UV light emitting device

Patent metadata

Field	Value
Publication number	US-10177273-B2
Application number	US-201514811253-A
Country	US
Kind code	B2
Filing date	Jul 28, 2015
Priority date	Mar 29, 2012
Publication date	Jan 8, 2019
Grant date	Jan 8, 2019

Abstract

A UV light emitting device includes: an n-type contact layer including an AlGaN layer or an AlInGaN layer; a p-type contact layer including a AlGaN layer or an AlInGaN layer; and an active layer of a multi-quantum well structure placed between the n-type contact layer and the p-type contact layer. The active area of the multi-quantum well structure includes barrier layers and well layers. The well layers include electrons and holes present according to probability distributions thereof. The barrier layers are formed of AlInGaN or AlGaN and have an Al content of 10% to 30%. At least one of the barrier layers disposed between the well layers has a smaller thickness than of the well layers and at least one of the barrier layers placed between the well layers has a thickness and a band gap preventing electrons and holes injected into and confined in a well layer adjacent to the barrier layer from spreading into another adjacent well layer.

First claim

What is claimed is:

1. An ultraviolet (UV) light emitting diode, comprising:
an n-type contact layer comprising an AlGaN layer or an AlInGaN layer;
a p-type contact layer comprising an AlGaN layer or an AlInGaN layer; and
a multi-quantum well structured active area disposed between the n-type contact layer and the p-type contact layer, the active area comprising well layers and barrier layers alternately stacked, wherein:
the barrier layers are formed of AlInGaN or AlGaN and comprise Al in an amount of 10% to 30%;
at least one of the barrier layers disposed between the well layers has a smaller thickness than at least one of the well layers; and
at least one of the barrier layers disposed between the well layers has a thickness and a band gap provided in a set ratio to prevent electrons and holes injected into and confined in a first well layer adjacent to a barrier layer from spreading into a second adjacent well layer,
wherein the p-type contact layer comprises a lower high concentration-doping layer, an upper high concentration-doping layer, and a low concentration-doping layer disposed between the lower high concentration-doping layer and the upper high concentration-doping layer.

2. The light emitting diode according to claim 1 , wherein the at least one of the barrier layers disposed between the well layers has a thickness of 50% to less than 100% of the thickness of at least one of the well layers.

3. The light emitting diode according to claim 1 , wherein the at least one of the barrier layers has a thickness of 2 nm to 3 nm and one of the well layers has a thickness of greater than 3 nm to 4 nm.

4. The light emitting diode according to claim 1 , wherein the well layers have an In content of 5% or less, the barrier layers have an In content of 1% or less, and the In content of the barrier layers is lower than the In content of the well layers.

5. The light emitting diode according to claim 1 , wherein the well layers have an Al content of 5% or less, the barrier layers have an Al content of 10% to 30%, and the thickness of each of the barrier layers is inversely proportional to the Al content contained therein.

6. The light emitting diode according to claim 1 , further comprising:
at least one electron control layer disposed between the n-type contact layer and the active area, the at least one electron control layer comprising AlInGaN or AlGaN and having a higher Al content than adjacent layers thereof.

7. The light emitting diode according to claim 1 , wherein the n-type contact layer comprises a modulation doped AlGaN layer.

8. An ultraviolet (UV) light emitting diode, comprising:
an n-type contact layer comprising an AlGaN layer or an AlInGaN layer;
a p-type contact layer comprising an AlGaN layer or an AlInGaN layer; and
a multi-quantum well structured active area disposed between the n-type contact layer and the p-type contact layer, the active area comprising well layers and barrier layers alternately stacked, wherein:
the barrier layers are formed of AlInGaN or AlGaN and comprise Al in an amount of 10% to 30%;
at least one of the barrier layers disposed between the well layers has a smaller thickness than at least one of the well layers; and
at least one of the barrier layers disposed between the well layers has a thickness and a band gap provided in a set ratio to prevent electrons and holes injected into and confined in a first well layer adjacent to a barrier layer from spreading into a second adjacent well layer,
wherein the n-type contact layer comprises a lower GaN layer, an upper AlGaN layer, and an intermediate layer comprising a multilayer structure disposed between the lower GaN layer and the upper AlGaN layer.

9. The light emitting diode according to claim 8 , wherein the intermediate layer of the multilayer structure comprises at least one pair of alternately stacked AlGaN and GaN layers.

10. The light emitting diode according to claim 8 , wherein the at least one of the barrier layers disposed between the well layers has a thickness of 50% to less than 100% of the thickness of at least one of the well layers.

11. The light emitting diode according to claim 8 , wherein the at least one of the barrier layers has a thickness of 2 nm to 3 nm and one of the well layers has a thickness of greater than 3 nm to 4 nm.

12. The light emitting diode according to claim 8 , wherein the well layers have an In content of 5% or less, the barrier layers have an In content of 1% or less, and the In content of the barrier layers is lower than the In content of the well layers.

13. The light emitting diode according to claim 8 , wherein the well layers have an Al content of 5% or less, the barrier layers have an Al content of 10% to 30%, and the thickness of each of the barrier layers is inversely proportional to the Al content contained therein.

14. An ultraviolet (UV) light emitting diode, comprising:
an n-type contact layer comprising an AlGaN layer or an AlInGaN layer;
a p-type contact layer comprising an AlGaN layer or an AlInGaN layer; and
a multi-quantum well structured active area disposed between the n-type contact layer and the p-type contact layer, the active area comprising well layers and barrier layers alternately stacked, wherein:
the barrier layers are formed of AlInGaN or AlGaN and comprise Al in an amount of 10% to 30%;
at least one of the barrier layers disposed between the well layers has a smaller thickness than at least one of the well layers;
at least one of the barrier layers disposed between the well layers has a thickness and a band gap provided in a set ratio to prevent electrons and holes injected into and confined in a first well layer adjacent to a barrier layer from spreading into a second adjacent well layer;
a superlattice layer disposed between the n-type contact layer and the active area; and
an electron injection layer disposed between the superlattice layer and the active area, the electron injection layer having a higher doping concentration of n-type impurities than the superlattice layer.

15. The light emitting diode according to claim 14 , further comprising:
an undoped AlGaN layer disposed between the n-type contact layer and the superlattice layer;
a low concentration AlGaN layer disposed between the undoped AlGaN layer and the superlattice layer and doped with n-type impurities in a lower concentration than the n-type contact layer; and
a high concentration AlGaN layer disposed between the low concentration AlGaN layer and the superlattice layer and doped with n-type impurities in a higher concentration than the low concentration AlGaN layer.

16. The light emitting diode according to claim 14 , wherein the at least one of the barrier layers disposed between the well layers has a thickness of 50% to less than 100% of the thickness of at least one of the well layers.

17. The light emitting diode according to claim 14 , wherein the at least one of the barrier layers has a thickness of 2 nm to 3 nm and one of the well layers has a thickness of greater than 3 nm to 4 nm.

18. The light emitting diode according to claim 14 , wherein the well layers have an In content of 5% or less, the barrier layers have an In content of 1% or less, and the In content of the barrier layers is lower than the In content of the well layers.

19. The light emitting diode according to claim 14 , wherein the well layers have an Al content of 5% or less, the barrier layers have an Al content of 10% to 30%, and the thickness of each of the barrier layers is inversely proportional to the Al

Assignees

• Seoul Viosys Co Ltd

Inventors

• Han Chang Suk
• Kim Hwa Mok
• Choi Hyo Shik
• Ko Mi So
• Lee A Ram Cha

Classifications

• H01L33/06 Primary

  Electricity · mapped topic

• H01L33/32

  Electricity · mapped topic

• H01L33/04

  Electricity · mapped topic

• H01L33/0025

  Electricity · mapped topic

• H01L33/14

  Electricity · mapped topic