Chemical liquid preparation method of preparing a chemical liquid for substrate processing, chemical liquid preparation unit preparing a chemical liquid for substrate processing, and substrate processing system

Patent metadata

Field	Value
Publication number	US-10186435-B2
Application number	US-201715630387-A
Country	US
Kind code	B2
Filing date	Jun 22, 2017
Priority date	May 15, 2012
Publication date	Jan 22, 2019
Grant date	Jan 22, 2019

Abstract

A substrate processing system includes a chemical liquid preparation unit preparing a chemical liquid to be supplied to a substrate and a processing unit which supplies the chemical liquid, prepared by the chemical liquid preparation unit, to the substrate. The chemical liquid preparation unit supplies an oxygen-containing gas, containing oxygen gas, to a TMAH-containing chemical liquid, containing TMAH (tetramethylammonium hydroxide), to make the oxygen-containing gas dissolve in the TMAH-containing chemical liquid.

First claim

What is claimed is:

1. A substrate processing method comprising:
a chemical liquid preparing step of stabilizing or increasing an etching rate of a TMAH-containing chemical liquid that contains TMAH (tetramethylammonium hydroxide) by causing an oxygen-containing gas that contains oxygen gas to dissolve in the TMAH-containing chemical liquid;
a chemical liquid guiding step of guiding the TMAH-containing chemical liquid prepared in the chemical liquid preparing step by a chemical liquid piping; and
a substrate etching step of etching a film formed on the substrate by causing a nozzle to discharge the TMAH-containing chemical liquid guided by the chemical liquid piping toward the substrate,
wherein the substrate etching step is a step of etching a polysilicon film formed on the substrate by causing the nozzle to discharge the TMAH-containing chemical liquid guided by the chemical liquid piping toward the substrate.

2. The substrate processing method according to claim 1 ;
wherein the chemical liquid preparing step includes an oxygen-containing gas guiding step of causing a gas piping to guide the oxygen-containing gas to a tank that stores the TMAH-containing chemical etching liquid.

3. A substrate processing method comprising:
a chemical liquid preparing step of stabilizing or increasing an etching rate of a TMAH-containing chemical liquid that contains TMAH (tetramethylammonium hydroxide) by causing an oxygen-containing gas that contains oxygen gas to dissolve in the TMAH-containing chemical liquid;
a chemical liquid guiding step of guiding the TMAH-containing chemical liquid prepared in the chemical liquid preparing step by a chemical liquid piping; and
a substrate etching step of etching a film formed on the substrate by causing a nozzle to discharge the TMAH-containing chemical liquid guided by the chemical liquid piping toward the substrate,
wherein the chemical liquid preparing step includes
a measurement step of measuring a dissolved oxygen concentration in the TMAH-containing chemical liquid;
a nitrogen dissolution step of supplying a nitrogen-containing gas containing nitrogen gas to the TMAH-containing chemical liquid to make the nitrogen-containing gas dissolve in the TMAH-containing chemical liquid when the dissolved oxygen concentration measured in the measurement step is higher than a predetermined concentration; and
an oxygen dissolution step of supplying the oxygen-containing gas to the TMAH-containing chemical liquid to make the oxygen-containing gas dissolve in the TMAH-containing chemical liquid when the dissolved oxygen concentration measured in the measurement step is lower than the predetermined concentration.

Assignees

• Screen Holdings Co Ltd

Inventors

• Miura Atsuyasu
• Ishikawa Hidekazu

Classifications

• H10P72/0604

  Process monitoring, e.g. flow or thickness monitoring · CPC title

• H10P72/0414

  using mainly spraying means, e.g. nozzles · CPC title

• H10P72/0402

  Apparatus for fluid treatment (H10P72/0441, H10P72/0448 take precedence) · CPC title

• H10P50/648

  Anisotropic liquid etching · CPC title

• H10P72/0424 Primary

  using mainly spraying means, e.g. nozzles · CPC title