Doped nickel oxide interfacial layer

Patent metadata

Field	Value
Publication number	US-10189998-B2
Application number	US-201715443582-A
Country	US
Kind code	B2
Filing date	Feb 27, 2017
Priority date	Nov 26, 2013
Publication date	Jan 29, 2019
Grant date	Jan 29, 2019

Abstract

Photovoltaic devices such as solar cells, hybrid solar cell-batteries, and other such devices may include an active layer disposed between two electrodes. The active layer may have perovskite material and other material such as mesoporous material, interfacial layers, thin-coat interfacial layers, and combinations thereof. The perovskite material may be photoactive. The perovskite material may be disposed between two or more other materials in the photovoltaic device. Inclusion of these materials in various arrangements within an active layer of a photovoltaic device may improve device performance. Other materials may be included to further improve device performance, such as, for example: additional perovskites, and additional interfacial layers.

First claim

What is claimed is:

1. A photovoltaic device comprising:
a first electrode;
a second electrode; and
an active layer disposed at least partially between the first and second electrodes, the active layer comprising: an NiO interfacial layer doped with copper that is adjacent to and in contact with a perovskite material photoactive layer.

2. The photovoltaic device of claim 1 , wherein the perovskite material has the formula CMX 3 and the perovskite material photoactive layer is disposed adjacent to and in contact with the doped NiO interfacial layer;
wherein C comprises one or more cations each selected from the group consisting of Group 1 metals, Group 2 metals, organic cations, and combinations thereof;
wherein M comprises one or more metals each selected from the group consisting of Fe, Co, Ni, Cu, Sn, Pb, Bi, Ge, Ti, Zn, and combinations thereof; and
wherein X comprises one or more anions each selected from the group consisting of halides, sulfide, selenide, and combinations thereof.

3. The photovoltaic device of claim 2 , wherein C is methylammonium, M is Pb, and wherein X comprises one or more halides.

4. The photovoltaic device of claim 2 , wherein C is methylammonium, M is Sn, and wherein X comprises one or more halides.

5. The photovoltaic device of claim 2 , wherein C is a formamidinium, M is Pb, and wherein X comprises one or more halides.

6. The photovoltaic device of claim 2 , wherein C is formamidinium, M is Sn, and wherein X comprises one or more halides.

7. The photovoltaic device of claim 1 , wherein the doped NiO interfacial layer comprises NiO and a dopant having a concentration between 1 ppb to 50 mol %.

8. The photovoltaic device of claim 1 , wherein the doped NiO interfacial layer is proximate to the first electrode, and the first electrode is an anode.

9. The photovoltaic device of claim 1 , wherein the doped NiO interfacial layer is proximate to the first electrode, and the first electrode is a cathode.

10. A photovoltaic device comprising:
a first electrode;
a second electrode; and
an active layer disposed at least partially between the first and second electrodes, the active layer comprising: an NiO interfacial layer doped with copper and a perovskite material photoactive layer, wherein the perovskite material has the formula CMX 3 and the perovskite material photoactive layer is disposed adjacent to and in contact with the doped NiO interfacial layer;
wherein C comprises one or more cations each selected from the group consisting of Group 1 metals, Group 2 metals, organic cations, and combinations thereof;
wherein M comprises one or more metals each selected from the group consisting of Fe, Co, Ni, Cu, Sn, Pb, Bi, Ge, Ti, Zn, and combinations thereof; and
wherein X comprises one or more anions each selected from the group consisting of halides, sulfide, selenide, and combinations thereof.

11. The photovoltaic device of claim 10 , wherein C is methylammonium, M is Pb, and wherein X comprises one or more halides.

12. The photovoltaic device of claim 10 , wherein C is methylammonium, M is Sn, and wherein X comprises one or more halides.

13. The photovoltaic device of claim 10 , wherein C is a formamidinium, M is Pb, and wherein X comprises one or more halides.

14. The photovoltaic device of claim 10 , wherein C is a formamidinium, M is Sn, and wherein X comprises one or more halides.

15. The photovoltaic device of claim 10 , wherein the doped NiO interfacial layer comprises NiO and a dopant having a concentration between 1 ppb to 50 mol %.

16. The photovoltaic device of claim 10 , wherein:
the doped NiO interfacial layer is closer to the first electrode than is the perovskite material layer; and
the first electrode is an anode and the second electrode is a cathode.

17. The photovoltaic device of claim 10 , wherein:
the doped NiO interfacial layer is closer to the first electrode than is the perovskite material layer; and
the first electrode is a cathode and the second electrode is an anode.

Assignees

• Hunt Energy Entpr Llc
• Hunt Energy Entpr Llc

Inventors

• Irwin Michael D
• Dhas Vivek V
• Mielczarek Kamil

Classifications

• Y02E10/542

  Dye sensitized solar cells · CPC title

• H01L51/424

  Electricity · mapped topic

• H01L31/032

  Electricity · mapped topic

• H01L51/42

  Electricity · mapped topic

• H01G9/204

  comprising zinc oxides, e.g. ZnO (H01G9/2036 takes precedence) · CPC title