Heat-dissipating structure and semiconductor module using same

Patent metadata

Field	Value
Publication number	US-10177069-B2
Application number	US-201515501374-A
Country	US
Kind code	B2
Filing date	Sep 9, 2015
Priority date	Sep 19, 2014
Publication date	Jan 8, 2019
Grant date	Jan 8, 2019

Abstract

A heat-dissipating structure is formed by bonding a first member and a second member, each being any of a metal, ceramic, and semiconductor, via a die bonding member; or a semiconductor module formed by bonding a semiconductor chip, a metal wire, a ceramic insulating substrate, and a heat-dissipating base substrate including metal, with a die bonding member interposed between each. At least one of the die bonding members includes a lead-free low-melting-point glass composition and metal particles. The lead-free low-melting-point glass composition accounts for 78 mol % or more in terms of the total of the oxides V2O5, TeO2, and Ag2O serving as main ingredients. The content of each of TeO2 and Ag2O is 1 to 2 times the content of V2O5, and at least one of BaO, WO3, and P2O5 is included as accessory ingredients, and at least one of Y2O3, La2O3, and Al2O3 is included as additional ingredients.

First claim

The invention claimed is:

1. A heat-dissipating structure comprising:
a first member and a second member each of which is metal, ceramic, or a semiconductor and which are bonded to each other with a die bonding member, which contains a lead-free low-melting glass composition and metal particles, interposed therebetween,
wherein the lead-free low-melting glass composition contains oxides comprising V 2 O 5 , TeO 2 , and Ag 2 O serving as main ingredients of which the total content of the oxides is 78 mol % or more of the lead-free low-melting glass composition,
the content of each of TeO 2 and Ag 2 O is 1 to 2 times the content of V 2 O 5 , and
the lead-free low-melting glass composition further contains one or more accessory ingredients selected from BaO, WO 3 , and P 2 O 5 of which the total content is 20 mol % or less of the lead-free low-melting glass composition, and one or more additional ingredients selected from Y 2 O 3 , La 2 O 3 , and Al 2 O 3 of which the total content is 2.0 mol % or less of the lead-free low-melting glass composition.

2. The heat-dissipating structure according to claim 1 , wherein a film made of Al, an Al alloy, Ag, or an Ag alloy is formed on a bonding surface of one or more of the first member or the second member, wherein the die bonding member is bonded to the bonding surface.

3. The heat-dissipating structure according to claim 1 , wherein the content of the accessory ingredients of the lead-free low-melting glass composition, which is contained in the die bonding member, is in the range of 3.7 to 16 mol % and the content of the additional ingredients of the lead-free low-melting glass composition is in the range of 0.2 to 1.0 mol %.

4. The heat-dissipating structure according to claim 1 , wherein the metal particles, which are contained in the die bonding member, contain one or more of Ag, Al, Sn, and Cu.

5. The heat-dissipating structure according to claim 1 , wherein the die bonding member comprises 5 to 60 vol % of the lead-free low-melting glass composition and 40 to 95 vol % of the metal particles.

6. The heat-dissipating structure according to claim 5 , wherein the die bonding member comprises 10 to 40 vol % of the lead-free low-melting glass composition and 60 to 90 vol % of the metal particles.

7. The heat-dissipating structure according to claim 1 , wherein the first member is a semiconductor or metal, and the second member is metal or ceramic.

8. A semiconductor module comprising:
a semiconductor chip, a metal wire, a ceramic insulating substrate, and a heat-dissipating base substrate containing metal, wherein the semiconductor chip, the metal wire, the ceramic insulating substrate, and the heat-dissipating base substrate are bonded with die bonding members interposed therebetween, respectively,
wherein one or more of the die bonding members contain a lead-free low-melting glass composition and metal particles,
the lead-free low-melting glass composition contains oxides comprising V 2 O 5 , TeO 2 , and Ag 2 O serving as main ingredients of which the total content of the oxides is 78 mol % or more of the lead-free low-melting glass composition,
the content of each of TeO 2 and Ag 2 O is 1 to 2 times the content of V 2 O 5 , and
the lead-free low-melting glass composition further contains one or more accessory ingredients selected from BaO, WO 3 , and P 2 O 5 of which the total content is 20 mol % or less of the lead-free low-melting glass composition, and one or more additional ingredients selected from Y 2 O 3 , La 2 O 3 , and Al 2 O 3 of which the total content is 2.0 mol % or less of the lead-free low-melting glass composition.

9. The semiconductor module according to claim 8 , wherein a film made of Al, an Al alloy, Ag, or an Ag alloy is formed on bonding surfaces of the semiconductor chip, the metal wire, the ceramic insulating substrate, and the heat-dissipating base substrate to which the die bonding members containing the lead-free low-melting glass composition and the metal particles are bonded.

10. The semiconductor module according to claim 8 , wherein the content of the accessory ingredients of the lead-free low-melting glass composition, which is contained in the die bonding member, is in the range of 3.7 to 16 mol % and the content of the additional ingredients of the lead-free low-melting glass composition is in the range of 0.2 to 1.0 mol %.

11. The semiconductor module according to claim 8 , wherein the metal particles, which are contained in the die bonding member, contain one or more of Ag, Al, Sn, and Cu.

12. The semiconductor module according to claim 8 , wherein the die bonding member contains 5 to 60 vol % of the lead-free low-melting glass composition and 40 to 95 vol % of the metal particles.

13. The semiconductor module according to claim 12 , wherein the die bonding member comprises 10 to 40 vol % of the lead-free low-melting glass composition and 60 to 90 vol % of the metal particles.

Assignees

• Hitachi Ltd
• Hitachi Ltd

Inventors

• Naito Takashi
• Kodama Motomune
• Aoyagi Takuya
• Kikuchi Shigeru
• Nogawa Takashi
• Mori Mutsuhiro
• Ide Eiichi
• Morita Toshiaki
• Konno Akitoyo
• Onodera Taigo
• Miyake Tatsuya
• Miyauchi Akihiro

Classifications

• H10W90/754

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W72/884

  Die-attach connectors and bond wires · CPC title

• H10W72/353

  not comprising solid metals or solid metalloids, e.g. ceramics · CPC title

• H10W72/352

  comprising metals or metalloids, e.g. solders · CPC title

• H10W72/325

  Die-attach connectors having a filler embedded in a matrix · CPC title