Special construct for continuous non-uniform active region FinFET standard cells

Patent metadata

Field	Value
Publication number	US-10199378-B2
Application number	US-201715857202-A
Country	US
Kind code	B2
Filing date	Dec 28, 2017
Priority date	Jan 30, 2015
Publication date	Feb 5, 2019
Grant date	Feb 5, 2019

Abstract

Methods for abutting two cells with different sized diffusion regions and the resulting devices are provided. Embodiments include abutting a first cell having first drain and source diffusion regions and a second cell having second drain and source diffusion regions, larger than the first diffusion regions, by: forming a dummy gate at a boundary between the two cells; forming a continuous drain diffusion region having an upper portion crossing the dummy gate and encompassing the entire first drain diffusion region and part of the second drain diffusion region and having a lower portion beginning over the dummy gate and encompassing a remainder of the second drain diffusion region; forming a continuous source diffusion region that is the mirror image of the continuous drain diffusion region; and forming a poly-cut mask over the dummy gate between, but separated from, the continuous drain and source diffusion regions.

First claim

What is claimed is:

1. A device comprising:
a first cell having a first drain diffusion region and a first source diffusion region and a second cell having a second drain diffusion region and a second source diffusion region;
a dummy gate at a boundary between the first and second cells;
a continuous drain diffusion region having an upper portion crossing the dummy gate and encompassing the first drain diffusion region and a first part of the second drain diffusion region and having a lower portion beginning over the dummy gate and encompassing a second part of the second drain diffusion region;
a continuous source diffusion region having a lower portion crossing the dummy gate and encompassing the first source diffusion region and a first part of the second source diffusion region and having an upper portion beginning over the dummy gate and encompassing a second part of the second source diffusion region; and
a mask over the dummy gate between, but separated from, the continuous drain diffusion region and the continuous source diffusion region.

2. The device according to claim 1 , wherein the first diffusion regions are smaller than the second diffusion regions.

3. The device according to claim 1 , wherein the upper portion of the continuous drain diffusion region encompasses the entire first drain diffusion region.

4. The device according to claim 1 , wherein the second part of the lower portion of the continuous drain diffusion region encompasses a remainder of the second drain diffusion region.

5. The device according to claim 1 , wherein the lower portion of the continuous source diffusion region encompasses the entire first source diffusion region.

6. The device according to claim 1 , wherein the second part of the upper portion of the continuous source diffusion region encompasses a remainder of the second drain source region.

7. The device according to claim 1 , wherein the mask comprises a poly-cut mask.

8. The device according to claim 1 , wherein the lower portion of the continuous drain diffusion region and the upper portion of the continuous source diffusion region begin at an edge of the dummy gate and across the dummy gate.

9. The device according to claim 8 , wherein the first cell and the second cell are at the same potential.

10. The device according to claim 1 , wherein the lower portion of the continuous drain diffusion region and the upper portion of the continuous source diffusion region begin in the middle of the dummy gate and continue across the dummy gate.

11. A device comprising:
a first cell having a first drain diffusion region and a first source diffusion region and a second cell having a second drain diffusion region and a second source diffusion region;
a gate at a boundary between the first and second cells;
a continuous drain diffusion region having an upper portion crossing the gate and encompassing the first drain diffusion region and a first part of the second drain diffusion region and having a lower portion beginning over the gate and encompassing a second part of the second drain diffusion region;
a continuous source diffusion region having a lower portion crossing the gate and encompassing the first source diffusion region and a first part of the second source diffusion region and having an upper portion beginning over the gate and encompassing a second part of the second source diffusion region; and
a mask over the gate between, but separated from, the continuous drain diffusion region and the continuous source diffusion region.

12. The device according to claim 11 , wherein:
the gate is a dummy gate,
the first diffusion regions are smaller than the second diffusion regions, and
the mask comprises a poly-cut mask.

13. The device according to claim 11 , wherein the upper portion of the continuous drain diffusion region encompasses the entire first drain diffusion region.

14. The device according to claim 12 , wherein the second part of the lower portion of the continuous drain diffusion region encompasses a remainder of the second drain diffusion region.

15. The device according to claim 11 , wherein:
the lower portion of the continuous source diffusion region encompasses the entire first source diffusion region.

16. The device according to claim 11 , wherein the second part of the upper portion of the continuous source diffusion region encompasses a remainder of the second drain source region.

17. A device comprising:
abutted first and second cells having continuous and non-uniform active regions, wherein the active regions comprise source/drain (S/D) diffusion regions and fins,
wherein the active region of the second cell extends to an edge or center of a dummy gate, the dummy gate being at a boundary between the first and second cells,
wherein the fins are cut at the edge of the dummy gate or the center of the dummy gate, and
wherein the first cell and the second cell are at the same potential.

18. The device according to claim 17 , wherein the active region of the second cell extends to the edge of the dummy gate and the fins are cut at the edge of the dummy gate.

19. The device according to claim 17 , wherein the active region of the second cell extends to the center of the dummy gate and the fins are cut at the center of the dummy gate.

20. The device according to claim 17 , wherein the first S/D diffusion region is smaller than the second S/D diffusion region.

Assignees

• Globalfoundries Inc

Inventors

• Jain Navneet
• Kim Juhan
• Nguyen Andy
• Rashed Mahbub

Classifications

• H10W20/43

  Layouts of interconnections · CPC title

• H01L21/823475

  Electricity · mapped topic

• H01L23/528

  Electricity · mapped topic

• H01L21/823431

  Electricity · mapped topic

• H01L27/0886 Primary

  Electricity · mapped topic