Radiation detector

Patent metadata

Field	Value
Publication number	US-10186555-B2
Application number	US-201715686299-A
Country	US
Kind code	B2
Filing date	Aug 25, 2017
Priority date	Mar 21, 2017
Publication date	Jan 22, 2019
Grant date	Jan 22, 2019

Abstract

According to one embodiment, a radiation detector includes a first conductive layer, a second conductive layer, and an intermediate layer. The intermediate layer is provided between the first and second conductive layers. The intermediate layer includes an organic semiconductor region and a plurality of particles. The organic semiconductor region includes a portion provided around the particles. The organic semiconductor region includes first and second semiconductor regions. The first semiconductor region has a first highest occupied molecular orbital and a first lowest unoccupied molecular orbital. The second semiconductor region has a second highest occupied molecular orbital and a second lowest unoccupied molecular orbital. The particles have a third highest occupied molecular orbital and a third lowest unoccupied molecular orbital. The first highest occupied molecular orbital is lower than the third highest occupied molecular orbital. The second lowest unoccupied molecular orbital is higher than the third lowest unoccupied molecular orbital.

First claim

What is claimed is:

1. A radiation detector, comprising:
a first conductive layer;
a second conductive layer; and
an intermediate layer provided between the first conductive layer and the second conductive layer, the intermediate layer including an organic semiconductor region and a plurality of particles, the organic semiconductor region including a portion provided around the particles, the organic semiconductor region including a first semiconductor region and a second semiconductor region, the first semiconductor region having a first highest occupied molecular orbital and a first lowest unoccupied molecular orbital, the second semiconductor region having a second highest occupied molecular orbital and a second lowest unoccupied molecular orbital, the particles having a third highest occupied molecular orbital and a third lowest unoccupied molecular orbital, the first highest occupied molecular orbital being lower than the third highest occupied molecular orbital, the second lowest unoccupied molecular orbital being higher than the third lowest unoccupied molecular orbital, the absolute value of a difference between the third highest occupied molecular orbital and the third lowest unoccupied molecular orbital being less than the absolute value of a difference between the second highest occupied molecular orbital and the third lowest unoccupied molecular orbital and less than the absolute value of a difference between the third highest occupied molecular orbital and the first lowest unoccupied molecular orbital,
wherein
the first lowest unoccupied molecular orbital is higher than the third lowest unoccupied molecular orbital, and
the second highest occupied molecular orbital is lower than the third highest occupied molecular orbital.

2. The detector according to claim 1 , wherein the absolute value of a difference between the first lowest unoccupied molecular orbital and the third lowest unoccupied molecular orbital is less than the absolute value of a difference between the second lowest unoccupied molecular orbital and the third lowest unoccupied molecular orbital.

3. The detector according to claim 1 , wherein the absolute value of a difference between the second highest occupied molecular orbital and the third highest occupied molecular orbital is less than the absolute value of a difference between the first highest occupied molecular orbital and the third highest occupied molecular orbital.

4. A radiation detector, comprising:
a first conductive layer;
a second conductive layer; and
an intermediate layer provided between the first conductive layer and the second conductive layer, the intermediate layer including an organic semiconductor region and a plurality of particles, the organic semiconductor region including a portion provided around the particles, the organic semiconductor region including a first semiconductor region and a second semiconductor region, the first semiconductor region having a first highest occupied molecular orbital and a first lowest unoccupied molecular orbital, the second semiconductor region having a second highest occupied molecular orbital and a second lowest unoccupied molecular orbital, the particles having a third highest occupied molecular orbital and a third lowest unoccupied molecular orbital, the first highest occupied molecular orbital being lower than the third highest occupied molecular orbital, the second lowest unoccupied molecular orbital being higher than the third lowest unoccupied molecular orbital, the absolute value of a difference between the third highest occupied molecular orbital and the third lowest unoccupied molecular orbital being less than the absolute value of a difference between the second highest occupied molecular orbital and the third lowest unoccupied molecular orbital and less than the absolute value of a difference between the third highest occupied molecular orbital and the first lowest unoccupied molecular orbital,
wherein the plurality of particles includes at least one selected from the group consisting of PbS, PbSe, Bi 2 O 3 , and Bi 2 S 3 .

5. The detector according to claim 1 , wherein a diameter of at least a portion of the plurality of particles is not less than 1 nanometer and not more than 100 nanometers.

6. The detector according to claim 1 , wherein
a thickness of the intermediate layer along a first direction is not less than 1 micrometer and not more than 1000 micrometers, and
the first direction is from the second conductive layer toward the first conductive layer.

7. A radiation detector, comprising:
a first conductive layer;
a second conductive layer;
an intermediate layer provided between the first conductive layer and the second conductive layer, the intermediate layer including an organic semiconductor region and a plurality of particles, the organic semiconductor region including a portion provided around the particles, the organic semiconductor region including a first semiconductor region and a second semiconductor region, the first semiconductor region having a first highest occupied molecular orbital and a first lowest unoccupied molecular orbital, the second semiconductor region having a second highest occupied molecular orbital and a second lowest unoccupied molecular orbital, the particles having a third highest occupied molecular orbital and a third lowest unoccupied molecular orbital, the first highest occupied molecular orbital being lower than the third highest occupied molecular orbital, the second lowest unoccupied molecular orbital being higher than the third lowest unoccupied molecular orbital, the absolute value of a difference between the third highest occupied molecular orbital and the third lowest unoccupied molecular orbital being less than the absolute value of a difference between the second highest occupied molecular orbital and the third lowest unoccupied molecular orbital and less than the absolute value of a difference between the third highest occupied molecular orbital and the first lowest unoccupied molecular orbital; and
a detection circuit electrically connected to the first conductive layer and the second conductive layer,
the detection circuit outputting a signal corresponding to an intensity of radiation incident on a stacked body,
the stacked body including the first conductive layer, the second conductive layer, and the intermediate layer.

8. The detector according to claim 7 , wherein the radiation includes β-rays.

Assignees

• Toshiba Kk

Inventors

• Takasu Isao
• Taguchi Satomi
• Wada Atsushi
• Kobayashi Mitsuyoshi

Classifications

• G01T1/24 Primary

  with semiconductor detectors · CPC title

• H01L27/308 Primary

  Electricity · mapped topic

• H10K50/11

  characterised by the electroluminescent [EL] layers · CPC title

• H10K2101/40

  Interrelation of parameters between multiple constituent active layers or sublayers, e.g. HOMO values in adjacent layers · CPC title

• H10K39/36 Primary

  Devices specially adapted for detecting X-ray radiation · CPC title