Optical recording medium

US10176839B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10176839-B2
Application numberUS-201515548155-A
CountryUS
Kind codeB2
Filing dateNov 18, 2015
Priority dateFeb 10, 2015
Publication dateJan 8, 2019
Grant dateJan 8, 2019

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

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An optical recording medium includes a reflective layer, a first dielectric layer, a phase-change recording layer, and a second dielectric layer. The phase-change recording layer has an average composition represented by SbxInyMz, in which M is at least one of Mo, Ge, Mn, and Al, and x, y, and z are values in the ranges 0.70≤x≤0.92, 0.05≤y≤0.20, and 0.03≤z≤0.10, respectively, provided that x+y+z=1, the first dielectric layer includes a zirconium oxide-containing composite material or tantalum oxide, and the second dielectric layer includes a chromium oxide-containing composite material or silicon nitride.

First claim

Opening claim text (preview).

The invention claimed is: 1. An optical recording medium, comprising: a reflective layer; a first dielectric layer; a phase-change recording layer; and a second dielectric layer, wherein the phase-change recording layer has an average composition represented by formula (1): SbxInyMz, wherein M is at least one of Mo, Mn, or Al, and x, y, and z are values in ranges 0.70≤x≤0.92, 0.05≤y≤0.20, and 0.03≤z≤0.10, respectively, provided that x+y+z=1, wherein the first dielectric layer comprises one of a zirconium oxide-containing composite material or tantalum oxide, and wherein the second dielectric layer comprises one of a chromium oxide-containing composite material or silicon nitride. 2. The optical recording medium according to claim 1 , wherein the first dielectric layer comprises a composite oxide comprising zirconium oxide and at least one of indium oxide or silicon oxide. 3. The optical recording medium according to claim 1 , wherein the first dielectric layer comprises a composite oxide comprising zirconium oxide and indium oxide, and wherein the composite oxide has zirconium oxide content of 20 mol % to 50 mol % and indium oxide content of 10 mol % to 50 mol %. 4. The optical recording medium according to claim 1 , wherein the second dielectric layer comprises a composite oxide comprising at least two of chromium oxide, zirconium oxide, or silicon oxide. 5. The optical recording medium according to claim 1 , wherein the second dielectric layer comprises a composite oxide comprising chromium oxide and zirconium oxide, and wherein the composite oxide has chromium oxide content of 20 mol % to 50 mol % and zirconium oxide content of 30 mol % to 70 mol %. 6. The optical recording medium according to claim 1 , wherein a thickness of the phase-change recording layer is one of less than or equal to 8 nm. 7. The optical recording medium according to claim 1 , wherein the optical recording medium has a recording linear velocity from 14 m/s to 23 m/s and a recording mark length one of less than or equal to 112 nm. 8. An optical recording medium, comprising: at least two recording layers, each recording layer of the at least two recording layers comprising a reflective layer, a first dielectric layer, a phase-change recording layer, and a second dielectric layer, wherein the phase-change recording layer has an average composition represented by formula (1): SbxInyMz, wherein M is at least one of Mo, Mn, or Al, and x, y, and z are values in ranges 0.70≤x≤0.92, 0.05≤y≤0.20, and 0.03≤z≤0.10, respectively, provided that x+y+z=1, wherein a first recording layer of the at least two recording layers is located deeper in the optical recording medium than a second recording layer of the at least two recording layers, wherein a sum of x and y in the first recording layer is smaller than the sum of x and y in second recording layer, wherein the first dielectric layer comprises one of a zirconium oxide-containing composite material or tantalum oxide, and wherein the second dielectric layer comprises one of a chromium oxide-containing composite material or silicon nitride.

Assignees

Inventors

Classifications

  • of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers · CPC title

  • Metals or elements of Groups 13, 14, 15 or 16 of the Periodic Table, e.g. B, Si, Ge, As, Sb, Bi, Se or Te · CPC title

  • Encryption, En-/decode, En-/decipher, En-/decypher, Scramble, (De-)compress · CPC title

  • Multiple laminated recording layers · CPC title

  • comprising inorganic materials only, e.g. ablative layers · CPC title

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What does patent US10176839B2 cover?
An optical recording medium includes a reflective layer, a first dielectric layer, a phase-change recording layer, and a second dielectric layer. The phase-change recording layer has an average composition represented by SbxInyMz, in which M is at least one of Mo, Ge, Mn, and Al, and x, y, and z are values in the ranges 0.70≤x≤0.92, 0.05≤y≤0.20, and 0.03≤z≤0.10, respectively, provided that x+y+…
Who is the assignee on this patent?
Sony Corp
What technology area does this patent fall under?
Primary CPC classification G11B7/24038. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Jan 08 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).