Pixel structure and manufacturing method for the same

Patent metadata

Field	Value
Publication number	US-10177203-B2
Application number	US-201615313999-A
Country	US
Kind code	B2
Filing date	Sep 9, 2016
Priority date	Aug 23, 2016
Publication date	Jan 8, 2019
Grant date	Jan 8, 2019

Abstract

A pixel structure and manufacturing method thereof are provided. The pixel structure includes: a substrate; an anode electrode layer disposed on the substrate; a plurality of pixel units disposed on the anode electrode layer in rectangular array, where each of the pixel units includes four sub-pixel units arranged in rectangular array, and the emitting colors of the two opposite sub-pixel units at the opposite sides of any two adjacent pixel units are the same; and a cathode electrode layer disposed on the pixel units.

First claim

What is claimed is:

1. A pixel structure, comprising:
a substrate;
an anode electrode layer disposed on the substrate;
a plurality of pixel units disposed on the anode electrode layer in rectangular array, wherein each of the pixel units comprises four sub-pixel units arranged in rectangular array, and emitting colors of the two opposite sub-pixel units at opposite sides of any two adjacent pixel units are the same, wherein each of the pixel units comprises a red sub-pixel unit, a green sub-pixel unit, a blue sub-pixel unit, and a white sub-pixel unit;
a cathode electrode layer disposed on the pixel units; and
a hole transport layer, a hole injection layer, an electron transport layer, and an electron injection layer; each of the pixel units, the hole transport layer, the hole injection layer, and the anode electrode layer are stacked in sequence; and the cathode electrode layer, the electron injection layer, the electron transport layer, and each of the pixel units are stacked in sequence,
wherein the red sub-pixel unit comprises a yellow emitting layer and a red emitting layer which are sequentially disposed on the hole transport layer; the white sub-pixel unit comprises a blue emitting layer, a yellow emitting layer, and a red emitting layer which are sequentially disposed on the hole transport layer; a thickness of each area of the hole transport layer is a predetermined thickness, so that an emitting region of the red sub-pixel unit is in the corresponding red emitting layer, and an emitting region of the white sub-pixel unit is in a border between the corresponding yellow emitting layer and the corresponding blue emitting layer.

2. The pixel structure of claim 1 , wherein in each of the pixel units, the red sub-pixel unit is collinear with the white sub-pixel unit, and the blue sub-pixel unit is collinear with the white sub-pixel unit.

3. The pixel structure of claim 1 , wherein the sub-pixel units are made of electroluminescent materials.

4. A method for manufacturing a pixel structure, comprising the following steps of:
forming an anode electrode layer onto a substrate;
forming a hole injection layer onto the anode electrode layer;
forming a hole transport layer onto the hole injection layer;
forming a plurality of pixel units onto the hole transport layer, wherein the pixel units are arranged in rectangular array, each of the pixel units comprises four sub-pixel units arranged in rectangular array, and emitting colors of the two opposite sub-pixel units at opposite sides of any two adjacent pixel units are the same, wherein each of the pixel units comprises a red sub-pixel unit, a green sub-pixel unit, a blue sub-pixel unit, and a white sub-pixel unit;
forming an electron injection layer onto the pixel units;
forming an electron transport layer onto the electron injection layer; and
forming a cathode electrode layer onto the electron transport layer,
wherein the step of forming a plurality of pixel units onto the hole transport layer comprises the following steps of:
forming a green emitting layer onto the hole transport layer by a first metal mask;
forming a blue emitting layer onto the hole transport layer positioned at areas of the blue sub-pixel unit and the white sub-pixel unit by a second metal mask;
forming a yellow emitting layer onto the hole transport layer positioned at an area of the red sub-pixel unit and onto the blue emitting layer in the white sub-pixel unit by a third metal mask; and
forming a red emitting layer onto the yellow emitting layer in the red sub-pixel unit and onto the yellow emitting layer in the white sub-pixel unit by the third metal mask, and

wherein a thickness of each area of the hole transport layer is a predetermined thickness, so that an emitting region of the red sub-pixel unit is in the corresponding red emitting layer, and an emitting region of the white sub-pixel unit is in a border between the corresponding yellow emitting layer and the corresponding blue emitting layer.

5. The method for manufacturing the pixel structure of claim 4 , wherein in each of the pixel units, the red sub-pixel unit is collinear with the white sub-pixel unit, and the blue sub-pixel unit is collinear with the white sub-pixel unit.

Assignees

• Wuhan China Star Optoelectronics Technology Co Ltd
• Wuhan China Star Optoelectronics Technology Co Ltd

Inventors

• Chen Yung Sheng
• Hsu Hsiang Lun

Classifications

• H01L27/3213

  Electricity · mapped topic

• H01L21/84

  Electricity · mapped topic

• H01L51/0005

  Electricity · mapped topic

• H01L27/12

  Electricity · mapped topic

• H01L29/06

  Electricity · mapped topic