Resistor element, method of manufacturing the same, and resistor element assembly

Patent metadata

Field	Value
Publication number	US-10181367-B2
Application number	US-201815992505-A
Country	US
Kind code	B2
Filing date	May 30, 2018
Priority date	Feb 13, 2017
Publication date	Jan 15, 2019
Grant date	Jan 15, 2019

Abstract

A resistor element includes a first terminal and a second terminal disposed on opposite end portions of a base substrate, respectively. A first resistance layer is connected to the first terminal and formed of a thick film resistor, and a second resistance layer is connected to the first resistance layer and the second terminal and is formed of a thin film resistor.

First claim

What is claimed is:

1. A resistor element comprising: a first terminal and a second terminal on opposite end portions of a base substrate, respectively; a first resistance layer electrically connected to the first terminal, comprising a thick film resistor; and a second resistance layer electrically connected to the first resistance layer and to the second terminal, comprising a thin film resistor, wherein the first resistance layer is on a first surface of the base substrate, and the second resistance layer is on a second surface of the base substrate opposing the first surface, wherein the first resistance layer and the second resistance layer are electrically connected to each other by a conductive via penetrating through the base substrate, and wherein the thick film resistor contains a ruthenium (Ru) oxide, and the thin film resistor contains at least one of a nickel chromium (NiCr) alloy, a titanium nitride (TiN) alloy, and a tantalum nitride (TaN) alloy.

2. The resistor element of claim 1 , wherein the first resistance layer and the second resistance layer are bonded to each other on one surface of the base substrate.

3. The resistor element of claim 1 , wherein at least one of the first terminal and the second terminal is electrically connected to at least one of the first resistance layer and the second resistance layer by a conductive via.

4. The resistor element of claim 1 , wherein the second resistance layer is trimmed, whereby a resistance value of the resistor element is established by carrying out a trimming process of the second resistance layer.

5. The resistor element of claim 1 , wherein the first resistance layer is a printed and fired layer, and the second resistance layer is a sputtered layer.

6. A method of manufacturing a resistor element, comprising: preparing a base substrate; forming a first internal electrode and a second internal electrode on opposite end portions of the base substrate, respectively; forming a first resistance layer electrically connected to the first internal electrode and formed of a thick film resistor; forming a second resistance layer electrically connected to the first resistance layer and to the second internal electrode and formed of a thin film resistor; forming a first external electrode and a second external electrode on the first internal electrode and the second internal electrode, respectively; and forming a conductive via penetrating through the base substrate to connect the first resistance layer and the second resistance layer to each other, wherein the first resistance layer is formed on a first surface of the base substrate, and the second resistance layer is formed on a second surface of the base substrate opposing the first surface, wherein the thick film resistor contains a ruthenium (Ru) oxide, and the thin film resistor contains at least one of a nickel chromium (NiCr) alloy, a titanium nitride (TiN) alloy, and a tantalum nitride (TaN) alloy.

7. The method of claim 6 , wherein the first resistance layer and the second resistance layer are formed to be bonded to each other on one surface of the base substrate.

8. The method of claim 6 , further comprising the steps of: measuring a resistance between the first internal electrode and the second internal electrode; and trimming the second resistance layer so that the measured resistance reaches a target resistance for the resistor element.

9. The method of claim 6 , wherein the first resistance layer is formed by a printing and firing process, and the second resistance layer is formed by a sputtering process.

10. A resistor element assembly comprising: a printed circuit board having first and second electrode pads thereon; and a resistor element on the printed circuit board, wherein the resistor element includes a first terminal and a second terminal on opposite end portions of a base substrate, respectively, a first resistance layer electrically connected to the first terminal and comprising a thick film resistor, and a second resistance layer electrically connected to the first resistance layer and the second terminal and comprising a thin film resistor, wherein the first resistance layer is on a first surface of the base substrate, and the second resistance layer is on a second surface of the base substrate opposing the first surface, wherein the first resistance layer and the second resistance layer are electrically connected to each other by a conductive via penetrating through the base substrate, and wherein the thick film resistor contains a ruthenium (Ru) oxide, and the thin film resistor contains at least one of a nickel chromium (NiCr) alloy, a titanium nitride (TiN) alloy, and a tantalum nitride (TaN) alloy.

11. A resistor element comprising: a base substrate; a thin film resistor on a first portion of an upper surface of the base substrate; a thick film resistor on a second portion of the upper surface of the base substrate and in contact with the thin film resistor; a first terminal in contact with the thin film resistor on at least a first side surface of the base substrate connected to the upper surface of the base substrate; and a second terminal in contact with the thick film resistor on at least a second side surface of the base substrate connected to the upper surface of the base substrate and opposing the first side surface; a first protective layer covering at least the thin film resistor; a second protective layer covering the first protective layer; and grooves in the first protective layer and the thin film resistor, wherein the thick film resistor contains a ruthenium (Ru) oxide, and the thin film resistor contains at least one of a nickel chromium (NiCr) alloy, a titanium nitride (TiN) alloy, and a tantalum nitride (TaN) alloy.

12. The resistor element of claim 11 , wherein the first protective layer includes glass and the second protective layer includes polymer.

13. The resistor element of claim 11 , wherein: the first terminal includes: a first internal electrode on the upper surface of the base substrate, between the base substrate and the thin film resistor, and on the first side surface of the base substrate, and a first external electrode on the upper surface of a portion of the first internal electrode on the upper surface of the base substrate and on a portion of the first internal electrode on the first side surface of the base substrate the second terminal includes: a second internal electrode on the upper surface of the base substrate, between the base substrate and the thick film resistor, and on the second side surface of the base substrate, and a second external electrode on the upper surface of a portion of the second internal electrode on the upper surface of the base substrate and on a portion of the second internal electrode on the second side surface of the base substrate.

14. A resistor element comprising: a base substrate; a thin film resistor on a first surface of the base substrate; a thick film resistor on a second surface of the base substrate opposing the first surface of the base substrate; and first and second terminals on first and second side surfaces of the base substrate, opposing each other and each connecting the first surface to the second surface, the first and second terminals electrically connected to the thin film resistor and thick film resistor, respectively, wherein the thin film resistor is electrically connected to the thick film resistor by a first conductive via within the base substrate; and wherein the thick film resistor contains a ruthenium (Ru) oxide, and the thin film resistor contains at least one of a nickel chromium (NiCr) alloy, a titanium nitride (TiN) alloy, and a tantalu

Assignees

• Samsung Electro Mech

Inventors

• Ryu Heung Bok
• Nam Teack Yong
• Lee Yong Joo
• Gu Sung Gil
• Nam Jung Min

Classifications

• H01C17/006

  adapted for manufacturing resistor chips · CPC title

• H01C17/065

  by thick film techniques, e.g. serigraphy · CPC title

• H01C1/01

  Mounting; Supporting · CPC title

• H05K1/111

  Pads for surface mounting, e.g. lay-out · CPC title

• H01C1/16 Primary

  Resistor networks not otherwise provided for · CPC title