topic
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Frequently asked questions
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- What does patent US10199559B2 cover?
- There is provided a piezoelectric element which includes a first electrode which is formed on a substrate, a piezoelectric layer which is formed on the first electrode, and is formed from a compound oxide having an ABO 3 type perovskite structure in which potassium (K), sodium (Na), niobium (Nb), and manganese (Mn) are provided, and a second electrode which is formed on the piezoelectric layer…
- Who is the assignee on this patent?
- Seiko Epson Corp
- What technology area does this patent fall under?
- Primary CPC classification H01L41/18. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Feb 05 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 4 related publications on this page (citations in our corpus or others sharing the same primary CPC).