Method of alloying reactive components

Patent metadata

Field	Value
Publication number	US-10190199-B2
Application number	US-201615155696-A
Country	US
Kind code	B2
Filing date	May 16, 2016
Priority date	Dec 1, 2006
Publication date	Jan 29, 2019
Grant date	Jan 29, 2019

Abstract

Metal ingots for forming single-crystal shape-memory alloys (SMAs) may be fabricated with high reliability and control by alloying thin layers of material together. In this improved method, a reactive layer (e.g., aluminum) is provided in thin flat layers between layers of other materials (e.g., copper and layers of nickel). When the stacked layers are vacuum heated in a crucible to the melting temperature of the reactive layer, it becomes reactive and chemically bonds to the other layers, and may form eutectics that, as the temperature is further increased, melt homogeneously and congruently at temperatures below the melting temperatures of copper and nickel. Oxidation and evaporation are greatly reduced compared to other methods of alloying, and loss of material from turbulence is minimized.

First claim

What is claimed is:

1. A method of making a hyperelastic single-crystal CuAlNi shape memory alloy, the method comprising:
forming a melt of CuAlNi by layering a layer of aluminum adjacent to a layer of copper and a layer of nickel, and-melting the layers together;
placing a seed of a desired composition for the shape memory alloy into the melt;
drawing the seed from the melt at a controlled rate so that a solid crystal is formed at a crystallization front; and
rapidly quenching the drawn crystal to produce a single crystal beta phase.

2. The method of claim 1 , wherein the rapid quenching is in salt water from 850° C.

3. The method of claim 1 , further comprising reacting the layers before melting.

4. The method of claim 1 , wherein the melting includes the layer of aluminum beginning to melt prior to the melting of the layers of copper and nickel.

5. The method of claim 1 , wherein the drawn crystal is heated to a beta phase temperature of 850-1000° C. and the rapid quenching is from the beta phase temperature.

6. The method of claim 1 , wherein the melting includes forming a homogeneous mixture of the alloy.

7. A method of making a hyperelastic single-crystal CuAlNi shape memory alloy, the method comprising:
forming a melt of CuAlNi by:
layering a plurality of layers of aluminum with one or more layers of copper and one or more layers of nickel, in an alternating pattern so that each layer of copper and each layer of nickel is sandwiched between two layers of aluminum;
reacting the layers; and
melting the reacted layers, wherein the plurality of aluminum layers begin to melt prior to the melting of the one or more layers of copper and nickel;

placing a seed of a desired composition for the shape memory alloy into the melt;
drawing the seed from the melt at a controlled rate so that a solid crystal is formed at a crystallization front;
heating the drawn crystal at a beta phase temperature of 850-1000° C.; and
rapidly quenching the drawn crystal from the beta phase temperature to produce a single crystal beta phase shape memory alloy.

8. The method of claim 7 , wherein the rapid quenching is in salt water.

9. The method of claim 7 , wherein the melting includes forming a homogeneous mixture of the alloy.

10. A method of making a hyperelastic single-crystal shape memory alloy, the method comprising:
forming an alloy melt by layering dissimilar materials in an alternating pattern to provide large areas of contact between the dissimilar materials, and-melting the layers of dissimilar materials;
placing a seed of a desired composition for the shape memory alloy into the alloy melt;
drawing the seed from the alloy melt at a controlled rate so that a solid crystal is formed at a crystallization front.

11. The method of claim 10 , wherein the layering of dissimilar materials comprises layering a layer of aluminum adjacent to a layer of copper and a layer of nickel whereby the alloy melt is CuAlNi and wherein the seed is CuAlNi.

12. The method of claim 11 , wherein the melting includes the layer of aluminum beginning to melt prior to the melting of the layers of copper and nickel.

13. The method of claim 10 , further comprising:
reheating and rapidly quenching the drawn crystal to produce a single crystal beta phase.

14. The method of claim 13 , wherein the rapid quenching is in salt water.

15. The method of claim 13 , wherein reheating the drawn crystal is to a beta phase temperature of 850-1000° C. and the rapid quenching is from the beta phase temperature.

16. The method of claim 10 , further comprising reacting the layers before melting.

17. The method of claim 10 , further comprising, after melting, and prior to placing the seed:
cooling the melt to form an ingot; and
heating the ingot to form another melt of the alloy into which the seed is placed.

18. The method of claim 10 , wherein the melting includes forming a homogeneous mixture of the alloy.

Assignees

• Ormco Corp

Inventors

• Johnson Alfred David
• Bachmann Walter A

Classifications

• B22D7/005

  from non-ferrous metals · CPC title

• C30B15/00

  Single-crystal growth by pulling from a melt, e.g. Czochralski method (under a protective fluid C30B27/00) · CPC title

• C22F1/04

  of aluminium or alloys based thereon · CPC title

• C22F1/057

  of alloys with copper as the next major constituent · CPC title

• C22F1/08

  of copper or alloys based thereon · CPC title