Selective membrane supported on nanoporous graphene
US-2015273401-A1 · Oct 1, 2015 · US
Bonded body and power module substrate
US10173282B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10173282-B2 |
| Application number | US-201414909282-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 18, 2014 |
| Priority date | Aug 26, 2013 |
| Publication date | Jan 8, 2019 |
| Grant date | Jan 8, 2019 |
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- Title
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- Abstract
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Abstract
Official abstract text for this publication.
The bonded body of the present invention includes: a ceramic member made of ceramics; and a Cu member which is made of Cu or a Cu alloy and bonded to the ceramic member through a Cu—P—Sn-based brazing filler material and a Ti material, wherein a Cu—Sn layer, which is positioned close to the ceramic member and in which Sn forms a solid solution with Cu, and a Ti layer which is positioned between the Cu member and the Cu—Sn layer, are formed at a bonded interface between the ceramic member and the Cu member, a first intermetallic compound layer made of Cu and Ti is formed between the Cu member and the Ti layer, and a second intermetallic compound layer containing P is formed between the Cu—Sn layer and the Ti layer.
First claim
Opening claim text (preview).
The invention claimed is: 1. A bonded body comprising: a ceramic member made of ceramics; and a Cu member which is made of Cu or a Cu alloy and bonded to the ceramic member through a Cu—P—Sn-based brazing filler material and a Ti material, wherein a Cu—Sn layer, which is positioned close to the ceramic member and in which Sn forms a solid solution with Cu, and a Ti layer which is positioned between the Cu member and the Cu—Sn layer, are formed at a bonded interface between the ceramic member and the Cu member, a first intermetallic compound layer made of Cu and Ti is formed between the Cu member and the Ti layer, and a second intermetallic compound layer containing P is formed between the Cu—Sn layer and the Ti layer. 2. The bonded body according to claim 1 , wherein a thickness of the first intermetallic compound layer is set to be in a range of 0.5 μm to 10 μm. 3. The bonded body according to claim 1 , wherein a thickness of the Ti layer is set to be in a range of 1 μm to 15 μm. 4. A power module substrate comprising the bonded body according to claim 1 , wherein the substrate further comprises: a ceramic substrate formed of the ceramic member; and a circuit layer formed by bonding a Cu foil formed of the Cu member to a first surface of the ceramic substrate through the Cu—P—Sn-based brazing filler material and the Ti material, wherein the Cu—Sn layer, which is positioned close to the ceramic substrate and in which Sn forms a solid solution with Cu, and the Ti layer which is positioned between the circuit layer and the Cu—Sn layer, are formed at a bonded interface between the ceramic substrate and the circuit layer, the first intermetallic compound layer made of Cu and Ti is formed between the circuit layer and the Ti layer, and the second intermetallic compound layer containing P is formed between the Cu—Sn layer and the Ti layer. 5. The power module substrate according to claim 4 , wherein a metal layer is formed on a second surface of the ceramic substrate. 6. The power module substrate according to claim 5 , wherein the metal layer is formed by bonding a Cu foil made of Cu or a Cu alloy to the second surface of the ceramic substrate through a Cu—P—Sn-based brazing filler material and a Ti material, a Cu—Sn layer, which is positioned close to the ceramic substrate and in which Sn forms a solid solution with Cu, and a Ti layer which is positioned between the metal layer and the Cu—Sn layer, are formed at a bonded interface between the ceramic substrate and the metal layer, a first intermetallic compound layer made of Cu and Ti is formed between the metal layer and the Ti layer, and a second intermetallic compound layer containing P is formed between the Cu—Sn layer and the Ti layer. 7. The power module substrate according to claim 5 , wherein the metal layer is made of Al or an Al alloy. 8. The power module substrate according to claim 4 , wherein a thickness of the Ti layer is set to be in a range of 1 μm to 15 μm. 9. The bonded body according to claim 2 , wherein a thickness of the Ti layer is set to be in a range of 1 μm to 15 μm. 10. A power module substrate comprising the bonded body according to claim 2 , wherein the substrate further comprises: a ceramic substrate formed of the ceramic member; and a circuit layer formed by bonding a Cu foil formed of the Cu member to a first surface of the ceramic substrate through the Cu—P—Sn-based brazing filler material and the Ti material, wherein the Cu—Sn layer, which is positioned close to the ceramic substrate and in which Sn forms a solid solution with Cu, and the Ti layer which is positioned between the circuit layer and the Cu—Sn layer, are formed at a bonded interface between the ceramic substrate and the circuit layer, the first intermetallic compound layer made of Cu and Ti is formed between the circuit layer and the Ti layer, and the second intermetallic compound layer containing P is formed between the Cu—Sn layer and the Ti layer. 11. A power module substrate comprising the bonded body according to claim 3 , wherein the substrate further comprises: a ceramic substrate formed of the ceramic member; and a circuit layer formed by bonding a Cu foil formed of the Cu member to a first surface of the ceramic substrate through the Cu—P—Sn-based brazing filler material and the Ti material, wherein the Cu—Sn layer, which is positioned close to the ceramic substrate and in which Sn forms a solid solution with Cu, and the Ti layer which is positioned between the circuit layer and the Cu—Sn layer, are formed at a bonded interface between the ceramic substrate and the circuit layer, the first intermetallic compound layer made of Cu and Ti is formed between the circuit layer and the Ti layer, and the second intermetallic compound layer containing P is formed between the Cu—Sn layer and the Ti layer. 12. A power module substrate comprising the bonded body according to claim 9 , wherein the substrate further comprises: a ceramic substrate formed of the ceramic member; and a circuit layer formed by bonding a Cu foil formed of the Cu member to a first surface of the ceramic substrate through the Cu—P—Sn-based brazing filler material and the Ti material, wherein the Cu—Sn layer, which is positioned close to the ceramic substrate and in which Sn forms a solid solution with Cu, and the Ti layer which is positioned between the circuit layer and the Cu—Sn layer, are formed at a bonded interface between the ceramic substrate and the circuit layer, the first intermetallic compound layer made of Cu and Ti is formed between the circuit layer and the Ti layer, and the second intermetallic compound layer containing P is formed between the Cu—Sn layer and the Ti layer. 13. The power module substrate according to claim 10 , wherein a metal layer is formed on a second surface of the ceramic substrate. 14. The power module substrate according to claim 11 , wherein a metal layer is formed on a second surface of the ceramic substrate. 15. The power module substrate according to claim 12 , wherein a metal layer is formed on a second surface of the ceramic substrate. 16. The power module substrate according to claim 13 , wherein the metal layer is formed by bonding a Cu foil made of Cu or a Cu alloy to the second surface of the ceramic substrate through a Cu—P—Sn-based brazing filler material and a Ti material, a Cu—Sn layer, which is positioned close to the ceramic substrate and in which Sn forms a solid solution with Cu, and a Ti layer which is positioned between the metal layer and the Cu—Sn layer, are formed at a bonded interface between the ceramic substrate and the metal layer, a first intermetallic compound layer made of Cu and Ti is formed between the metal layer and the Ti layer, and a second intermetallic compound layer containing P is formed between the Cu—Sn layer and the Ti layer. 17. The power module substrate according to claim 14 , wherein the metal layer is formed by bonding a Cu foil made of Cu or a Cu alloy to the second surface of the ceramic substrate through a Cu—P—Sn-based brazing filler material and a Ti material, a Cu—Sn layer, which is positioned close to the ceramic substrate and in which Sn forms a solid solution with Cu, and a Ti layer which is positioned between the metal layer and the Cu—Sn layer, are formed at a bonded interface between the ceramic substrate and the metal layer, a first intermetallic compound layer made of Cu and Ti is formed between the metal layer and the Ti layer, and a second intermetallic compound layer containing P is formed between the
Assignees
Inventors
Classifications
with tin as the next major constituent · CPC title
Alloys based on copper · CPC title
with metallic articles · CPC title
Cu as the principal constituent · CPC title
with the principal constituent melting at less than 1550°C · CPC title
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Frequently asked questions
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- What does patent US10173282B2 cover?
- The bonded body of the present invention includes: a ceramic member made of ceramics; and a Cu member which is made of Cu or a Cu alloy and bonded to the ceramic member through a Cu—P—Sn-based brazing filler material and a Ti material, wherein a Cu—Sn layer, which is positioned close to the ceramic member and in which Sn forms a solid solution with Cu, and a Ti layer which is positioned between…
- Who is the assignee on this patent?
- Mitsubishi Materials Corp
- What technology area does this patent fall under?
- Primary CPC classification B23K35/262. Mapped technology areas include Operations & Transport.
- When was this patent published?
- Publication date Tue Jan 08 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).