Methods of forming a gate cap layer above a replacement gate structure

Patent metadata

Field	Value
Publication number	US-10199479-B2
Application number	US-201514928681-A
Country	US
Kind code	B2
Filing date	Oct 30, 2015
Priority date	Jan 18, 2012
Publication date	Feb 5, 2019
Grant date	Feb 5, 2019

Abstract

A method includes performing a first chemical mechanical polishing process to define a polished replacement gate structure having a dished upper surface, wherein the polished dished upper surface of the polished replacement gate structure has a substantially curved concave configuration. A gate cap layer is formed above the polished replacement gate structure, wherein a bottom surface of the gate cap layer corresponds to the polished dished upper surface of the polished replacement gate structure.

First claim

What is claimed:

1. A method, comprising:
forming a replacement gate structure in a gate opening defined by sidewall spacers positioned in a layer of insulating material;
performing a common etching process on at least said sidewall spacers and said layer of insulating material, wherein after completing said common etching process, an etched upper surface of said sidewall spacers is recessed relative to an etched upper surface of said layer of insulating material and an upper surface of said replacement gate structure extends above said etched upper surface of said layer of insulating material;
after performing said common etching process, performing a first chemical mechanical polishing process to remove at least portions of said replacement gate structure that extend above said etched upper surface of said layer of insulating material and thereby define a polished replacement gate structure having a polished upper surface; and
after performing said first chemical mechanical polishing process, forming a gate cap layer above said polished upper surface of said polished replacement gate structure.

2. The method of claim 1 , wherein forming said gate cap layer comprises:
forming a layer of gate cap material above said polished upper surface of said polished replacement gate structure; and
performing a second chemical mechanical polishing process on said layer of gate cap material so as to define a substantially planar polished upper surface of said gate cap layer.

3. The method of claim 1 , wherein said sidewall spacers are comprised of silicon nitride and said layer of insulating material is comprised of silicon dioxide.

4. The method of claim 3 , wherein said common etching process is performed using a C x H y F z based etch chemistry.

5. The method of claim 4 , wherein said common etching process is adjusted to provide etch selectivity between silicon nitride and silicon dioxide.

6. The method of claim 1 , wherein said replacement gate structure is exposed to said common etching process.

7. The method of claim 1 , wherein forming said replacement gate structure comprises performing a third chemical mechanical polishing process so that said upper surface of said replacement gate structure is substantially co-planar with an upper surface of said layer of insulating material, and wherein said common etching process is performed after said third chemical mechanical polishing process.

8. The method of claim 1 , wherein said replacement gate structure comprises a first metal layer and a second metal layer positioned on said first metal layer, and wherein after performing said first chemical mechanical polishing process, a portion of a polished upper surface of said second metal layer is recessed below a portion of a polished upper surface of said first metal layer.

9. The method of claim 1 , wherein performing said first chemical mechanical polishing process on said replacement gate structure further comprises performing said first chemical mechanical polishing process on said sidewall spacers, wherein after performing said first chemical mechanical polishing process, a portion of said polished upper surface of said replacement gate structure is recessed below a portion of a polished upper surface of said sidewall spacers, and wherein forming said gate cap layer comprises forming said gate cap layer on and in direct contact with said polished upper surface of said replacement gate structure and on and in direct contact with said polished upper surface of said sidewall spacers.

10. A method, comprising:
forming a replacement gate structure in a gate opening defined by sidewall spacers positioned in a layer of insulating material;
performing a common etching process on at least said sidewall spacers and said layer of insulating material, wherein after completing said common etching process, an etched upper surface of said sidewall spacers is recessed relative to an etched upper surface of said layer of insulating material and an upper surface of said replacement gate structure extends above said etched upper surface of said layer of insulating material;
after performing said common etching process, performing a first chemical mechanical polishing process to remove at least portions of said replacement gate structure that extend above said etched upper surface of said layer of insulating material and thereby define a polished replacement gate structure having a dished upper surface, said polished dished upper surface of said polished replacement gate structure defining a recess having a depth; and
after performing said first chemical mechanical polishing process, forming a gate cap layer above said polished dished upper surface of said polished replacement gate structure, said gate cap layer having a bottom surface that corresponds to said polished dished upper surface of said polished replacement gate structure.

11. The method of claim 10 , wherein said replacement gate structure comprises a first metal layer and a second metal layer positioned on said first metal layer, and wherein after performing said first chemical mechanical polishing process, a portion of a polished upper surface of said second metal layer is recessed below a portion of a polished upper surface of said first metal layer.

12. The method of claim 10 , wherein said replacement gate structure comprises a high-k gate insulation layer, a first metal layer positioned on said high-k gate insulation layer, and a second metal layer positioned on said first metal layer, and wherein after performing said first chemical mechanical polishing process, a portion of a polished upper surface of said second metal layer is recessed below a portion of a polished upper surface of said first metal layer and said portion of said polished upper surface of said first metal layer is recessed below a portion of a polished upper surface of said high-k gate insulation layer.

13. The method of claim 10 , wherein performing said first chemical mechanical polishing process on said replacement gate structure further comprises performing said first chemical mechanical polishing process on said sidewall spacers, wherein after performing said first chemical mechanical polishing process, a portion of said polished upper surface of said replacement gate structure is recessed below a portion of a polished upper surface of said sidewall spacers, and wherein forming said gate cap layer comprises forming said gate cap layer on and in direct contact with said polished upper surface of said replacement gate structure and on and in direct contact with said polished upper surface of said sidewall spacers.

Assignees

• Globalfoundries Inc

Inventors

• Grasshoff Gunter
• Labelle Catherine

Classifications

• H10P95/064

  the removal being chemical etching · CPC title

• H10P52/403

  of conductive or resistive materials · CPC title

• H10P50/283

  by chemical means · CPC title

• H10W20/077

  on sidewalls or on top surfaces of conductors (H10W20/076 takes precedence) · CPC title

• H10W20/069

  by forming self-aligned vias or self-aligned contact plugs · CPC title