Gallium nitride sintered body or gallium nitride molded article, and method for producing same

Patent metadata

Field	Value
Publication number	US-10174419-B2
Application number	US-201113992486-A
Country	US
Kind code	B2
Filing date	Dec 20, 2011
Priority date	Dec 20, 2010
Publication date	Jan 8, 2019
Grant date	Jan 8, 2019

Abstract

The present invention provides a gallium nitride sintered body and a gallium nitride molded article which have high density and low oxygen content without using a special apparatus. According to the first embodiment, a gallium nitride sintered body, which is characterized by having density of 2.5 g/cm 3 to less than 5.0 g/cm 3 and an intensity ratio of the gallium oxide peak of the (002) plane to the gallium nitride peak of the (002) plane of less than 3%, which is determined by X-ray diffraction analysis, can be obtained. According to the second embodiment, a metal gallium-impregnated gallium nitride molded article, which is characterized by comprising a gallium nitride phase and a metal gallium phase that exist as separate phases and having a molar ratio, Ga/(Ga+N), of 55% to 80%, can be obtained.

First claim

The invention claimed is:

1. A gallium nitride sintered body,
wherein the sintered body has density of 2.5 g/cm 3 to less than 4.14 g/cm 3 and
an intensity ratio of the peak of gallium oxide in the (002) plane to the peak of gallium nitride in the (002) plane is less than 3%, as determined by X-ray diffraction analysis;
wherein voids contained therein have open pores and closed pores and the volume ratio of said open pores with respect to a total volume of said voids is not less than 70%.

2. The gallium nitride sintered body according to claim 1 , wherein the sintered body contains oxygen in an amount of not more than 11 atm %.

3. A metal gallium-impregnated gallium nitride molded article, comprising the gallium nitride sintered body according to claim 1 , wherein
metal gallium exists in at least part of voids contained in the sintered body;
said gallium nitride and said metal gallium exist in said molded article as separate phases; and
a molar ratio of Ga/(Ga+N) is 55% to 80% in the entirety of said molded article.

4. The metal gallium-impregnated gallium nitride molded article according to claim 3 , wherein not less than 30% of a total volume of said voids is filled with said metal gallium.

5. The metal gallium-impregnated gallium nitride molded article according to claim 3 , wherein the molded article has density of 3.20 g/cm 3 to less than 6.05 g/cm 3 .

6. The metal gallium-impregnated gallium nitride molded article according to claim 3 , wherein the molded article has resistance of not higher than 1 Ω·cm.

7. A method of producing the gallium a gallium nitride sintered body comprising:
obtaining a sintered body by sintering a gallium nitride powder having a specific surface area (BET) of 0.4 m 2 /g to 15 m 2 /g, untamped bulk density of not less than 0.4 g/cm 3 , and a repose angle of not larger than 40°;
heat-treating the obtained sintered body in an ammonia-containing atmosphere, and
thereby obtaining the gallium nitride sintered body according to claim 1 .

8. The method according to claim 7 , characterized in that said gallium nitride powder is obtained by subjecting a gallium oxide powder to a nitridation treatment in an ammonia atmosphere at a temperature of 1000° C. to 1100° C.

9. A method of producing the gallium nitride sintered body according to claim 3 , characterized in that the method comprises the step of impregnating a liquid metal gallium into the gallium nitride sintered body having density of 2.5 g/cm 3 to less than 5.0 g/cm 3 and an intensity ratio of the peak of gallium oxide in the (002) plane to the peak of gallium nitride in the (002) plane is less than 3%, as determined by X-ray diffraction analysis.

10. The method according to claim 9 , characterized in that said step of impregnating the liquid metal gallium into said gallium nitride sintered body includes the step of subjecting said gallium nitride sintered body and said metal gallium to a vacuum treatment in the same container and then isotropically applying a pressure to said container.

11. A gallium nitride sputtering target, comprising the gallium nitride sintered body according to claim 1 .

Assignees

• Mesuda Masami
• Matsumaru Keitaro
• Takahashi Koyata
• Kikuchi Ryou
• Shibutami Tetsuo
• Tosoh Corp

Inventors

• Mesuda Masami
• Matsumaru Keitaro
• Takahashi Koyata
• Kikuchi Ryou
• Shibutami Tetsuo

Classifications

• Y10T428/249921

  Web or sheet containing structurally defined element or component · CPC title

• C04B2235/77

  Density · CPC title

• C04B2235/662

  Annealing after sintering · CPC title

• C04B2235/6586

  Processes characterised by the flow of gas · CPC title

• C23C14/3414 Primary

  Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy · CPC title