Selective writes in a storage element

Patent metadata

Field	Value
Publication number	US-10181350-B2
Application number	US-201715842207-A
Country	US
Kind code	B2
Filing date	Dec 14, 2017
Priority date	Oct 26, 2016
Publication date	Jan 15, 2019
Grant date	Jan 15, 2019

Abstract

A method of writing a state to a correlated electron element in a storage circuit, comprising receiving a write command to write the state into the correlated electron element; reading a stored state of the correlated electron element; comparing the state and the stored state; and enabling a write driver to write the state into the correlated electron element when the state and read state are different.

First claim

The invention claimed is:

1. A method of writing a state to a correlated electron element in a storage circuit, the method comprising receiving a write command for writing the state into the correlated electron element; reading a stored state of the correlated electron element; comparing the state and the stored state; and enabling a write driver for writing the state into the correlated electron element when the state and read state are different wherein the reading of the stored state is read on a bitline coupled across a sense amplifier and the correlated electron element.

2. A method as claimed in claim 1 , wherein enabling the write driver includes resetting from a high-impedance state to a low impedance state or setting from a low-impedance state to a high impedance state.

3. A method as claimed in claim 1 , wherein the bitline is pulled down to a reference voltage when the state and the read state are the same.

4. A method as claimed in claim 1 , wherein the bitline is pulled up to a reference voltage when the state and read state are different.

5. A method as claimed in claim 1 , wherein reading occurs in a read-pulse where write is inactive.

6. A method as claimed in claim 1 , wherein writing occurs in a write-pulse where reading is not active.

7. A method as claimed in claim 6 , wherein the read and write pulses are done in separate clock cycles.

8. A method as claimed in claim 6 , wherein the read and write pulses are done in a single clock cycle.

9. A method as claimed in claim 8 , wherein the clock is a timing pulse to make a pulsed read.

10. A method as claimed in claim 9 , wherein the clock is a timing pulse to make a pulsed read.

11. A method as claimed in claim 1 , including in the event of the stored state and read state being matching states, not writing the state to be written into the correlated electron element.

12. A method as claimed in claim 11 , wherein the not writing the state to be written into the correlated electron element occurs in a second clock cycle, following a first clock cycle comprising reading the stored state.

13. A method as claimed in claim 1 , wherein the state of the correlated electron element is controllable by the write driver to be in one of a high impedance state and a low impedance state.

14. A method of saving data to a hard disk as claimed in claim 1 .

Assignees

• Advanced Risc Mach Ltd

Inventors

• Das Shidhartha
• Hansson Andreas
• Kumar Akshay
• Agarwal Piyush
• Bhavnagarwala Azeez Jennudin
• Shifren Lucian

Classifications

• G11C2213/31

  Material having complex metal oxide, e.g. perovskite structure · CPC title

• G11C2013/0054

  Read is performed on a reference element, e.g. cell, and the reference sensed value is used to compare the sensed value of the selected cell · CPC title

• G11C2207/2263

  Write conditionally, e.g. only if new data and old data differ · CPC title

• G11C13/0069 Primary

  Writing or programming circuits or methods · CPC title

• G11C13/0007

  comprising metal oxide memory material, e.g. perovskites · CPC title