Process for manufacturing a microelectromechanical interaction system for a storage medium

Patent metadata

Field	Value
Publication number	US-10196262-B2
Application number	US-95894507-A
Country	US
Kind code	B2
Filing date	Dec 18, 2007
Priority date	Dec 20, 2006
Publication date	Feb 5, 2019
Grant date	Feb 5, 2019

Abstract

A process for manufacturing an interaction system of a microelectromechanical type for a storage medium, the interaction system provided with a supporting element and an interaction element carried by the supporting element, envisages the steps of: providing a wafer of semiconductor material having a substrate with a first type of conductivity (P) and a top surface; forming a first interaction region having a second type of conductivity (N), opposite to the first type of conductivity (P), in a surface portion of the substrate in the proximity of the top surface; and carrying out an electrochemical etch of the substrate starting from the top surface, the etching being selective with respect to the second type of conductivity (N), so as to remove the surface portion of the substrate and separate the first interaction region from the substrate, thus forming the supporting element.

First claim

The invention claimed is:

1. A microelectromechanical interaction system, comprising:
a single crystal that includes:
a monocrystalline semiconductor substrate;
a monocrystalline semiconductor first supporting element extending in cantilever fashion; and
a CMOS control circuit; and

a first interaction element carried by said first supporting element.

2. The microelectromechanical interaction system of claim 1 wherein the substrate includes a body region having a first conductivity type and the supporting element and interaction element have a second conductivity type opposite to the first conductivity type, the supporting element extending in cantilever fashion from the body region.

3. The microelectromechanical interaction system of claim 2 , wherein the substrate includes a resistor of the first conductivity type positioned within the supporting element.

4. The microelectromechanical interaction system of claim 1 , wherein the single crystal includes:
a monocrystalline semiconductor second supporting element extending in cantilever fashion, the second supporting element being spaced apart from the first supporting element; and the interaction system includes:
a monocrystalline semiconductor second interaction element carried by said second supporting element.

5. The microelectromechanical interaction system of claim 1 , wherein the single crystal includes a monocrystalline semiconductor second interaction element carried by said first supporting element and spaced laterally from the first interaction element.

6. A probe-storage device, comprising:
a storage medium; and
microelectromechanical interaction system that includes:
a single crystal that includes:
a monocrystalline semiconductor substrate, the substrate including:
a monocrystalline semiconductor first supporting element extending in cantilever fashion; and
a CMOS control circuit; and

a first interaction element carried by said first supporting element and structured to interact with the storage medium.

7. The probe-storage device of claim 6 , wherein the substrate includes a body region having a first conductivity type and the supporting element and interaction element have a second conductivity type opposite to the first conductivity type.

8. The probe-storage device of claim 7 , wherein the substrate includes a resistor of the first conductivity type positioned within the supporting element.

9. The probe-storage device of claim 6 , wherein the single crystal includes:
a monocrystalline semiconductor second supporting element extending in cantilever fashion, the second supporting element being spaced apart from the first supporting element; and the microelectromechanical interaction system includes:
a monocrystalline semiconductor second interaction element carried by said second supporting element and structured to interact with the storage medium.

10. The probe-storage device of claim 6 , wherein the single crystal includes a monocrystalline semiconductor second interaction element carried by said first supporting element and spaced laterally from the first interaction element.

11. The probe-storage device of claim 6 , wherein said first interaction element has nanometric dimensions, and a sharpened shape with a tip end facing away from said top surface of said substrate and toward the storage medium.

12. The microelectromechanical interaction system of claim 1 , wherein said first interaction element has nanometric dimensions, and a sharpened shape with a tip end facing away from said top surface of said substrate.

13. The microelectromechanical interaction system of claim 1 , wherein the single crystal includes a first epitaxial layer positioned directly on the first supporting element, wherein the first interaction element is a second epitaxial layer positioned directly on the first epitaxial layer.

14. The probe-storage device of claim 6 , wherein the single crystal includes a first epitaxial layer positioned directly on the first supporting element, wherein the first interaction element is a second epitaxial layer positioned directly on the first epitaxial layer.

15. A microelectromechanical interaction system, comprising:
a single crystal that includes:
a monocrystalline semiconductor substrate;
a CMOS control circuit positioned in the monocrystalline semiconductor substrate;
a first supporting element extending in cantilever fashion, the first supporting element including a first cantilevered portion of the substrate and a first epitaxial portion positioned directly on the first cantilevered portion; and

a first interaction element positioned directly on the first epitaxial portion of the first supporting element.

16. The microelectromechanical interaction system of claim 15 , wherein the substrate includes a body region having a first conductivity type and the supporting element and interaction element have a second conductivity type opposite to the first conductivity type, the supporting element extending in cantilever fashion from the body region.

17. The microelectromechanical interaction system of claim 16 , wherein the cantilevered portion of the substrate includes a resistor of the first conductivity type.

18. The microelectromechanical interaction system of claim 15 , wherein the single crystal includes:
a cantilevered monocrystalline semiconductor second supporting element, the second supporting element being spaced apart from the first supporting element and including a second cantilevered portion of the substrate and a second epitaxial portion positioned directly on the second cantilevered portion; and
a monocrystalline semiconductor second interaction element positioned directly on the second epitaxial portion of the second supporting element.

19. The microelectromechanical interaction system of claim 15 , wherein the single crystal includes a monocrystalline semiconductor second interaction element positioned directly on the first epitaxial portion of the first supporting element and spaced laterally from the first interaction element.

20. The microelectromechanical interaction system of claim 15 , wherein said first interaction element has nanometric dimensions, and a sharpened shape with a tip end facing away from a top surface of the first supporting element.

Assignees

• Barillaro Giuseppe
• Diligenti Alessandro
• Riva Caterina
• Campedelli Roberto
• Losa Stefano
• St Microelectronics Srl

Inventors

• Barillaro Giuseppe
• Diligenti Alessandro
• Riva Caterina
• Campedelli Roberto
• Losa Stefano

Classifications

• B81B2203/019

  characterized by their profile · CPC title

• B81C1/00539 Primary

  Wet etching · CPC title

• B81C2203/0714

  Forming the micromechanical structure with a CMOS process · CPC title

• B81B2201/07

  Data storage devices, static or dynamic memories · CPC title

• H01L27/10

  Electricity · mapped topic