Thermal radiation barrier for substrate processing chamber components

Patent metadata

Field	Value
Publication number	US-10177014-B2
Application number	US-201314050196-A
Country	US
Kind code	B2
Filing date	Oct 9, 2013
Priority date	Dec 14, 2012
Publication date	Jan 8, 2019
Grant date	Jan 8, 2019

Abstract

An apparatus for a substrate support heater and associated chamber components having reduced energy losses are provided. In one embodiment, a substrate support heater is provided. The substrate support heater includes a heater body having a first surface to receive a substrate and a second surface opposing the first surface, a heating element disposed in the heater body between the first surface and the second surface, and a thermal barrier disposed on the second surface of the heater body, wherein the thermal barrier comprises a first layer and a second layer disposed on the first layer.

First claim

What is claimed is:

1. A substrate support heater for supporting a semiconductor substrate, comprising:
a heater body having a first surface configured to receive a substrate and a second surface opposing the first surface;
a heating element disposed in the heater body between the first surface and the second surface; and
a thermal barrier comprising yttrium material, deposited completely on the second surface of the heater body, wherein the thermal barrier comprises a first layer coupled to the second surface and a second layer deposited to on the first layer, the first layer and the second layer comprising the same yttrium material having a different density and a different thickness, and the thermal barrier has an emissivity of about 0.7 to about 0.9.

2. The substrate support heater of claim 1 , wherein the heater body includes a side surface and the thermal barrier is deposited on a portion of the side surface.

3. The substrate support heater of claim 2 , wherein the thermal barrier on the side surface includes a terminating end that tapers to a thickness of about zero.

4. The substrate support heater of claim 1 , further comprising:
a shaft coupled to the second surface of the heater body.

5. The substrate support heater of claim 4 , wherein the thermal barrier is disposed between the shaft and the heater body.

6. The substrate support heater of claim 1 , wherein a porosity of the first layer is different than a porosity of the second layer.

7. The substrate support heater of claim 1 , wherein an emissivity of the first layer is different than an emissivity of the second layer.

8. The substrate support heater of claim 1 , wherein the second layer includes a thickness that is less than a thickness of the first layer.

9. The substrate support heater of claim 1 , wherein the second layer includes a thickness that is about two-thirds less than a thickness of the first layer.

10. A deposition chamber for processing a semiconductor substrate, comprising:
an interior volume; and
a substrate support heater disposed in the interior volume, the substrate support heater comprising:
a heater body having a first surface to receive a substrate and a second surface opposing the first surface;
a heating element disposed in the heater body between the first surface and the second surface;
a shaft coupled to the second surface of the heater body; and
a first thermal barrier comprising yttrium material and deposited completely on the second surface of the heater body, and a second thermal barrier adhered to a portion of the heating element, wherein;
the first thermal barrier comprises a coating consisting of the yttrium material and includes at least a first layer and a second layer deposited on the first layer, the first layer and the second layer having a different density, and wherein an emissivity of the first layer is different than an emissivity of the second layer.

11. The chamber of claim 10 , wherein the second thermal barrier is disposed between the shaft and the heater body.

12. The chamber of claim 11 , wherein the second thermal barrier comprises a coating, sheet or a foil.

13. The chamber of claim 10 , wherein the second thermal barrier is arcuate and surrounds a portion of the heating element.

14. The chamber of claim 10 , wherein the first thermal barrier is disposed between the shaft and the second surface of the heater body.

15. The chamber of claim 10 , further comprising a lift plate at least partially disposed in the interior volume, the lift plate including a reflective surface facing the heater body.

16. The chamber of claim 10 , wherein the heater body includes a side surface and the first thermal barrier is deposited on a portion of the side surface.

17. The chamber of claim 16 , wherein the first thermal barrier on the side surface includes a terminating end that tapers to a thickness of about zero.

18. The chamber of claim 10 , wherein a porosity of the first layer is different than a porosity of the second layer.

Assignees

• Applied Materials Inc

Inventors

• Raj Govinda
• Martin Daniel
• Hirahara Robert T
• Bhatnagar Ashish
• Vasanth Bopanna
• Rao Prashanth
• Narendrnath Kadthala R

Classifications

• H10P72/7626

  characterised by the construction of the shaft · CPC title

• H10P72/0432 Primary

  mainly by conduction · CPC title

• H01L21/68792

  Electricity · mapped topic

• H01L21/67103 Primary

  Electricity · mapped topic