Digital forward body biasing in CMOS circuits

Patent metadata

Field	Value
Publication number	US-10181848-B2
Application number	US-201715418331-A
Country	US
Kind code	B2
Filing date	Jan 27, 2017
Priority date	Jan 27, 2017
Publication date	Jan 15, 2019
Grant date	Jan 15, 2019

Abstract

Embodiments are described for digital forward body biasing CMOS circuits. In an embodiment, a power management unit limits the amount of time for which digital forward body biasing may be implemented. In another embodiment, once a CMOS circuit is put into a full digital forward body bias mode, the CMOS circuit is gradually brought back to a zero forward body bias mode. In another embodiment, charge is shared among biased transistor wells during transition intervals when transitioning from one bias mode to another.

First claim

What is claimed is:

1. A circuit comprising:
an FET (Field Effect Transistor);
a driver coupled to the FET; and
a power management unit coupled to the driver so that in response to a transition of a request signal, the driver puts the FET into a digital forward body bias mode for a time interval and puts the FET into a zero forward body bias mode upon expiration of the time interval, and wherein the driver puts the FET into the zero forward body bias mode upon expiration of the time interval independent of subsequent transitions of the request signal.

2. The circuit as set forth in claim 1 , wherein the transition of the request signal is an assertion of the request signal from a first voltage to a second voltage higher than the first voltage.

3. The circuit as set forth in claim 1 , wherein the power management unit comprises a timer, wherein the timer provides the time interval.

4. The circuit as set forth in claim 1 , wherein the FET is a pMOSFET (Metal Oxide Semiconductor Field Effect Transistor) comprising an n-well, and wherein the driver is an n-well driver coupled to the n-well of the pMOSFET.

5. The circuit as set forth in claim 4 , further comprising:
a supply rail;
a ground rail;
an nMOSFET having a p-well; and
a p-well driver coupled to the p-well of the nMOSFET,
wherein in response to the transition of the request signal, the n-well driver couples the n-well of the pMOSFET to the ground rail and the p-well driver couples the p-well of the nMOSFET to the supply rail, and wherein upon expiration of the time interval, the n-well driver couples the n-well of the pMOSFET to the supply rail and the p-well driver couples the p-well of the nMOSFET to the ground rail.

6. A circuit comprising:
an FET (Field Effect Transistor);
a driver coupled to the FET; and
a power management unit comprising a timer, wherein the power management unit sets and runs the timer in response to transitions of a first type of a request signal, wherein the power management unit is coupled to the driver so that the driver puts the FET into a digital forward body bias mode in response to the timer running and puts the FET into a zero forward body bias mode in response to the timer expiring.

7. The circuit as set forth in claim 6 , wherein the transitions of the first type of the request signal are assertions of the request signal from a first voltage to a second voltage higher than the first voltage.

8. The circuit as set forth in claim 6 , wherein the power management unit runs the timer independently of transitions of a second type of the request signal.

9. The circuit as set forth in claim 8 , wherein the transitions of the first type of the request signal are assertions of the request signal from a first voltage to a second voltage higher than the first voltage, and the transitions of the second type of the request signal are assertions of the request signal from the second voltage to the first voltage.

10. The circuit as set forth in claim 6 , wherein the FET is a pMOSFET (Metal Oxide Semiconductor Field Effect Transistor) comprising an n-well, and wherein the driver is an n-well driver coupled to the n-well of the pMOSFET.

11. The circuit as set forth in claim 10 , further comprising:
a supply rail;
a ground rail;
an nMOSFET having a p-well; and
a p-well driver coupled to the p-well of the nMOSFET,
wherein the n-well driver couples the n-well of the pMOSFET to the ground rail and the p-well driver couples the p-well of the nMOSFET to the supply rail in response to the timer running, and wherein the n-well driver couples the n-well of the pMOSFET to the supply rail and the p-well driver couples the p-well of the nMOSFET to the ground rail in response to the timer expiring.

12. The circuit as set forth in claim 6 , wherein expiration of the timer is based upon the timer counting to a threshold.

13. A circuit comprising:
a supply rail;
a ground rail;
a pMOSFET (Metal Oxide Semiconductor Field Effect Transistor) having an n-well;
an n-well driver comprising:
a pull-up pMOSFET having a drain terminal and an off-state current; and
a pull-down nMOSFET having a drain terminal and an off-state current less in magnitude than the off-state current of the pull-up pMOSFET, wherein the drain terminals of the pull-up pMOSFET and pull-down nMOSFET are each connected to the n-well of the pMOSFET; and

a power management unit coupled to the n-well driver so that when a request signal is at a first logic value, the pull-up pMOSFET is ON to couple the n-well of the pMOSFET to the supply rail and the pull-down nMOSFET is OFF, and in response to the request signal transitioning from the first logic value to a second logic value, the pull-up pMOSFET is switched OFF and the pull-down nMOSFET is switched ON to couple the n-well of the pMOSFET to the ground rail, and wherein when the request signal is at the second logic value, the n-well driver further switches OFF the pull-down nMOSFET.

14. The circuit as set forth in claim 13 , the n-well driver further comprising:
a logic gate having a first input port coupled to the drain terminals of the pull-up pMOSFET and the pull-down nMOSFET, a second input port coupled to a gate of the pull-up pMOSFET, and an output port coupled to a gate of the pull-down nMOSFET.

15. The circuit as set forth in claim 13 , the n-well driver further comprising:
a delay element; and
a logic gate having a first input port coupled to the delay element, a second input port coupled to a gate of the pull-up pMOSFET, and an output port coupled to a gate of the pull-down nMOSFET.

16. The circuit as set forth in claim 13 , further comprising:
an nMOSFET having a p-well; and
a p-well driver comprising:
a pull-up pMOSFET having a drain terminal and an off-state current; and
a pull-down nMOSFET having a drain terminal and an off-state current greater in magnitude than the off-state current of the pull-up pMOSFET, wherein the drain terminals of the pull-up pMOSFET and pull-down nMOSFET in the p-well driver are each connected to the p-well of the nMOSFET,

wherein the power management unit is coupled to the p-well driver so that when the request signal is at the first logic value, the pull-up pMOSFET of the p-well driver is OFF and the pull-down nMOSFET of the p-well driver is ON to couple the p-well of the nMOSFET to the ground rail, and in response to the request signal transitioning from the first logic value to the second logic value, the pull-down nMOSFET of the p-well driver is switched OFF and the pull-up pMOSFET of the p-well driver is switched ON to couple the p-well of the nMOSFET to the supply rail.

17. The circuit as set forth in claim 16 , wherein when the request signal is at the second logic value, the p-well driver further switches OFF the pull-up pMOSFET of the p-well driver.

Assignees

• Advanced Risc Mach Ltd

Inventors

• Prabhat Pranay
• Savanth Parameshwarappa Anand Kumar
• Myers James Edward

Classifications

• H03K2217/0036

  Means reducing energy consumption · CPC title

• H01L29/1087

  Electricity · mapped topic

• H03K17/6872 Primary

  using complementary field-effect transistors · CPC title

• H10D62/378

  Contact regions to the substrate regions · CPC title

• H03K17/04163 Primary

  in field-effect transistor switches · CPC title