Method for estimating a temperature of a transistor

Patent metadata

Field	Value
Publication number	US-10191021-B2
Application number	US-201514689326-A
Country	US
Kind code	B2
Filing date	Apr 17, 2015
Priority date	Feb 27, 2015
Publication date	Jan 29, 2019
Grant date	Jan 29, 2019

Abstract

A detector measures turn-off voltage change with respect to change in time between a collector and emitter of a transistor and peak voltage of the transistor at the collector. An electronic data processor determines intermediate parameters of turn-off current, the turn-on current and on-state voltage drop based on the turn-off voltage change and the peak voltage. The data processor determines the power or energy loss for one switching cycle of the transistor based on the turn-off current, the turn-on current and on-state voltage drop between the collector and emitter of the transistor. The data processor estimates an associated average die temperature for the transistor over the switching cycle.

First claim

The following is claimed:

1. A method for estimating junction temperature or die temperature of a transistor of an inverter system, the method comprising:
measuring, by a detector, turn-off change in voltage with respect to change in time between a collector and emitter of a transistor in a phase of an inverter;
measuring, by the detector, peak voltage of the transistor between the collector and the emitter, where the measuring of peak voltage of the transistor between the collector and the emitter is triggered by a drop in a voltage applied to a base or a gate of the transistor in an active state; and where upon the triggering the peak voltage of a transient spike in a collector voltage of the transistor is measured via a series of cascaded multimode diodes and a resistive voltage divider;
determining, by an electronic data processor, intermediate parameters of turn-off current, the turn-on current and on-state voltage drop based on the turn-off voltage change and the peak voltage;
determining, by the data processor, the power loss or energy loss for one switching cycle of the transistor based on the turn-off current, the turn-on current and on-state voltage drop between the collector and emitter of the transistor; and
estimating, by the data processor, an associated average junction or die temperature for the transistor over the switching cycle based on the determined energy loss, observed inverter system temperature and thermal characteristic of the inverter system, where an inverter system temperature sensor measures a coolant temperature in a coolant system for cooling the inverter or a housing temperature of an inverter housing.

2. The method for estimating junction temperature according to claim 1 wherein the determining intermediate parameters further comprises:
estimating the junction or die temperature during turn-off of the transistor based on the measured turn-off change in voltage;
determining turn-off time based on the turn-off change in voltage with respect to change in time and based on the estimated junction temperature during turn-off;
determining turn-off current based on the turn-off time and the peak voltage; and
determining turn-on current based on the turn-off current, inverter parameters, motor parameters, and motor voltage.

3. The method according to claim 1 wherein the measuring of the turn-off change in voltage or voltage rise with respect to change in time is triggered by a drop in a voltage applied to a base or a gate of the transistor in an active state; and upon the triggering a transient spike of voltage rise with respect to time in a collector voltage of the transistor is measured via a series of cascaded multimode diodes and a resistive voltage divider.

4. The method according to claim 1 wherein the inverter system temperature comprises the coolant temperature and wherein the thermal characteristic comprises a thermal resistance associated with the inverter system.

5. The method according to claim 1 wherein the inverter system temperature comprises the housing temperature of an inverter housing and wherein the thermal characteristic comprises a thermal resistance associated with the inverter system.

6. The method according to claim 1 wherein the determining of the intermediate parameters further comprises:
sampling or measuring voltage between a collector and emitter of the transistor at a capacitor coupled to the collector via a resistor and a diode; and
providing the sampled or measured voltages to the data processor via one or more data ports to facilitate estimation of an on-state power loss of the transistor.

7. The method according to claim 6 further comprising:
sampling or measuring a voltage at a base or gate of the transistor to facilitate estimation of an on-state power loss of the transistor.

8. The method according to claim 1 further comprising:
measuring an observed mirror current of a transistor to cross check or verify a correctness and accuracy of the determined transistor turn-off current and the determined transistor turn-on current by cross-correlation between respective mirror currents and corresponding determined turn-on and turn-off currents or by a degree of deviation from an proportionality constant.

9. The method according to claim 1 further comprising:
counting a number of power cycles of the transistor;
determining a cumulative change in temperature for the transistor for the power cycles;
predicting a remaining life or longevity of the transistor or an associated inverter based on the counted number of power cycles and the determined cumulative change in the temperature.

10. A method for estimating junction temperature or die temperature of a transistor of an inverter system, the method comprising:
measuring, by a detector, a turn-off change in voltage (dv ce /dt) with respect to change in time between a collector and emitter of a transistor in a phase of an inverter;
measuring, by the detector, a peak voltage (v cepeak ) of the transistor between the collector and the emitter, where the measuring of the peak voltage (v cepeak ) of the transistor is triggered by a drop in v ge , or a voltage applied to a base or a gate of the transistor in an active state; and upon the triggering the peak voltage of a transient spike in a collector voltage of the transistor is measured via a series of cascaded multimode diodes and a resistive voltage divider;
determining, by an electronic data processor, intermediate parameters of turn-off current (i ceturnoff ), the turn-on current (i ceturnon ) and on-state voltage drop (v ceon ) based on the turn-off voltage change (dv ce /dt) and the peak voltage (v cepeak );
determining, by the data processor, the power or energy loss for one switching cycle of the transistor based on the turn-off current (i ceturnoff ), the turn on current (i ceturnon ) and on-state voltage drop (v ceon ) between the collector and emitter of the transistor; and
estimating, by the data processor, an associated average junction or die temperature for the transistor over the switching cycle based on the determined energy loss, observed inverter system temperature and thermal characteristic of the inverter system, where an inverter system temperature sensor measures a coolant temperature in a coolant system for cooling the inverter or a housing temperature of an inverter housing.

11. The method for estimating junction temperature according to claim 10 wherein the determining intermediate parameters further comprises:
estimating the junction or die temperature during turn-off (T joff ) of the transistor based on the measured turn-off change in voltage(dv ce /dt);
determining turn-off time (t off ) based on the turn-off change in voltage with respect to change in time (dv ce /dt) and based on the estimated junction temperature during turn-off (t joff );
determining turn-off current (i ceturnoff ) based on the turn-off time (t off ) and the peak voltage (v cepeak ); and
determining turn-on current (i ceturnon ) based on the turn-off current (i centurnoff ), inverter parameters, motor parameters, and motor voltage.

12. The method according to claim 10 wherein the measuring of the turn-off change in voltage or voltage rise with respect to change in time (dv ce /dt) is triggered by a drop in v ge or a voltage applied to a base or a gate of the transistor in an active state; and upon the triggering a transient spike of voltage rise with respect to time in a collector voltage of the transistor is measured via a series of cascaded multimode diodes and a resistive voltage divider.

13. A method for estimating junction temperature or die temperature of a field effect tran

Assignees

• Deere & Co

Inventors

• Singh Brij N

Classifications

• G01N33/00 Primary

  Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00 · CPC title

• G01K13/00

  Thermometers specially adapted for specific purposes · CPC title

• H03K17/68

  specially adapted for switching AC currents or voltages · CPC title

• G01K7/01 Primary

  using semiconducting elements having PN junctions (G01K7/02, G01K7/16, G01K7/30 take precedence) · CPC title

• G01R19/04

  Measuring peak values {or amplitude or envelope} of AC or of pulses · CPC title