Fast optical switch and its applications in optical communication

US10185202B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10185202-B2
Application numberUS-201815932404-A
CountryUS
Kind codeB2
Filing dateFeb 26, 2018
Priority dateAug 1, 2014
Publication dateJan 22, 2019
Grant dateJan 22, 2019

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  5. First independent claim

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Abstract

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A fast optical switch can be fabricated/constructed, when a vanadium dioxide (VO2) and a two-dimensional (2-D) material is activated by either an electrical pulse (a voltage pulse or a current pulse) or a light pulse just to induce an insulator-to-metal phase transition (IMT) in vanadium dioxide. The applications of such a fast optical switch for an on-demand optical add-drop subsystem, integrating with (a) a light slowing/light stopping component (based on metamaterials and/or nanoplasmonic structures) and (b) with or without a wavelength converter are also described.

First claim

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We claim: 1. An optical switch comprising: a first optical waveguide and a second optical waveguide, wherein the first optical waveguide or the second optical waveguide comprises: a light slowing component or a light stopping component, wherein the light slowing component or the light stopping component comprises: metamaterials of negative refractive index or nanostructures, wherein the first optical waveguide is less than 5 microns in width, wherein the second optical waveguide is less than 5 microns in width, wherein a section of the first optical waveguide is substantially parallel within manufacturing tolerance to a section of the second optical waveguide, wherein the section of the first optical waveguide is optically coupled with an ultra thin-film of thickness less than 0.15 microns, wherein the section of the second optical waveguide is optically coupled with an ultra thin-film of thickness less than 0.15 microns, wherein the ultra thin-film comprises: vanadium dioxide, wherein the ultra thin-film is electrically coupled with two metal electrodes, wherein the ultra thin-film is receiving a voltage pulse or a current pulse via the two metal electrodes, just to induce insulator-to-metal (IMT) phase transition in vanadium dioxide. 2. The optical switch according to claim 1 , further comprising a directionally coupled optical waveguides configuration or a multimode interference (MMI) coupler configuration or a Mach-Zehnder (MZ) configuration. 3. The optical switch according to claim 1 , further comprising coupling with a wavelength multiplexer or a wavelength demultiplexer. 4. The optical switch according to claim 1 , further comprising coupling with a wavelength tunable multiplexer or a wavelength tunable demultiplexer. 5. The optical switch according to claim 1 , further comprising coupling with a wavelength tunable photonic crystal multiplexer or a wavelength tunable photonic crystal demultiplexer. 6. The optical switch according to claim 1 , further comprising coupling with a wavelength converter. 7. The optical switch according to claim 6 , comprising the wavelength converter, wherein the wavelength converter comprises As 2 S 3 chalcogenide material or two-dimensional (2-D) photonic crystals As 2 S 3 chalcogenide material or graphene on two-dimensional (2-D) photonic crystals of a silicon waveguide. 8. The optical switch according to claim 6 , further comprising the wavelength converter, wherein the wavelength converter comprises a semiconductor optical amplifier or a quantum dot based semiconductor optical amplifier. 9. An optical switch comprising: a first optical waveguide and a second optical waveguide, wherein the first optical waveguide or the second optical waveguide comprises: a light slowing component or a light stopping component, wherein the light slowing component or the light stopping component comprises: metamaterials of negative refractive index or nanostructures, wherein the first optical waveguide is less than 5 microns in width, wherein the second optical waveguide is less than 5 microns in width, wherein a section of the first optical waveguide is substantially parallel within manufacturing tolerance to a section of the second optical waveguide, wherein the section of the first optical waveguide is optically coupled with an ultra thin-film of thickness less than 0.15 microns, wherein the section of the second optical waveguide is optically coupled with an ultra thin-film of thickness less than 0.15 microns, wherein the ultra thin-film comprises: vanadium dioxide, wherein the ultra thin-film is receiving a light pulse, just to induce insulator-to-metal (IMT) phase transition in vanadium dioxide. 10. The optical switch according to claim 9 , further comprising an optical waveguide to propagate a beam of a light pulse and a focusing lens for focusing the beam of the light pulse, wherein an optical intensity of the beam of the light pulse is in a range of 0.1 mJ/cm 2 to 50 mJ/cm 2 , wherein a pulse width of the beam of the light pulse is in a range of in the range of 0.001 nanoseconds to 0.1 nanoseconds. 11. The optical switch according to claim 9 , further comprising an optical waveguide to propagate a beam of a light pulse and a metamaterial based lens for focusing the beam of the light pulse below diffraction resolution limit. 12. The optical switch according to claim 9 , further comprising a directionally coupled optical waveguides configuration or a multimode interference (MMI) coupler configuration or a Mach-Zehnder (MZ) configuration. 13. The optical switch according to claim 9 , further comprising coupling with a wavelength multiplexer or a wavelength demultiplexer. 14. The optical switch according to claim 9 , further comprising coupling with a wavelength tunable multiplexer or a wavelength tunable demultiplexer. 15. The optical switch according to claim 9 , further comprising coupling with a wavelength tunable photonic crystal multiplexer or a wavelength tunable photonic crystal demultiplexer. 16. The optical switch according to claim 9 , further comprising coupling with a wavelength converter. 17. The optical switch according to claim 16 , comprising the wavelength converter, wherein the wavelength converter comprises As 2 S 3 chalcogenide material or two-dimensional (2-D) photonic crystals As 2 S 3 chalcogenide material or graphene on two-dimensional (2-D) photonic crystals of a silicon waveguide. 18. The optical switch according to claim 16 , further comprising the wavelength converter, wherein the wavelength converter comprises a semiconductor optical amplifier or a quantum dot based semiconductor optical amplifier. 19. An optical network processor system comprising: (a) an optical switch comprising: a first optical waveguide and a second optical waveguide, wherein the first optical waveguide or the second optical waveguide comprises: a light slowing component or a light stopping component, wherein the light slowing component or the light stopping component comprises: metamaterials of negative refractive index or nanostructures, wherein the first optical waveguide is less than 5 microns in width, wherein the second optical waveguide is less than 5 microns in width, wherein a section of the first optical waveguide is substantially parallel within manufacturing tolerance to a section of the second optical waveguide, wherein the section of the first optical waveguide is optically coupled with an ultra thin-film of thickness less than 0.15 microns, wherein the section of the second optical waveguide is optically coupled with an ultra thin-film of thickness less than 0.15 microns, wherein the ultra thin-film comprises: vanadium dioxide, wherein the ultra thin-film is electrically coupled with two metal electrodes, wherein the ultra thin-film is receiving a voltage pulse or a current pulse via the two metal electrodes, lust to induce insulator-to-metal (IMT) phase transition in vanadium dioxide; and (b) an optical add-drop subsystem, wherein the optical add-drop subsystem comprises: a wavelength multiplexer and a wavelength demultiplexer, wherein the optical switch is optically coupled with the optical add-drop subsystem. 20. The optical network processor system according to claim 19 , further comprising a wavelength converter.

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What does patent US10185202B2 cover?
A fast optical switch can be fabricated/constructed, when a vanadium dioxide (VO2) and a two-dimensional (2-D) material is activated by either an electrical pulse (a voltage pulse or a current pulse) or a light pulse just to induce an insulator-to-metal phase transition (IMT) in vanadium dioxide. The applications of such a fast optical switch for an on-demand optical add-drop subsystem, integra…
Who is the assignee on this patent?
Mazed Mohammad A, Wiig Rex, Martinez Angel
What technology area does this patent fall under?
Primary CPC classification G02F1/21. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Jan 22 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).