Semiconductor device and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-10192995-B2
Application number	US-201615131298-A
Country	US
Kind code	B2
Filing date	Apr 18, 2016
Priority date	Apr 28, 2015
Publication date	Jan 29, 2019
Grant date	Jan 29, 2019

Abstract

A semiconductor device includes a semiconductor, a first conductor, a second conductor, a third conductor, a fourth conductor, a first insulator, a second insulator, a third insulator, and a fourth insulator. The first conductor and the semiconductor partly overlap with each other with the first insulator positioned therebetween. The second conductor and the third conductor have regions in contact with the semiconductor. The semiconductor has a region in contact with the second insulator. The fourth insulator has a first region and a second region. The first region is thicker than the second region. The first region has a region in contact with the second insulator. The second region has a region in contact with the third insulator. The fourth conductor and the second insulator partly overlap with each other with the fourth insulator positioned therebetween.

First claim

The invention claimed is:

1. A semiconductor device comprising:
a first insulator comprising a first region and a second region thinner than the first region;
a second insulator on and in contact with the first region of the first insulator;
a third insulator on and in contact with the second region of the first insulator;
a semiconductor over the second insulator;
a fourth insulator over the semiconductor; and
a first conductor overlapping the semiconductor with the fourth insulator interposed therebetween,
wherein the third insulator comprises fluorine,
wherein the amount of hydrogen released from the third insulator when converted into hydrogen molecules is less than or equal to 6×10 14 molecules/cm 2 in thermal desorption spectroscopy analysis at a surface temperature of a film of higher than or equal to 100° C. and lower than or equal to 700° C., and
wherein the third insulator does not overlap with the semiconductor.

2. The semiconductor device according to claim 1 , comprising a fourth conductor below the first insulator and overlapping with the semiconductor with the first insulator interposed therebetween.

3. The semiconductor device according to claim 1 , wherein the semiconductor and the second region of the first insulator do not overlap with each other.

4. The semiconductor device according to claim 1 , comprising a second conductor and a third conductor each on and in contact with the semiconductor.

5. The semiconductor device according to claim 1 , wherein the second insulator is a multilayer film comprising a metal oxide.

6. The semiconductor device according to claim 1 , comprising a fifth insulator on and in contact with the third insulator and the semiconductor.

7. The semiconductor device according to claim 6 , wherein the fifth insulator is a multilayer film comprising a metal oxide.

8. The semiconductor device according to claim 1 , comprising a sixth insulator on and in contact with the third insulator and the first conductor.

9. The semiconductor device according to claim 8 , wherein the sixth insulator is on and in contact with the semiconductor.

10. The semiconductor device according to claim 1 , wherein the semiconductor comprises indium, gallium, zinc, and oxygen.

11. The semiconductor device according to claim 1 , comprising an electron trap layer below the first insulator.

12. The semiconductor device according to claim 1 , wherein the amount of hydrogen released from the third insulator when converted into hydrogen molecules is less than or equal to 6×10 14 molecules/cm 2 in thermal desorption spectroscopy analysis at a surface temperature of a film of higher than or equal to 100° C. and lower than or equal to 500° C.

13. A semiconductor device comprising:
a first insulator comprising a first region and a second region thinner than the first region;
a second insulator on and in contact with the first region of the first insulator;
a third insulator on and in contact with the second region of the first insulator;
a semiconductor over the second insulator;
an interlayer insulator over the semiconductor, the interlayer insulator comprising an opening; and
a fourth insulator and a first conductor in the opening over the semiconductor,
wherein the first conductor and the semiconductor are overlapped with each other with the fourth insulator interposed therebetween, and
wherein the third insulator comprises fluorine,
wherein the amount of hydrogen released from the third insulator when converted into hydrogen molecules is less than or equal to 6×10 14 molecules/cm 2 in thermal desorption spectroscopy analysis at a surface temperature of a film of higher than or equal to 100° C. and lower than or equal to 700° C., and
wherein the third insulator does not overlap with the semiconductor.

14. The semiconductor device according to claim 13 , comprising a fourth conductor below the first insulator and overlapping with the semiconductor with the first insulator interposed therebetween.

15. The semiconductor device according to claim 13 , wherein the semiconductor and the second region of the first insulator do not overlap with each other.

16. The semiconductor device according to claim 13 , comprising a second conductor and a third conductor each on and in contact with the semiconductor.

17. The semiconductor device according to claim 13 , wherein the second insulator is a multilayer film comprising a metal oxide.

18. The semiconductor device according to claim 13 , comprising a fifth insulator on and in contact with the third insulator and the semiconductor, in the opening.

19. The semiconductor device according to claim 18 , wherein the fifth insulator is a multilayer film comprising a metal oxide.

20. The semiconductor device according to claim 13 , wherein the interlayer insulator is on and in contact with the third insulator.

21. The semiconductor device according to claim 13 , wherein the semiconductor comprises indium, gallium, zinc, and oxygen.

22. The semiconductor device according to claim 13 , comprising an electron trap layer below the first insulator.

23. The semiconductor device according to claim 13 , wherein the amount of hydrogen released from the third insulator when converted into hydrogen molecules is less than or equal to 6×10 14 molecules/cm 2 in thermal desorption spectroscopy analysis at a surface temperature of a film of higher than or equal to 100° C. and lower than or equal to 500° C.

24. The semiconductor device according to claim 1 , wherein a top surface of the third insulator is below a top surface of the second insulator.

25. The semiconductor device according to claim 1 , wherein a top surface of the third insulator is aligned with a top surface of the first region of the first insulator.

26. The semiconductor device according to claim 1 , wherein a top surface of the third insulator is below a bottom surface of the second insulator.

27. The semiconductor device according to claim 1 , wherein a top surface of the third insulator is below a bottom surface of the semiconductor.

28. The semiconductor device according to claim 1 , wherein the third insulator has no direct contact with the semiconductor.

Assignees

• Semiconductor Energy Lab

Inventors

• Tezuka Sachiaki
• Tanaka Tetsuhiro
• Endo Toshiya
• Ichijo Mitsuhiro

Classifications

• H01L29/7869 Primary

  Electricity · mapped topic

• H01L27/1156

  Electricity · mapped topic

• H01L27/10873

  Electricity · mapped topic

• H01L29/66969

  Electricity · mapped topic

• H01L27/10805

  Electricity · mapped topic