Semiconductor device including transistor device

Patent metadata

Field	Value
Publication number	US-10186508-B2
Application number	US-201715792492-A
Country	US
Kind code	B2
Filing date	Oct 24, 2017
Priority date	Oct 25, 2016
Publication date	Jan 22, 2019
Grant date	Jan 22, 2019

Abstract

A semiconductor device of an embodiment includes a transistor device in a semiconductor die including a semiconductor body. The transistor device includes transistor cells connected in parallel and covering at least 80% of an overall active area at a first surface of the semiconductor body. The semiconductor device further includes a control terminal contact area at the first surface electrically connected to a control electrode of each of the transistor cells. A first load terminal contact area at the first surface electrically connected to a first load terminal region of each of the transistor cells. The semiconductor device further includes a resistor in the semiconductor die and electrically coupled between the control terminal contact area and the first load terminal contact area.

First claim

What is claimed is:

1. A semiconductor device, comprising:
a transistor device in a semiconductor die including a semiconductor body, the transistor device comprising transistor cells connected in parallel and covering at least 80% of an overall active area at a first surface of the semiconductor body;
a control terminal contact area at the first surface electrically connected to a control electrode of each of the transistor cells;
a first load terminal contact area at the first surface electrically connected to a first load terminal region of each of the transistor cells; and
a resistor in the semiconductor die and electrically coupled between the control terminal contact area and the first load terminal contact area, wherein a current path from the control terminal contact area via the resistor to the first load terminal contact area is configured to discharge a gate of the transistor device at a failure mode of interruption of gate voltage supply,
wherein the resistor laterally extends below the control terminal contact area or below a control terminal interconnection line,
wherein the resistor is electrically connected to the control terminal contact area or the control terminal interconnection line via a contact,
wherein an electrical resistance of the resistor is set by a position of the contact along a lateral extension of the resistor below the control terminal contact area or below the control terminal interconnection line.

2. The semiconductor device of claim 1 , wherein the semiconductor body includes the transistor device as single transistor device.

3. The semiconductor device of claim 1 , further comprising a single metal wiring level, the control terminal contact area and the first load terminal contact area being different parts of the single metal wiring level.

4. The semiconductor device of claim 1 , wherein the semiconductor device is a three-terminal device, the three terminals being first and second load terminals and a control terminal of the transistor device.

5. The semiconductor device of claim 1 , wherein the semiconductor device is a five-terminal device, the five terminals being first and second load terminals, first and second sense terminals and a control terminal of the transistor device.

6. The semiconductor device of claim 1 , further comprising a pn junction diode, wherein the pn junction diode and the resistor are electrically connected in series between the control terminal contact area and the first load terminal contact area.

7. The semiconductor device of claim 6 , wherein the transistor device is an n-type channel IGFET and an anode of the pn junction diode is electrically coupled to the control terminal electrode.

8. The semiconductor device of claim 6 , wherein the pn junction diode is a polycrystalline silicon pn junction diode.

9. The semiconductor device of claim 8 , wherein the resistor and the pn junction diode constitute different parts of a single polycrystalline silicon wiring level, the polycrystalline silicon wiring level including parts of different conductivity type.

10. The semiconductor device of claim 6 , wherein a forward voltage VF of the diode structure at a forward current in a range of 1 mA and 10 mA is smaller than a threshold voltage of the transistor device at the same current level.

11. The semiconductor device of claim 6 , wherein the pn junction diode includes is a chain of pn junction sub-diodes electrically connected in series.

12. The semiconductor device of claim 1 , wherein the resistor is a polycrystalline silicon resistor.

13. The semiconductor device of claim 1 , wherein an electrical resistance of the resistor is in a range from 50 kOhm to 150 kOhm.

14. The semiconductor device of claim 1 , wherein the resistor is at least partly embedded in an intermediate dielectric sandwiched between a wiring level of the first load terminal contact area and the first surface.

15. The semiconductor device of claim 1 , wherein the resistor is at least partly arranged in a trench and electrically insulated from a surrounding part of the semiconductor body by a trench dielectric.

16. The semiconductor device of claim 1 , wherein the transistor device is a vertical transistor device and further includes an edge termination area surrounding the active area, and a second load terminal contact area at a second surface opposite to the first surface.

17. The semiconductor device of claim 1 , wherein the transistor device is a power transistor device of more than 1A rated maximum load current and a rated load terminal to load terminal breakdown voltage larger than 10V.

Assignees

• Infineon Technologies Ag

Inventors

• Ahlers Dirk
• Zundel Markus
• Brandl Peter
• Matoy Kurt
• Ostermann Thomas

Classifications

• H01L28/20

  Electricity · mapped topic

• H01L29/7803

  Electricity · mapped topic

• H01L29/8083

  Electricity · mapped topic

• H01L27/0255

  Electricity · mapped topic

• H01L27/0292 Primary

  Electricity · mapped topic