Quantum-dot-in-perovskite solids

Patent metadata

Field	Value
Publication number	US-10181538-B2
Application number	US-201615063102-A
Country	US
Kind code	B2
Filing date	Mar 7, 2016
Priority date	Jan 5, 2015
Publication date	Jan 15, 2019
Grant date	Jan 15, 2019

Abstract

The present disclosure provides a composite material of a pre-formed crystalline or polycrystalline semiconductor particles embedded in a crystalline or polycrystalline perovskite matrix material. The pre-formed crystalline or polycrystalline semiconductor particles and and crystalline or polycrystalline perovskite being selected so that any lattice mismatch between the two lattices does not exceed about 10%. The pre-formed crystalline or polycrystalline semiconductor particles and said crystalline or polycrystalline perovskite matrix material have lattice planes that are substantially aligned.

First claim

What is claimed is:

1. A composite material, comprising:
pre-formed crystalline or polycrystalline particles embedded in a crystalline or polycrystalline matrix material, wherein the pre-formed crystalline or polycrystalline particles include lattice planes and the crystalline or polycrystalline matrix material include lattice planes, said pre-formed crystalline or polycrystalline particles and said crystalline or polycrystalline matrix material being selected so that any lattice mismatch between the two lattice planes does not exceed 10%, said pre-formed crystalline or polycrystalline particle lattice planes and said crystalline or polycrystalline matrix material lattice planes being substantially aligned such that the pre-formed crystalline or polycrystalline particles and said crystalline or polycrystalline matrix material are substantially atomically aligned.

2. The composite material according to claim 1 wherein said pre-formed crystalline or polycrystalline particles are semiconductor particles, and wherein said crystalline or polycrystalline matrix material is a semiconductor material.

3. The composite material according to claim 1 wherein said crystalline or polycrystalline matrix material is any one of ZnS, ZnSe, CdS, ZnTe, CdSe, PbI 2 , Cdl 2 , Nal, NaBr, NaCI, KI, KBr, KCI, Csl, CsBr, CsCI, and Cs 4 PbBr 6 .

4. The composite material according to claim 2 wherein said semiconductor particles are any one of PbS, PbSe, PbTe, PbSSe, CsPbI 3 , CsPbBr 3 , CdS, CdSe, CdTe, SnS, SnSe, SnTe, HgTe, FeO, NiO, TiO 2 , ZnO, ZnS, ZnSe, ZnTe, Bi 2 S 3 , Bi 2 Se 3 , Bi 2 Te 3 , Si, Ge, GaAs, GaN, GaP, GaSb, GaPAs, CuO, Cu 2 O, CuInS 2 , CuInSe 2 , CuInSSe, CuZnSnS 4 , InAs, InSb, InP, CulnP, CdSeTe, and Mn-doped ZnTe.

5. The composite material according to claim 2 wherein said crystalline or polycrystalline matrix material is a perovskite.

6. The composite material according to claim 5 wherein said perovskite is a perovskite material of form A 2 MX 4 , AMX 3 , ANX 4 , or BMX 4 , wherein
A is a monovalent cation or combination of monovalent cations selected from Li, Na, K, Rb, Cs, Fr, and primary, secondary, tertiary or quaternary organic ammonium compounds containing 1 to 15 carbons,
B is a divalent cation or combination of divalent cations selected from Mg, Co, Ca, Cd, Sr, Ba and primary, secondary, tertiary or quaternary organic ammonium compounds having 1 to 15 carbons,
M is a divalent metal cation or combination of divalent metal cations selected from Pb, Sn, Cu, Ni, Co, Fe, Cr, Pd, Cd, Eu, Yb, Ge,
N is selected from Bi and Sb, and
X is a monovalent anion or combination of monovalent anions selected from I, Br, CI, SCN, CN, OCN or BF 4 .

7. The composite material according to claim 5 wherein said perovskite is any one of (A)PbI 3 , (A)PbBr 3 , (A)PbCl 3 , (A)PbI x Br (3-x) , (A)PbI x Cl (3-x) , (X)PbBr x Cl (3-x) , NaPbI 3 CsPbI 3 , CsPbBr 3 , CsPbCl 3 , CsPbI x Br (3-x) , CsPbI x Cl (3-x) , CsPbBr x Cl (3-x) , KPbI 3 , where A is any one of methylammonium (CH 3 NH 3 ), ammonium (NH 4 ), formamidium (CH 2 (NH 2 ) 2 ), butylammonium (C 4 H 9 NH 3 ) and ethylammonium (CH 3 CH 2 NH 3 ).

8. The composite material according to claim 1 wherein said pre-formed crystalline or polycrystalline particles are present in the crystalline or polycrystalline matrix material in a volume ratio of 0.001% to 80%.

9. The composite material according to claim 1 wherein said pre-formed crystalline or polycrystalline particles have size in a range from 1 nm to 100 μm.

10. The composite material according to claim 1 wherein said pre-formed crystalline or polycrystalline particles are monodisperse.

11. A composite material, comprising:
pre-formed crystalline or polycrystalline semiconductor particles embedded in a crystalline or polycrystalline perovskite matrix material, wherein the pre-formed crystalline or polycrystalline particles include lattice planes and the crystalline or polycrystalline matrix material include lattice planes, said pre-formed crystalline or polycrystalline semiconductor particles and said crystalline or polycrystalline perovskite being selected so that any lattice mismatch between the two lattice planes does not exceed 10%;
said pre-formed crystalline or polycrystalline semiconductor particle lattice plane and said crystalline or polycrystalline perovskite matrix material lattice plane being substantially aligned such that the pre-formed crystalline or polycrystalline particles and said crystalline or polycrystalline matrix material are atomically aligned.

12. The composite material according to claim 11 wherein said perovskite matrix material is a perovskite material of form A 2 MX 4 , AMX 3 , ANX 4 , or BMX 4 , wherein
A is a monovalent cation or combination of monovalent cations selected from Li, Na, K, Rb, Cs, Fr, and primary, secondary, tertiary or quaternary organic ammonium compounds containing 1 to 15 carbons,
B is a divalent cation or combination of divalent cations selected from Mg, Co, Ca, Cd, Sr, Ba and primary, secondary, tertiary or quaternary organic ammonium compounds having 1 to 15 carbons,
M is a divalent metal cation or combination of divalent metal cations selected from Pb, Sn, Cu, Ni, Co, Fe, Cr, Pd, Cd, Eu, Yb, Ge,
N is selected from Bi and Sb, and
X is a monovalent anion or combination of monovalent anions selected from I, Br, CI, SCN, CN, OCN or BF 4 .

13. The composite material according to claim 11 wherein said perovskite is any one of (A)PbI 3 , (A)PbBr 3 , (A)PbCl 3 , (A)PbI x Br (3-x) , (A)PbI x Cl (3-x) , (X)PbBr x Cl (3-x) , NaPbI 3 CsPbI 3 , CsPbBr 3 , CsPbCl 3 , CsPbI x Br (3-x) , CsPbI x Cl (3-x) , CsPbBr x Cl (3-x) , (C 4 H 9 NH 3 ) 2 PbI 4 , (C 4 H 9 NH 3 ) 2 PbBr 4 , (C 4 H 9 NH 3 ) 2 PbCl 4 , (C 4 H 9 NH 3 ) 2 PbI x Br (4-x) , (C 4 H 9 NH 3 ) 2 PbI x Cl (4-x) , (C 4 H 9 NH 3 ) 2 PbBr x Cl (4-x) ,KPbI 3 , where A is any one of methylammonium (CH 3 NH 3 ), ammonium (NH 4 ), formamidium (CH 2 (NH 2 ) 2 ), and ethylammonium (CH 3 CH 2 NH 3 ).

14. The composite material according to claim 11 wherein said semiconductor particles are any one of PbS, PbSe, PbTe, PbSSe, CsPbI 3 , CsPbBr 3 , CdS, CdSe, CdTe, SnS, SnSe, SnTe, HgTe, FeO, NiO, TiO 2 , ZnO, ZnS, ZnSe, ZnTe, Bi 2 S 3 , Bi 2 Se 3 , Bi 2 Te 3 , Si, Ge, GaAs, GaN, GaP, GaSb, GaPAs, CuO, Cu 2 O, CuInS 2 , CuInSe 2 , CuInSSe, CuZnSnS 4 , InAs, InSb, InP, CulnP, CdSeTe, and Mn-doped ZnTe.

15. The composite material according to claim 11 wherein said semiconductor particles are metal chalcogenides.

16. The composite material according to claim 11 wherein said semiconductor particles are present in the perovskite matrix material in a volume ratio of 0.001% to 80%.

17. The composite material according to claim 11 wherein said pre-formed semiconductor particles have a size in a range from 1 nm to 100 μm.

18. The composite material according to claim 11 wherein said pre-formed semiconductor particles have a size in a range from 2 nm to 12 nm.

19. The composite material according to claim 11 wherein said semiconductor particles are present in the perovskite matrix material in a volume ratio of 0.1% to 50%.

20. The composite material according to claim 11 wherein said pre-formed semiconductor particles have a size in a range from 1 nm to 30 nm.

21. The composite material according to claim 11 wherein said pre-formed semiconductor particles are monodisperse.

22. The composite material according to claim 11 wherein said pre-formed crystalline or polycrystalline semiconductor part

Assignees

• Governing Council Univ Toronto

Inventors

• Ning Zhijun
• Gong Xiwen
• Comin Riccardo
• Voznyy Oleksandr
• Sargent Edward

Classifications

• B82Y30/00

  Nanotechnology for materials or surface science, e.g. nanocomposites · CPC title

• B82Y40/00

  Manufacture or treatment of nanostructures · CPC title

• H01L31/028

  Electricity · mapped topic

• C04B2235/768

  Perovskite structure ABO3 · CPC title

• H01L31/0368

  Electricity · mapped topic