Image sensor having photodiodes sharing one color filter and one micro-lens

Patent metadata

Field	Value
Publication number	US-10177192-B2
Application number	US-201715454431-A
Country	US
Kind code	B2
Filing date	Mar 9, 2017
Priority date	Jul 4, 2016
Publication date	Jan 8, 2019
Grant date	Jan 8, 2019

Abstract

An image sensor is provides. The image sensor may include first and second photodiodes, a first color filter shared by the first and the second photodiodes, and first and second floating diffusion regions coupled to the first and the second photodiodes, respectively.

First claim

What is claimed is:

1. An image sensor comprising:
a first floating diffusion region, and first, second, third, and fourth photodiodes, which in combination form a first unit pixel;
a second floating diffusion region, and fifth, sixth, seventh, and eighth photodiodes, which in combination form a second unit pixel,
wherein the first, the second, the third, and the fourth photodiodes surround and share the first floating diffusion region,
wherein the fifth, the sixth, the seventh, and the eighth photodiodes surround and share the second floating diffusion region,
wherein the first, the third, the fifth, and the seventh photodiodes are arranged in a first direction,
wherein the first and the seventh photodiodes are located next to each other in the first direction,
wherein the second and the fourth photodiodes are arranged in a second direction which is perpendicular to the first direction,
wherein the sixth and the eighth photodiodes are arranged in a third direction which is perpendicular to the first direction and is parallel to the second direction, and
wherein the first floating diffusion region and the second floating diffusion region are arranged in the first direction.

2. The image sensor of claim 1 , further comprising:
a first color filter overlapping and shared by the first and the seventh photodiodes; and
a first micro-lens overlapping the first color filter.

3. The image sensor of claim 2 ,
wherein the first color filter has a first size,
wherein each of the first through eighth photodiodes has a second size, and
wherein the second size is a half of the first size.

4. The image sensor of claim 1 , further comprising:
first, second, third, and fourth transfer gates coupled between the first floating diffusion region and the first, the second, the third, and the fourth photodiodes, respectively, and
fifth, sixth, seventh, and eighth transfer gates coupled between the second floating diffusion region and the fifth the sixth, the seventh, and the eighth photodiodes, respectively.

5. The image sensor of claim 1 , further comprising:
a first color filter overlapping the first, the second, the third, and the fourth photodiodes, and
a second color filter overlapping the overlapping the fifth, the sixth, the seventh, and the eighth photodiodes.

6. The image sensor of claim 5 , further comprising:
a first micro-lens overlapping the first color filter; and
a second micro-lens overlapping the second color filter.

7. An image sensor comprising:
first to eighth photodiodes;
a color filter overlapping and shared by two or more of the first to eighth photodiodes; and
a micro-lens overlapping the color filter,
wherein the first and the fifth photodiodes are located next to each other, are symmetrical in shape to each other, and, in combination, form a rectangular shape,
wherein the second and the sixth photodiodes are located next to each other, are symmetrical in shape to each other, and, in combination, form a rectangular shape,
wherein the third and the seventh photodiodes are located next to each other, are symmetrical in shape to each other, and, in combination, form a rectangular shape, and
wherein the fourth and the eighth photodiodes are located next to each other, are symmetrical in shape to each other, and, in combination, form a rectangular shape.

8. The image sensor of claim 7 , wherein each of the first to eighth photodiodes is fanned in a trapezoid or a triangle shape.

9. The image sensor of claim 8 ,
wherein the color filter includes first, second, third, and fourth color filters,
wherein the first color filter overlaps and is shared by the first and the fifth photodiodes,
wherein the second color filter overlaps and is shared by the second and the sixth photodiodes,
wherein the third color filter overlaps and is shared by the third and the seventh photodiodes, and
wherein the fourth color filter overlaps and is shared by the fourth and the eighth photodiodes.

10. The image sensor of claim of claim 9 ,
wherein the micro-lens includes first, second, third, and fourth micro-lenses,
wherein the first micro-lens overlaps the first color filter,
wherein the second micro-lens overlaps the second color filter,
wherein the third micro-lens overlaps the third color filter, and
wherein the fourth micro-lens overlaps the fourth color filter.

11. The image sensor of claim 10 , further comprising:
a first floating region, and
wherein the first, the second, the third, and the fourth photodiodes are arranged to surround the first floating region,
wherein the first, the second, the third, and the fourth color filters are arranged to surround the first floating region, and
wherein the first, the second, the third, and the fourth micro-lenses are arranged to surround the first floating region.

12. The image sensor of claim 10 , further comprising:
a first transfer gate coupled between the first floating region and the first photodiode;
a second transfer gate coupled between the first floating region and the second photodiode;
a third transfer gate coupled between the first floating region and the third photodiode; and
a fourth transfer gate coupled between the first floating region and the fourth photodiode,
wherein (i) the first floating region, (ii) the first, the second, the third, and the fourth photodiodes, and (iii) the first, the second, the third, and the fourth transfer gates, in combination, form a unit pixel.

13. The image sensor of claim 8 ,
wherein the color filter includes first, second, third, fourth, and fifth color filters,
wherein the first color filter overlaps and is shared by the first, the second, the third, and the fourth photodiodes,
wherein the second color filter overlaps the fifth photodiode,
wherein the third color filter overlaps the sixth photodiode,
wherein the fourth color filter overlaps the seventh photodiode, and
wherein the fifth color filter overlaps the eighth photodiode.

14. The image sensor of claim of claim 13 ,
wherein the micro-lens includes first, fifth, sixth, seventh, and eighth micro-lenses,
wherein the first micro-lens overlaps the first color filter,
wherein the fifth micro-lens overlaps the fifth color filter,
wherein the sixth micro-lens overlaps the sixth color filter,
wherein the seventh micro-lens overlaps the seventh color filter, and
wherein the eighth micro-lens overlaps the eighth color filter.

15. The image sensor of claim 7 , further comprising:
a first floating diffusion region coupled to the first photodiode and further coupled to one or more of the second, the third, and the fourth photodiodes; and
a second floating diffusion region coupled to the fifth photodiode.

16. An image sensor comprising:
first and second photodiodes,
a first color filter shared by the first and the second photodiodes, and
first and second floating diffusion regions coupled to the first and the second photodiodes, respectively, and
a micro-lens overlapping the first color filter.

17. The image sensor of claim 16 , further comprising:
third, fourth, and fifth photodiodes,
wherein the first, the third, the fourth, and the fifth photodiodes surround and are coupled to the first floating diffusion region, and
wherein (i) the first, the third, the fourth, and the fifth photodiodes and (ii) the first floating diffusion region, in combination, form a first unit pixel.

18. The image sensor of claim 17 , further comprising:
sixth; seventh, and eighth photodiodes;
third, fourth, and fifth floating diffusion regions coup

Assignees

• Sk Hynix Inc

Inventors

• Lee Won-Jun

Classifications

• H04N25/134

  based on three different wavelength filter elements · CPC title

• H04N25/77

  Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components · CPC title

• H04N25/75

  Circuitry for providing, modifying or processing image signals from the pixel array · CPC title

• H04N5/3696

  Electricity · mapped topic

• H04N9/045

  Electricity · mapped topic