Light emitting device manufacturing method and apparatus thereof

Patent metadata

Field	Value
Publication number	US-10193098-B2
Application number	US-201815995838-A
Country	US
Kind code	B2
Filing date	Jun 1, 2018
Priority date	Nov 10, 2016
Publication date	Jan 29, 2019
Grant date	Jan 29, 2019

Abstract

A method of manufacturing a light emitting device includes providing a substrate and forming a plurality of photosensitive bumps over the substrate. The method also includes forming a photosensitive layer over the plurality of photosensitive bumps and patterning the photosensitive layer to form a recess through the photosensitive layer to expose a surface. The method also includes disposing an organic emissive layer on the surface, and removing the patterned photosensitive layer.

First claim

The invention claimed is:

1. A method of manufacturing a light emitting device, comprising:
providing a substrate;
forming a plurality of photosensitive bumps over the substrate;
forming a photosensitive layer over the plurality of photosensitive bumps;
patterning the photosensitive layer to form a recess through the photosensitive layer to expose a surface;
disposing an organic emissive layer on the surface;
removing the patterned photosensitive layer; and
forming a buffer layer between the photosensitive layer and the plurality of photosensitive bumps.

2. The method of manufacturing a light emitting device in claim 1 , wherein the buffer layer is organic and includes fluorine.

3. The method of manufacturing a light emitting device in claim 1 , further comprising removing a portion of the buffer layer to partially expose the plurality of photosensitive bumps.

4. The method of manufacturing a light emitting device in claim 1 , further comprising forming a first electrode between the substrate and the plurality of photosensitive bumps.

5. The method of manufacturing a light emitting device in claim 3 , wherein the first electrode is partially covered by the plurality of photosensitive bumps.

6. The method of manufacturing a light emitting device in claim 4 further comprising forming a first type carrier injection layer between the first electrode and the photosensitive layer.

7. The method of manufacturing a light emitting device in claim 1 , further comprising forming a carrier transportation layer over the organic emissive layer.

8. The method of manufacturing a light emitting device in claim 5 , further comprising forming a first type carrier transporation layer between the first electrode and the photosensitive layer.

9. The method of manufacturing a light emitting device in claim 1 , further comprising forming a carrier injection layer over the organic emissive layer.

10. The method of manufacturing a light emitting device in claim 1 , further comprising forming a second electrode over the organic emissive layer.

11. The method of manufacturing a light emitting device in claim 1 , wherein forming the first electrode is performed before forming the plurality of photosensitive bumps.

12. The method of manufacturing a light emitting device in claim 1 , wherein forming the buffer layer is performed before forming the photosensitive layer.

13. The method of manufacturing a light emitting device in claim 1 , wherein the buffer layer is formed by spin coating.

14. The method of manufacturing a light emitting device in claim 6 , further comprising heating the buffer layer to a temperature about 5° C. to about 10° C. below the glass temperature of the first type carrier injection layer.

15. The method of manufacturing a light emitting device in claim 14 , wherein the heating operation of the buffer layer is between about 1 to about 10 minutes.

16. The method of manufacturing a light emitting device in claim 1 , further comprising patterning the photosensitive layer to form a recess through the photosensitive layer to expose a portion of the buffer layer.

17. The method of manufacturing a light emitting device in claim 3 , wherein removing a portion of the buffer layer is performed by wet etch.

18. The method of manufacturing a light emitting device in claim 17 , wherein the buffer layer is carved out following a dimension of an opening width of the recess of the photosensitive layer.

19. The method of manufacturing a light emitting device in claim 1 , further comprising forming an undercut into the buffer layer.

20. The method of manufacturing a light emitting device in claim 19 , wherein the the undercut is formed toward the topmost point of one of the plurality of photosensitive bumps.

21. The method of manufacturing a light emitting device in claim 1 , wherein forming the plurality of photosensitive bumps further comprises forming a photosensitive layer over the substrate, and removing a portion of the photosensitive layer.

22. The method of manufacturing a light emitting device in claim 1 , further comprising heating the photosensitive layer to a predetermined temperature, and exposing the photosensitive layer under a designated wavelength.

23. The method of manufacturing a light emitting device in claim 1 , further comprising rinsing the photosensitive layer.

24. The method of manufacturing a light emitting device in claim 1 , further comprising performing a cleaning operation with a cleaning agent to clean exposed surfaces of the plurality of photosensitive bumps after forming the plurality of photosensitive bumps.

25. The method of manufacturing a light emitting device in claim 24 , wherein the cleaning agent is a heated De-Ionized water with a temperature between about 30° C. and about 80° C.

26. The method of manufacturing a light emitting device in claim 24 , further comprising introducing ultrasonics into the cleaning agent.

27. The method of manufacturing a light emitting device in claim 24 , further comprising performing a heating operation to remove the cleaning agent after the cleaning operation.

28. The method of manufacturing a light emitting device in claim 27 , wherein the substrate and the plurality of photosensitive bumps are heated to a temperature between 80° C. and 110° C. during the heating operation.

29. The method of manufacturing a light emitting device in claim 27 , wherein an compressed air is introduced to the exposed surfaces to help remove the clean agent during the heating operation.

30. The method of manufacturing a light emitting device in claim 27 , further comprising treating the exposed surfaces with an O 2 , N 2 , or Ar plasma after the heating operation.

31. The method of manufacturing a light emitting device in claim 27 , further comprising treating the exposed surfaces with an ozone gas after the heating operation.

Assignees

• Int Tech Co Ltd

Inventors

• Chen Cheng-Hsin
• Chen Huei-Siou
• Wei Li-Chen

Classifications

• H01L51/56

  Electricity · mapped topic

• H01L51/5072

  Electricity · mapped topic

• H01L51/5203 Primary

  Electricity · mapped topic

• H01L51/5092

  Electricity · mapped topic

• H01L51/5056

  Electricity · mapped topic