Mesoscopic solar cell based on perovskite light absorption material and method for making the same

Patent metadata

Field	Value
Publication number	US-10199528-B2
Application number	US-201514985470-A
Country	US
Kind code	B2
Filing date	Dec 31, 2015
Priority date	Jul 16, 2013
Publication date	Feb 5, 2019
Grant date	Feb 5, 2019

Abstract

A mesoscopic solar cell, including: a conductive substrate, a hole blocking layer, a mesoporous nanocrystalline layer, an insulation separating layer, and a hole collecting layer, and perovskite light absorption materials. The hole blocking layer, the mesoporous nanocrystalline layer, the insulation separating layer, and the hole collecting layer are sequentially laminated on the conductive substrate. The perovskite semiconductor materials are filled in the mesoporous nanocrystalline layer, the insulation separating layer, and the hole collecting layer, which enables the mesoporous nanocrystalline layer to be an active light absorption layer operating as a photoanode, and enables the insulation separating layer to be a hole transporting layer.

First claim

The invention claimed is:

1. A mesoscopic solar cell, comprising: a conductive substrate, a hole blocking layer, a nanocrystalline layer comprising a material for absorbing light, an insulation separating layer comprising a material for transporting holes, and a hole collecting layer;
wherein:
each of the nanocrystalline layer, the insulation separating layer, and the hole collecting layer is a mesoporous film;
the hole blocking layer, the nanocrystalline layer, the insulation separating layer, and the hole collecting layer are sequentially laminated on the conductive substrate;
each of the nanocrystalline layer, the insulation separating layer, and the hole collecting layer is filled with a perovskite semiconductor material;
the material for absorbing light consists of the perovskite semiconductor material;
the material for transporting holes consists of the perovskite semiconductor material; and
the perovskite semiconductor material is simultaneously the material for absorbing light in the nanocrystalline layer and the material for transporting holes in the insulation separating layer.

2. The cell for claim 1 , wherein the nanocrystalline layer comprises a first mesoporous inorganic nano oxide film; the insulation separating layer comprises a second mesoporous inorganic nano oxide film; and the hole collecting layer comprises a mesoporous conductive film.

3. The cell for claim 2 , wherein the first mesoporous inorganic nano oxide film and the second mesoporous inorganic nano oxide film comprise titania, zirconia, alumina, Stannum, Zinc, nickel, silica, or a combination thereof.

4. The cell for claim 1 , wherein the perovskite semiconductor material is ABX 3 , where A is alkylamine or an alkali element, B is lead or tin, and X is iodine, bromide, or chlorine.

5. The cell for claim 3 , wherein the perovskite semiconductor material is ABX 3 , where A is alkylamine or an alkali element, B is lead or tin, and X is iodine, bromide, or chlorine.

6. The cell for claim 1 , wherein the hole blocking layer is a compact titania film.

7. The cell for claim 1 , wherein the filling of the perovskite semiconductor material is achieved through the way that a perovskite precursor solution is drop-casted on the hole collecting layer, and then penetrates pores of the nanocrystalline layer via the hole collecting layer from top to bottom.

8. A mesoscopic solar cell, comprising: a conductive substrate, a hole blocking layer, a nanocrystalline layer, an insulation separating layer, a hole collecting layer, and a perovskite semiconductor material;
wherein:
each of the nanocrystalline layer, the insulation separating layer, and the hole collecting layer is a mesoporous film;
the hole blocking layer, the nanocrystalline layer, the insulation separating layer, and the hole collecting layer are sequentially laminated on the conductive substrate;
the perovskite semiconductor material is filled in each of the nanocrystalline layer, the insulation separating layer, and the hole collecting layer;
the perovskite semiconductor material is simultaneously a light absorption material for absorbing light in the nanocrystalline layer and a material for transporting holes in the insulation separating layer; and
an organic p-type material is not filled in the nanocrystalline layer, the insulation separating layer, or the hole collecting layer.

9. The cell for claim 8 , wherein the nanocrystalline layer comprises a first mesoporous inorganic nano oxide film; the insulation separating layer comprises a second mesoporous inorganic nano oxide film; and the hole collecting layer comprises a mesoporous conductive film.

10. The cell for claim 9 , wherein the first mesoporous inorganic nano oxide film and the second mesoporous inorganic nano oxide film comprise titania, zirconia, alumina, stannum, zinc, nickel, silica, or a combination thereof.

11. The cell for claim 8 , wherein the perovskite semiconductor material is ABX 3 , where A is alkylamine or an alkali element, B is lead or tin, and X is iodine, bromide, or chlorine.

12. The cell for claim 10 , wherein the perovskite semiconductor material is ABX 3 , where A is alkylamine or an alkali element, B is lead or tin, and X is iodine, bromide, or chlorine.

13. The cell for claim 8 , wherein the hole blocking layer is a compact titania film.

14. The cell for claim 8 , wherein the filling of the perovskite semiconductor material is achieved through the way that a perovskite precursor solution is drop-casted on the hole collecting layer, and then penetrates pores of the nanocrystalline layer via the hole collecting layer from top to bottom.

Assignees

• Univ Huazhong Science Tech
• Wonder Solar Llc

Inventors

• Han Hongwei
• Ku Zhiliang

Classifications

• H01L51/422

  Electricity · mapped topic

• Y02E10/549

  Organic PV cells · CPC title

• H01L31/18 Primary

  Electricity · mapped topic

• H01L31/072

  Electricity · mapped topic

• Y02P70/521

  Cross-Sectional Technologies · mapped topic