Methods for selective deposition of metal silicides via atomic layer deposition cycles

Patent metadata

Field	Value
Publication number	US-10199230-B2
Application number	US-201514790862-A
Country	US
Kind code	B2
Filing date	Jul 2, 2015
Priority date	May 1, 2015
Publication date	Feb 5, 2019
Grant date	Feb 5, 2019

Abstract

Methods for selectively depositing a metal silicide layer are provided herein. In some embodiments, a method of selectively depositing a metal silicide layer includes: (a) providing a substrate having a first layer to a process chamber, wherein the first layer comprises a first surface and a feature formed in the first surface comprising an opening defined by one or more sidewalls and a bottom surface wherein the sidewalls comprise one of silicon oxide or silicon nitride and wherein the bottom surface comprises at least one of silicon or germanium; (b) exposing the substrate to a precursor gas comprising a metal halide; (c) purging the precursor gas from the process chamber using an inert gas; (d) exposing the substrate to a silicon containing gas; (e) purging the silicon containing gas from the process chamber using an inert gas; (f) repeating (b)-(e) to selectively deposit a metal silicide along the bottom surface to a predetermined thickness; and (g) annealing the substrate after depositing the metal silicide layer.

First claim

The invention claimed is:

1. A method of selectively depositing a metal silicide layer, comprising:
(a) providing a substrate having a first layer to a process chamber, wherein the first layer comprises a first surface and a feature formed in the first surface comprising an opening defined by one or more sidewalls and a bottom surface, wherein the sidewalls comprise one of silicon oxide or silicon nitride and wherein the bottom surface comprises at least one of silicon or germanium;
(b) exposing the substrate to a cleaning process comprising exposing the substrate to a remote plasma of a mixture of a fluorine-containing precursor and a hydrogen-containing precursor;
(c) exposing the substrate to a precursor gas comprising a metal halide;
(d) purging the precursor gas from the process chamber using an inert gas;
(e) exposing the substrate to a silicon containing gas comprising silane or derivatives thereof;
(f) purging the silicon containing gas from the process chamber using an inert gas;
(g) repeating (c)-(f) to selectively deposit a predominant amount of a metal silicide along the bottom surface to a predetermined thickness, wherein at least some deposition of the metal silicide occurs on the one or more sidewalls, and wherein the metal silicide comprises one of tantalum, hafnium, zirconium, or tungsten; and
(h) annealing the substrate after depositing the metal silicide layer.

2. The method of claim 1 , wherein the opening has a width of less than about 10 nm.

3. The method of claim 1 , wherein the precursor gas further comprises an inert gas.

4. The method of claim 1 , wherein a flow rate of the precursor gas and the silicon containing gas are each up to about 500 sccm.

5. The method of claim 1 , wherein a temperature of the process chamber during exposure to the precursor gas and exposure to the silicon containing gas is about 350 degrees Celsius to about 550 degrees Celsius.

6. The method of claim 1 , wherein a pressure of the process chamber during exposure to the precursor gas and exposure to the silicon containing gas is about 2 Tarr to about 15 Tarr.

7. The method of claim 1 , wherein the substrate is exposed to the precursor gas for about 1 to about 10 seconds.

8. The method of claim 1 , wherein the precursor gas is one of tantalum pentachloride (TaCl 5 ), hafnium tetrachloride (HfCl 4 ), zirconium tetrachloride (ZrCl 4 ), tungsten hexachloride (WCl 6 ), or tungsten pentachloride (WCl 5 ).

9. The method of claim 1 , wherein the substrate is exposed to the silicon containing gas for about 0.5 to about 5 seconds.

10. The method of claim 1 , wherein a temperature of the substrate during the anneal is about 500 degrees Celsius to about 1100 degrees Celsius.

11. The method of claim 1 , wherein the substrate is annealed for about 1 millisecond to about 1 minute.

12. The method of claim 1 , further comprising depositing a capping layer within the feature after deposition of the metal silicide layer.

13. The method of claim 12 , wherein the capping layer comprises titanium nitride (TiN).

14. The method of claim 12 , further comprising depositing a liner layer atop the capping layer.

15. The method of claim 14 , wherein the liner layer comprise one or more of titanium (Ti), tantalum (Ta), cobalt (Co), manganese (Mn), tungsten (W), or hafnium (Hf).

16. The method of claim 15 , further comprising depositing a conductive fill material to substantially fill the feature.

17. A method of selectively depositing a metal silicide layer, comprising:
(a) providing a substrate having a first layer to a process chamber, wherein the first layer comprises a first surface and a feature formed in the first surface comprising an opening having a width of less than about 10 nm and defined by one or more sidewalls and a bottom surface, wherein the sidewalls comprise one of silicon oxide or silicon nitride and wherein the bottom surface comprises at least one of silicon or germanium;
(b) exposing the substrate to a cleaning process comprising exposing the substrate to a remote plasma of a mixture of a fluorine-containing precursor and a hydrogen-containing precursor;
(c) exposing the substrate to a precursor gas comprising a metal halide for about 1 to about 10 seconds, wherein a flow rate of the precursor gas is up to about 500 sccm and wherein a pressure of the process chamber during exposure to the precursor gas is about 2 Tarr to about 15 Tarr;
(d) purging the precursor gas from the process chamber using an inert gas;
(e) exposing the substrate to a silicon containing gas comprising silane or derivatives thereof for about 0.5 to about 5 seconds, wherein a flow rate of the silicon containing gas is up to about 500 sccm and wherein a pressure of the process chamber during exposure to the silicon containing gas is about 2 Torr to about 15 Torr;
(f) purging the silicon containing gas from the process chamber using an inert gas;
(g) repeating (c)-(f) to selectively deposit a predominant amount of a metal silicide along the bottom surface to a predetermined thickness, wherein at least some deposition of the metal silicide occurs on the one or more sidewalls, and wherein the metal silicide comprises one of tantalum, hafnium, zirconium, or tungsten;
(h) annealing the substrate at a temperature of about 500 to about 1100 degrees Celsius for about 1 millisecond to about 1 minute after depositing the metal silicide layer;
(i) depositing a capping layer within the feature after depositing and annealing the metal silicide layer;
(j) depositing a liner layer atop the capping layer; and
(k) depositing a conductive fill material atop the liner layer to substantially fill the feature.

18. The method of claim 17 , wherein the precursor gas is one of tantalum pentachloride (TaCl 5 ), hafnium tetrachloride (HfCl 4 ), zirconium tetrachloride (ZrCl 4 ), tungsten hexachloride (WCl 6 ), or tungsten pentachloride (WCl 5 ).

19. A non-transitory computer readable medium, having instructions stored thereon which, when executed, cause a process chamber to perform a method for selectively depositing a metal silicide layer on a substrate having a first layer, wherein the first layer comprises a first surface and a feature formed in the first surface comprising an opening defined by one or more sidewalls and a bottom surface wherein the sidewalls comprise one of silicon oxide or silicon nitride and wherein the bottom surface comprises at least one of silicon or germanium, the method comprising:
(a) exposing the substrate to a cleaning process comprising exposing the substrate to a remote plasma of a mixture of a fluorine-containing precursor and a hydrogen-containing precursor;
(b) exposing the substrate to a precursor gas comprising a metal halide;
(c) purging the precursor gas from the process chamber using an inert gas;
(d) exposing the substrate to a silicon containing gas comprising silane or derivatives thereof;
(e) purging the silicon containing gas from the process chamber using an inert gas;
(f) repeating (b)-(e) to selectively deposit a predominant amount of a metal silicide along the bottom surface to a predetermined thickness, wherein at least some deposition of the metal silicide occurs on the one or more sidewalls, and wherein the metal silicide comprises one of tantalum, hafnium, zirconium, or tungsten; and
(g) annealing the substrate after depositing the metal silicide layer.

Assignees

• Applied Materials Inc

Inventors

• Ganguli Seshadri
• Yang Yixiong
• Zope Bhushan N
• Fu Xinyu
• Gelatos Avgerinos V
• Jian Guoqiang
• Zheng Bo

Classifications

• H10P14/432 Primary

  using selective deposition · CPC title

• H10W20/425

  Barrier, adhesion or liner layers · CPC title

• H10W20/047

  by introducing additional elements therein · CPC title

• H10W20/033

  in openings in dielectrics · CPC title

• H10D64/0112 Primary

  using conductive layers comprising silicides · CPC title