Semiconductor package with grounded fence to inhibit dendrites of die-attach materials

Patent metadata

Field	Value
Publication number	US-10186476-B2
Application number	US-201715605587-A
Country	US
Kind code	B2
Filing date	May 25, 2017
Priority date	Nov 7, 2016
Publication date	Jan 22, 2019
Grant date	Jan 22, 2019

Abstract

The present disclosure relates to a semiconductor package with at least one grounded fence to inhibit dendrites of die-attach materials. The semiconductor package includes a carrier, a die-attach material, and a wire-bonded die. The carrier includes a die pad and a negative carrier contact. The wire-bonded die includes a die body, a negative die contact, a grounded fence, and a bonding wire. A bottom surface of the die body is coupled to the die pad by the die-attach material. The negative die contact and the grounded fence reside over a top surface of the die body. The grounded fence, which has a same DC potential as the die pad, extends between the negative die contact and a periphery of the top surface of the die body. The bonding wire extends from the negative die contact to the negative carrier contact.

First claim

What is claimed is:

1. An apparatus comprising:
a carrier comprising a die pad, a non-negative carrier contact to receive non-negative voltages, and a first negative carrier contact to receive negative voltages, wherein the die pad is surrounded by the first negative carrier contact and the non-negative carrier contact;
a die-attach material;
a wire-bonded die comprising a die body that has a top surface and a bottom surface opposite the top surface of the die body, a non-negative die contact to receive the non-negative voltages, a first negative die contact to receive the negative voltages, a first grounded fence electronically coupled to ground, a first bonding wire, and a second bonding wire, wherein:
the bottom surface of the die body is coupled with a top surface of the die pad by the die-attach material;
the non-negative die contact, the first negative die contact, and the first grounded fence reside over the top surface of the die body;
the first grounded fence, which has a same DC potential as the die pad, extends between the first negative die contact and a periphery of the top surface of the die body, and does not extend between the non-negative die contact and the periphery of the top surface of the die body;
the first bonding wire extends from the first negative die contact to the first negative carrier contact, and
the second bonding wire extends from the non-negative die contact to the non-negative carrier contact.

2. The apparatus of claim 1 wherein the die-attach material is a dendrite forming metal.

3. The apparatus of claim 2 wherein the die-attach material is formed of sintered silver or tin.

4. The apparatus of claim 1 wherein a first distance between the first negative die contact and the periphery of the top surface of the die body is longer than a second distance between the non-negative die contact and the periphery of the top surface of the die body.

5. The apparatus of claim 2 wherein the first grounded fence is electronically coupled to the die pad by a via structure through the die body and the die-attach material.

6. The apparatus of claim 2 wherein the wire-bonded die is formed by one of a group consisting of Gallium nitride (GaN) technology, Gallium arsenide (GaAs) technology, Indium phosphide (InP) technology, Silicon (Si) technology, Silicon carbide (SiC) technology, and diamond technology.

7. The apparatus of claim 2 wherein the first grounded fence is formed from metal strips.

8. The apparatus of claim 2 wherein the wire-bonded die further comprises a second negative die contact that receives the negative voltages, resides over the top surface of the die body, and is adjacent to the first negative die contact, wherein the first grounded fence is continuous and extends between the second negative die contact and the periphery of the top surface of the die body.

9. The apparatus of claim 2 wherein the carrier is a lead frame such that the non-negative carrier contact and the first negative carrier contact are metal leads and the die pad is a metal pad.

10. The apparatus of claim 9 further comprising an enclosure that is coupled to the non-negative carrier contact and the first negative carrier contact, and forms a cavity over the carrier, wherein:
the wire-bonded die is disposed within the cavity; and
the first bonding wire and the second bonding wire are exposed to a gaseous environment within the cavity.

11. An apparatus comprising:
a carrier comprising a die pad, a first negative carrier contact, and a second negative carrier contact, wherein the first negative carrier contact and the second negative carrier contact receive negative voltages;
a die-attach material;
a wire-bonded die comprising a die body that has a top surface and a bottom surface opposite the top surface of the die body, a non-negative die contact to receive non-negative voltages, a first negative die contact and a second negative die contact to receive the negative voltages, a first grounded fence electronically coupled to ground, a first bonding wire, and a second bonding wire, wherein:
the first negative die contact and the second negative die contact receive the negative voltages;
the bottom surface of the die body is coupled with a top surface of the die pad by the die-attach material;
the first negative die contact, the second negative die contact, and the first grounded fence reside over the top surface of the die body;
the first negative die contact is adjacent to the second negative die contact; the first grounded fence, which has a same DC potential as the die pad, is continuous, and extends between the first negative die contact and a periphery of the top surface of the die body, and between the second negative die contact and the periphery of the top surface of the die body;
the first bonding wire extends from the first negative die contact to the first negative carrier contact, and
the second bonding wire extends from the second negative die contact to the second negative carrier contact.

12. The apparatus of claim 11 wherein the die-attach material is a dendrite forming metal.

13. The apparatus of claim 12 wherein the die-attach material is formed of sintered silver or tin.

14. The apparatus of claim 12 wherein the first grounded fence is electronically coupled to the die pad by a via structure through the die body and the die-attach material.

15. The apparatus of claim 12 wherein the wire-bonded die is formed by one of a group consisting of Gallium nitride (GaN) technology, Gallium arsenide (GaAs) technology, Indium phosphide (InP) technology, Silicon (Si) technology, Silicon carbide (SiC) technology, and diamond technology.

16. The apparatus of claim 12 wherein the first grounded fence is formed from metal strips.

17. The apparatus of claim 12 wherein the carrier is a lead frame such that the first negative carrier contact and the second negative carrier contact are metal leads and the die pad is a metal pad.

18. The apparatus of claim 14 further comprising an enclosure that is coupled to the first negative carrier contact and the second negative carrier contact, and forms a cavity over the carrier, wherein:
the wire-bonded die is disposed within the cavity; and
the first bonding wire and the second bonding wire are exposed to a gaseous environment within the cavity.

19. The apparatus of claim 1 wherein the first grounded fence further extends between the first negative die contact and the non-negative die contact, such that the first negative die contact is at least partially encompassed by the first grounded fence.

20. The apparatus of claim 19 wherein the first grounded fence is a closed-loop and fully encompasses the first negative die contact.

21. The apparatus of claim 1 wherein the wire-bonded die further comprises a second negative die contact to receive the negative voltages and a second grounded fence electronically coupled to ground, wherein:
the second negative die contact resides over the top surface of the die body and is not adjacent to the first negative die contact;
the second grounded fence, which has a same DC potential as the die pad, resides over the top surface of the die body and extends between the second negative die contact and the periphery of the top surface of the die body; and
the second grounded fence is separate from the first grounded fence.

22. The apparatus of claim 21 wherein the second grounded fence does not extend between the non-negative die contact and the periphery of th

Assignees

• Qorvo Us Inc

Inventors

• Wall Larry
• Sanabria Christopher

Classifications

• H10W90/756

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W90/736

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W74/111

  the semiconductor body being completely enclosed · CPC title

• H10W74/00

  Encapsulations, e.g. protective coatings · CPC title

• H10W72/5449

  not being orthogonal to a side surface of the chip, e.g. fan-out arrangements · CPC title