Method for the deposition of an organic material
US-2015123090-A1 · May 7, 2015 · US
N-fluoroalkyl-substituted dibromonaphthalene diimides and their use as semiconductor
US10186664B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10186664-B2 |
| Application number | US-201515318566-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 16, 2015 |
| Priority date | Jun 17, 2014 |
| Publication date | Jan 22, 2019 |
| Grant date | Jan 22, 2019 |
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Abstract
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The present invention relates to compounds of the formula (I) where R 1 and R 2 independently of each other, are selected from 1H,1H—C 2 -C 10 -perfluoroalkyl and 1H,1H,2H,2H—C 3 -C 10 -perfluoroalkyl, except for the compound of formula (I), where R 1 and R 2 are both 1H,1H-perfluorobutyl, and to their use, especially as an n-type semiconductor.
First claim
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The invention claimed is: 1. A compound of formula I where R 1 and R 2 , independently of each other, are 2,2,2-trifluoroethyl or 2,2,3,3,3-pentafluoropropyl. 2. The compound according to claim 1 , wherein R 1 and R 2 are the same. 3. The compound according to claim 1 , is 2,6-dibromo-N,N-bis(2,2,2-trifluoroethyl)-naphthalene[1,8:4,5]bis(dicarboximide); or 2,6-dibromo-N,N-bis(1H,1H-pentafluoropropyl)-naphthalene-[1,8:4,5]bis(dicarboximide). 4. A semiconductor, comprising the compound according to claim 1 . 5. A thin film semiconductor, comprising the compound according to claim 1 . 6. An organic field effect transistor, comprising a substrate comprising at least one gate structure, a source electrode and a drain electrode, and at least one compound according to claim 1 as a semiconductor material. 7. The organic field effect transistor according to claim 6 , having a top-gate bottom-contact configuration. 8. The organic field effect transistor according to claim 6 , having a bottom-gate bottom-contact configuration. 9. A substrate, comprising a plurality of organic field-effect transistors, wherein at least some of the field-effect transistors comprising at least one compound according to claim 1 . 10. A semiconductor unit, comprising at least one substrate according to claim 9 . 11. An organic solar cell, comprising at least one compound according to claim 1 . 12. A semiconductor, comprising the compound according to claim 3 . 13. A thin film semiconductor, comprising the compound according to claim 3 . 14. An organic field effect transistor, comprising a substrate comprising at least one gate structure, a source electrode and a drain electrode, and at least one compound according to claim 3 as a semiconductor material. 15. A substrate, comprising a plurality of organic field-effect transistors, wherein at least some of the field-effect transistors comprising at least one compound according to claim 3 . 16. An organic solar cell, comprising at least one compound according to claim 3 .
Assignees
Inventors
Classifications
Organic PV cells · CPC title
Naphthalimide dyes; Phthalimide dyes · CPC title
Electricity · mapped topic
- H01L51/0053Primary
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US10186664B2 cover?
- The present invention relates to compounds of the formula (I) where R 1 and R 2 independently of each other, are selected from 1H,1H—C 2 -C 10 -perfluoroalkyl and 1H,1H,2H,2H—C 3 -C 10 -perfluoroalkyl, except for the compound of formula (I), where R 1 and R 2 are both 1H,1H-perfluorobutyl, and to their use, especially as an n-type semiconductor.
- Who is the assignee on this patent?
- Basf Se
- What technology area does this patent fall under?
- Primary CPC classification H01L51/0053. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jan 22 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).