Display device and method for manufacturing same

Patent metadata

Field	Value
Publication number	US-10177170-B2
Application number	US-201214128437-A
Country	US
Kind code	B2
Filing date	Jun 18, 2012
Priority date	Jun 24, 2011
Publication date	Jan 8, 2019
Grant date	Jan 8, 2019

Abstract

This display device is provided with: a circuit substrate having a display region and a non-display region; pixel-driving TFTs for driving pixels, formed in the display region and having source electrodes and drain electrodes being spaced apart from each other on an insulating film and a first active layer formed from an oxide semiconductor, provided on the opposite side from the insulating film so as to cover a separation section between a source electrode and a drain electrode and part of the source electrode and part of the drain electrode adjacent to the separation section; and a driver circuit TFT for driving the pixel-driving TFTs, formed in the non-display region and having a second active layer formed from a non-oxide semiconductor.

First claim

The invention claimed is:

1. A display device, comprising:
a circuit substrate including:
a display region including a plurality of pixels; and
a non-display region outside a periphery of the display region;

pixel-driving thin film transistors that drive the pixels, each of the pixel-driving thin film transistors located in the display region of the circuit substrate and including:
a first gate electrode provided on a gate insulating film;
a first source electrode;
a first drain electrode located apart from the first source electrode provided on an interlayer insulating film; and
a first active layer made of an oxide semiconductor;

a base coat layer provided on the circuit substrate;
a driver circuit thin film transistor located in the non-display region of the circuit substrate and including:
a second gate electrode provided on the gate insulating film;
a second drain electrode provided on the interlayer insulating film; and
a second active layer made of a non-oxide semiconductor; and

an n-channel thin film transistor including:
a third active layer made of the same oxide semiconductor as the first active layer;
a third gate electrode provided on the gate insulating film; and
a third drain electrode provided on the interlayer insulating film; wherein

the first active layer and the third active layer are provided on the interlayer insulating film;
the second active layer is provided on the base coat layer;
the interlayer insulating film is provided over the first gate electrode and the second gate electrode; and
the third drain electrode is connected to the second active layer.

2. The display device according to claim 1 ,
wherein the driver circuit thin film transistor is a p-channel thin film transistor;
wherein a CMOS circuit includes the driver circuit thin film transistor and the n-channel thin film transistor; and
wherein the CMOS circuit is located in the non-display region of the circuit substrate.

3. The display device according to claim 2 ,
wherein the second active layer of the p-channel thin film transistor and the third active layer of the n-channel thin film transistor in the CMOS circuit do not overlap each other when viewed from a direction normal to a surface of the circuit substrate.

4. The display device according to claim 3 ,
wherein the second gate electrode of the p-channel thin film transistor extends in parallel with the third gate electrode of the n-channel thin film transistor.

5. The display device according to claim 3 ,
wherein the second gate electrode of the p-channel thin film transistor is connected to the third gate electrode of the n-channel thin film transistor and extends in a line shape.

6. The display device according to claim 2 ,
wherein the second active layer of the p-channel thin film transistor and the third active layer of the n-channel thin film transistor in the CMOS circuit overlap each other when viewed from a direction normal to a surface of the circuit substrate, and
wherein the p-channel thin film transistor and the n-channel thin film transistor include a common gate electrode.

7. The display device according to claim 1 , wherein the oxide semiconductor is an In—Ga—Zn—O-type oxide semiconductor.

8. The display device according to claim 2 , wherein
the circuit substrate includes a transparent insulating substrate on which the driver circuit thin film transistor, the pixel-driving thin film transistors, and the n-channel thin film transistor are located;
the second active layer of the p-channel thin film transistor is located on a side of the second gate electrode of the driver circuit thin film transistor closest to the transparent insulating substrate; and
the first active layer and the third active layer of the n-channel thin film transistor are located on a side of the first gate electrodes of the pixel-driving thin film transistors and the third gate electrode of the n-channel thin film transistor opposite to the transparent insulating substrate.

9. The display device according to claim 6 , wherein
the circuit substrate includes a transparent insulating substrate on which the driver circuit thin film transistor, the pixel-driving thin film transistors, and the n-channel thin film transistor are located;
the second active layer of the p-channel thin film transistor is located on a side of the second gate electrode of the driver circuit thin film transistor closest to the transparent insulating substrate;
the first active layers are located on a side of the first gate electrodes of the pixel-driving thin film transistors opposite to the transparent insulating substrate; and
the third active layer of the n-channel thin film transistor is located on a side of the third gate electrode of the n-channel thin film transistor opposite to the transparent insulating substrate.

10. The display device according to claim 1 , wherein
the first active layer covers a portion of the first source electrode and a portion of the first drain electrode on a side opposite to the interlayer insulating film.

11. The display device according to claim 1 , wherein
the second drain electrode and the third drain electrode are directly connected to one another.

12. The display device according to claim 1 , wherein
the third drain electrode is connected to the second active layer through a contact hole formed in the interlayer insulating film and the gate insulating film.

13. The display device according to claim 1 , wherein
the display device is an organic EL display device.

14. The display device according to claim 1 , wherein the base coat layer is an insulating layer.

15. The display device according to claim 1 , wherein the base coat layer is an insulating layer that is separated from the interlayer insulating film by the gate insulating film.

Assignees

• Miyamoto Tadayoshi
• Nakano Fumiki
• Sharp Kk

Inventors

• Miyamoto Tadayoshi
• Nakano Fumiki

Classifications

• G02F1/1368

  in which the switching element is a three-electrode device {(G02F1/136277 takes precedence)} · CPC title

• H01L27/1225 Primary

  Electricity · mapped topic

• H01L27/127

  Electricity · mapped topic

• H01L27/1251

  Electricity · mapped topic

• H10D86/471

  having different architectures, e.g. having both top-gate and bottom-gate TFTs · CPC title