Dual-mode envelope tracking power management circuit

Patent metadata

Field	Value
Publication number	US-10193502-B2
Application number	US-201715433246-A
Country	US
Kind code	B2
Filing date	Feb 15, 2017
Priority date	Feb 26, 2016
Publication date	Jan 29, 2019
Grant date	Jan 29, 2019

Abstract

A dual-mode envelope tracking (ET) power management circuit is provided. An ET amplifier(s) in the dual-mode ET power management circuit is capable of supporting normal-power user equipment (NPUE) mode and high-power user equipment (HPUE) mode. In the NPUE mode, the ET amplifier(s) amplifies a radio frequency (RF) signal(s) to an NPUE voltage based on a supply voltage for transmission in an NPUE output power. In the HPUE mode, the ET amplifier(s) amplifies the RF signal(s) to an HPUE voltage higher than the NPUE voltage based on a boosted supply voltage higher than the supply voltage for transmission in an HPUE output power higher than the NPUE output power. The ET amplifier(s) maintains a constant load line between the NPUE mode and the HPUE mode. By maintaining the constant load line, it is possible to maintain efficiency of the ET amplifier(s) in both the NPUE mode and the HPUE mode.

First claim

What is claimed is:

1. A dual-mode envelope tracking (ET) power management circuit comprising:
at least one ET amplifier coupled to the RF transmission circuit and having a preconfigured load line and configured to support a normal-power user equipment (NPUE) mode and a high-power user equipment (HPUE) mode, wherein:
in the NPUE mode, the at least one ET amplifier is further configured to amplify at least one radio frequency (RF) signal to an NPUE voltage based on a supply voltage to cause the at least one RF signal being transmitted from an RF transmission circuit at an NPUE output power in an NPUE RF spectrum; and
in the HPUE mode, the at least one ET amplifier is further configured to amplify the at least one RF signal to an HPUE voltage higher than the NPUE voltage based on a boosted supply voltage higher than the supply voltage to cause the at least one RF signal being transmitted from the RF transmission circuit at an HPUE output power higher than the NPUE output power in an HPUE RF spectrum; and

a power management circuit configured to:
provide the supply voltage to the at least one ET amplifier when the at least one ET amplifier operates in the NPUE mode; and
provide the boosted supply voltage to the at least one ET amplifier when the at least one ET amplifier operates in the HPUE mode;

wherein the preconfigured load line of the at least one ET amplifier is maintained constant to match an impedance of the RF transmission circuit between the NPUE mode and the HPUE mode.

2. The dual-mode ET power management circuit of claim 1 wherein the HPUE RF spectrum corresponds to long-term evolution (LTE) band forty-one.

3. The dual-mode ET power management circuit of claim 1 wherein the NPUE output power corresponds to power class three and the HPUE output power corresponds to power class two.

4. The dual-mode ET power management circuit of claim 1 wherein the boosted supply voltage is less than or equal to two times the supply voltage.

5. The dual-mode ET power management circuit of claim 1 wherein the at least one ET amplifier comprises:
a voltage input configured to receive the supply voltage in the NPUE mode or the boosted supply voltage in the HPUE mode; and
a voltage output configured to output the at least one RF signal at the NPUE voltage in the NPUE mode or output the at least one RF signal at the HPUE voltage in the HPUE mode.

6. The dual-mode ET power management circuit of claim 5 further comprising:
at least one offset capacitor provided between the voltage output of the at least one ET amplifier and a signal output coupled to the RF transmission circuit; and
at least one charge pump configured to provide an electrical current to the signal output.

7. The dual-mode ET power management circuit of claim 6 wherein in the NPUE mode, the at least one ET amplifier is further configured to:
receive the supply voltage via the voltage input;
amplify the at least one RF signal to the NPUE voltage based on an NPUE look-up-table (LUT); and
output the at least one RF signal at the NPUE voltage via the voltage output.

8. The dual-mode ET power management circuit of claim 7 wherein in the NPUE mode, the at least one offset capacitor is configured to increase the NPUE voltage by an offset voltage to provide an NPUE output voltage at the signal output, the NPUE output voltage and the electrical current provided by the at least one charge pump causing the at least one RF signal to be transmitted at the NPUE output power from the RF transmission circuit coupled to the signal output.

9. The dual-mode ET power management circuit of claim 8 wherein in the NPUE mode:
the NPUE output voltage is greater than or equal to an NPUE minimum output voltage and less than or equal to an NPUE maximum output voltage; and
the supply voltage equals the NPUE maximum output voltage minus the offset voltage and plus a top headroom voltage.

10. The dual-mode ET power management circuit of claim 6 wherein in the HPUE mode, the at least one ET amplifier is further configured to:
receive the boosted supply voltage via the voltage input;
amplify the at least one RF signal to the HPUE voltage based on an HPUE look-up-table (LUT); and
output the at least one RF signal at the HPUE voltage via the voltage output.

11. The dual-mode ET power management circuit of claim 10 wherein in the HPUE mode, the at least one offset capacitor is configured to increase the HPUE voltage by an offset voltage to provide an HPUE output voltage at the signal output, the HPUE output voltage and the electrical current provided by the at least one charge pump causing the at least one RF signal to be transmitted at the HPUE output power from the RF transmission circuit coupled to the signal output.

12. The dual-mode ET power management circuit of claim 11 wherein in the HPUE mode:
the HPUE output voltage is greater than or equal to an HPUE minimum output voltage and less than or equal to an HPUE maximum output voltage; and
the boosted supply voltage equals the HPUE maximum output voltage minus the offset voltage and plus a top headroom voltage.

13. The dual-mode ET power management circuit of claim 12 wherein in the HPUE mode, the at least one ET amplifier is further configured to amplify the at least one RF signal to the HPUE voltage based on a clipped HPUE LUT generated by bottom clipping the HPUE LUT to increase the offset voltage.

14. The dual-mode ET power management circuit of claim 13 wherein in the HPUE mode, the clipped HPUE LUT causes the HPUE maximum output voltage to increase without increasing the boosted supply voltage.

15. The dual-mode ET power management circuit of claim 6 wherein:
the at least one ET amplifier comprises:
a first ET amplifier comprising a first voltage input and a first voltage output; and
a second ET amplifier comprising a second voltage input and a second voltage output; and

the at least one charge pump comprises:
a first charge pump coupled to the first ET amplifier, the first charge pump configured to generate a first boosted supply voltage; and
a second charge pump coupled to the second ET amplifier, the second charge pump configured to generate a second boosted supply voltage;
wherein the first boosted supply voltage and the second boosted supply voltage are greater than the supply voltage and less than or equal to two times the supply voltage.

16. The dual-mode ET power management circuit of claim 15 wherein in the HPUE mode:
the first ET amplifier is configured to:
receive the boosted supply voltage via the first voltage input;
amplify at least one first RF signal to the HPUE voltage based on the boosted supply voltage; and
output the at least one first RF signal at the HPUE voltage via the first voltage output; and

the power management circuit is further configured to couple the second charge pump to the first voltage input of the first ET amplifier to provide the second boosted supply voltage to the first voltage input of the first ET amplifier as the boosted supply voltage.

17. The dual-mode ET power management circuit of claim 16 wherein the second ET amplifier is turned off.

18. The dual-mode ET power management circuit of claim 15 wherein in the HPUE mode:
the second ET amplifier is configured to:
receive the boosted supply voltage via the second voltage input;
amplify at least one second RF signal to the HPUE voltage based on the boosted supply voltage; and
output the at least one second RF signal at the HPUE voltage via the second voltage output; and

the power management circuit is further conf

Assignees

• Qorvo Us Inc

Inventors

• Khlat Nadim
• Folkmann Andrew F
• Kay Michael R
• Gorisse Philippe

Classifications

• H03F1/0211 Primary

  with control of the supply voltage or current · CPC title

• H03F3/19

  with semiconductor devices only · CPC title

• H03F2200/432

  Two or more amplifiers of different type are coupled in parallel at the input or output, e.g. a class D and a linear amplifier, a class B and a class A amplifier · CPC title

• H03F3/217

  Class D power amplifiers; Switching amplifiers · CPC title

• H03F3/45475

  using IC blocks as the active amplifying circuit · CPC title