Power conversion device

Patent metadata

Field	Value
Publication number	US-10194563-B2
Application number	US-201515500391-A
Country	US
Kind code	B2
Filing date	Jun 8, 2015
Priority date	Sep 9, 2014
Publication date	Jan 29, 2019
Grant date	Jan 29, 2019

Abstract

An object of the present invention is to provide a power conversion device that suppresses a bypass flow and has superior heat dissipation performance. The power conversion device according to the present invention includes a power semiconductor module 300 and a flow channel formation body 1000 on which the power semiconductor module 300 is disposed. The power semiconductor module 300 has a high thermal conductor 920 which is disposed at a position between a semiconductor chip and the flow channel formation body 1000 and a sealing material that seals a power semiconductor element and the high thermal conductor 920 . The high thermal conductor 920 has a fin protruding to the flow channel formation body 1000 at the side of the flow channel formation body 1000 and a part of the sealing material surrounding the fin and a leading edge of the fin are on almost the same plane.

First claim

The invention claimed is:

1. A power conversion device comprising:
a power semiconductor module comprising a power semiconductor element configured to convert a direct current into an alternating current; and
a flow channel formation body on which the power semiconductor module is disposed,
wherein the power semiconductor module comprises a high thermal conductor which is disposed at a position between the semiconductor element and the flow channel formation body, and a sealing material that seals the power semiconductor element and the high thermal conductor,
the high thermal conductor comprises a fin protruding toward the flow channel formation body at a side of the flow channel formation body, and
a portion of the sealing material that surrounds and does not cover the high thermal conductor and a leading edge of the fin are on a same plane.

2. The power conversion device according to claim 1 , wherein the leading edge of the fin comprises a same material as does the sealing material.

3. The power conversion device according to claim 1 , wherein the fin is formed by grinding the sealing material sealing the high thermal conductor in a groove shape.

4. The power conversion device according to claim 1 , wherein the sealing material comprises a sealing portion to secure airtightness of a flow channel when the power semiconductor module is disposed on the flow channel formation body.

5. The power conversion device according to claim 3 , wherein the fin is formed in a pin fin shape.

6. The power conversion device according to any one of claim 1 , wherein the high thermal conductor is formed of a material containing carbon.

7. The power conversion device according to claim 1 , wherein, in the sealing material, a surface of a flow channel side of the flow channel formation body is plated.

8. A method of manufacturing a power semiconductor module including a power semiconductor element converting a direct current into an alternating current, a high thermal conductor thermally connected to the semiconductor element, and a sealing material sealing the power semiconductor element and the high thermal conductor, the method comprising:
a first step of sealing the high thermal conductor with the sealing material; and
a second step of processing the sealing material and the high thermal conductor integrally and forming a fin such that a portion of the sealing material that surrounds and does not cover the high thermal conductor and a leading edge of the fin are on a same plane.

9. The method of manufacturing a power semiconductor module according to claim 8 , wherein, in the first step, the sealing material covers a surface of the high thermal conductor opposite to a side where the power semiconductor element is disposed and seals the high thermal conductor.

10. The method of manufacturing a power semiconductor module according to claim 8 , wherein the fin is formed by grinding the sealing material sealing the high thermal conductor in a groove shape.

11. The power conversion device according to claim 1 , wherein the high thermal conductor comprises a plurality of fins including the fin, the fins are spaced by respective gaps, and portions of the high thermal conductor disposed between the fins are exposed from the sealing material.

Assignees

• Hitachi Automotive Systems Ltd
• Hitachi Automotive Systems Ltd

Inventors

• Tsuyuno Nobutake
• Ide Eiichi
• Tokuyama Takeshi

Classifications

• H10W90/811

  Multiple chips on leadframes · CPC title

• H10W74/00

  Encapsulations, e.g. protective coatings · CPC title

• H10W70/442

  of multiple leadframes in a single chip · CPC title

• H10W90/00

  Package configurations · CPC title

• H10W74/127

  characterised by arrangements for sealing or adhesion · CPC title