Magnetic tunnel junction device utilizing lattice strain

Patent metadata

Field	Value
Publication number	US-10170695-B2
Application number	US-201615283272-A
Country	US
Kind code	B2
Filing date	Sep 30, 2016
Priority date	Oct 26, 2015
Publication date	Jan 1, 2019
Grant date	Jan 1, 2019

Abstract

A magnetic tunnel junction device includes a Heusler alloy layer that has not only a perpendicular magnetic anisotropy characteristic, but also a half-metallicity characteristic. For example, the magnetic tunnel junction device includes at least one Heusler alloy layer and a barrier layer. The barrier layer is in contact with the Heusler alloy layer and has an insulating property. A compressive strain is exerted on the Heusler alloy layer in a direction parallel to an interface between the Heusler alloy layer and the barrier layer.

First claim

What is claimed is:

1. A magnetic tunnel junction device, comprising:
a free layer formed of a first Heusler alloy layer having a first surface and a second surface opposite to the first surface;
a barrier layer having a first surface and a second surface, the first surface of the barrier layer being in contact with the first surface of the first Heusler alloy layer;
a reference layer formed of a composite of a second Heusler alloy layer and a Co/Pt multilayer, wherein the second Heusler alloy layer is interposed between the barrier layer and the Co/Pt multilayer and wherein the second Heusler alloy layer is in contact with the second surface of the barrier layer;
a buffer layer disposed on the second surface of the first Heusler alloy layer,
wherein the first Heusler alloy layer is interposed between the barrier layer and the buffer layer,
wherein each of the barrier layer and the buffer layer has an insulating property so that a compressive strain is exerted on the first Heusler alloy layer in a direction parallel to an interface between the first Heusler alloy layer and the barrier layer.

2. The magnetic tunnel junction device of claim 1 ,
wherein the first Heusler alloy layer is formed from a Co-based full-Heusler alloy having a L2 1 crystal structure.

3. The magnetic tunnel junction device of claim 2 ,
wherein the first Heusler alloy layer contains Co 2 MnSi.

4. The magnetic tunnel junction device of claim 3 ,
wherein the interface between the first Heusler alloy layer and the barrier layer is parallel to an xy-plane, and
when measured along an x-axis or a y-axis, a lattice constant of the barrier layer is within a range of 96% to 98%, compared with the lattice constant of the first Heusler alloy layer.

5. The magnetic tunnel junction device of claim 1 ,
wherein the barrier layer contains at least one of CaF 2 , CeO 2 , PrO 2 , SrTiO 3 , Sm 2 O 3 , Gd 2 O 3 , and Si.

6. The magnetic tunnel junction device of claim 1 ,
wherein the buffer layer is in contact with the second surface of the first Heusler alloy layer.

7. The magnetic tunnel junction device of claim 6 ,
wherein the buffer layer contains at least one of CaF 2 , CeO 2 , PrO 2 , SrTiO 3 , Sm 2 O 3 , Gd 2 O 3 , and Si.

8. A magnetic tunnel junction device, comprising:
a first magnetic layer comprising a first Heusler alloy having a first lattice parameter;
a barrier layer comprising a first surface and a second surface, wherein the first surface of the barrier layer that is in contact with the first magnetic layer, the barrier layer comprising a dielectric material and having a second lattice parameter, the second lattice parameter being smaller than the first lattice parameter;
a second magnetic layer comprising a second Heusler alloy that is in contact with the second surface of the barrier layer and a Co/Pt multilayer that is in contact with the second Heusler alloy, wherein the second Heusler alloy is interposed between the barrier layer and the Co/Pt multilayer; and
a buffer layer disposed on the first surface of the barrier layer so that the first magnetic layer is interposed between the barrier layer and the buffer layer,
wherein the buffer layer contains at least one of CaF 2 , CeO 2 , PrO 2 , SrTiO 3 , Sm 2 O 3 , Gd 2 O 3 , and Si.

9. The magnetic tunnel junction device of claim 8 ,
wherein the second lattice parameter of the barrier layer exerts a compressive strain on the first lattice parameter of the first magnetic layer.

10. The magnetic tunnel junction device of claim 8 ,
wherein the second lattice parameter is 96% to 98% of the first lattice parameter along the first surface.

11. The magnetic tunnel junction device of claim 8 ,
wherein the first magnetic layer comprises Co 2 MnSi, Co 2 FeSi, Co 2 FeAl, Co 2 CrAl or a combination thereof.

12. The magnetic tunnel junction device of claim 11 ,
wherein the barrier layer comprises CaF 2 , CeO 2 , PrO 2 , SrTiO 3 , Sm 2 O 3 , Gd 2 O 3 , and Si.

13. The magnetic tunnel junction device of claim 8 ,
wherein the second Heusler alloy has a third lattice parameter, the third lattice parameter being greater than the second lattice parameter.

14. The magnetic tunnel junction device of claim 13 ,
wherein the second lattice parameter is 96% to 98% of the third lattice parameter along the first surface.

15. The magnetic tunnel junction device of claim 13 ,
wherein the second lattice parameter of the barrier layer exerts a compressive strain on the first lattice parameter of the first magnetic layer and the third lattice parameter of the second magnetic layer.

16. A magnetoresistive device, comprising:
a first magnetic layer comprising a first Heusler alloy having a first lattice parameter;
a second magnetic layer comprising a second Heusler alloy having a second lattice parameter and a Co/Pt multilayer;
a barrier layer disposed between the first magnetic layer and the second magnetic layer and comprising a first surface and a second surface that is opposite from the first surface, the first surface being in contact with the first magnetic layer and the second surface being in contact with the second magnetic layer, the barrier layer comprising a dielectric material and having a third lattice parameter, the third lattice parameter being smaller than the first lattice parameter and the second lattice parameter; and
a buffer layer disposed on the first surface of the first magnetic layer opposite to the first surface so that the first magnetic layer is interposed between the barrier layer and the buffer layer,
wherein the buffer layer contains at least one of CaF 2 , CeO 2 , PrO 2 , SrTiO 3 , Sm 2 O 3 , Gd 2 O 3 , and Si.

17. The magnetoresistive device of claim 16 ,
wherein the third lattice parameter of the barrier layer exerts a compressive strain on the first lattice parameter of the first magnetic layer and the second lattice parameter of the second magnetic layer.

18. The magnetoresistive device of claim 17 ,
wherein the third lattice parameter of the barrier layer is 96% to 98% of the second lattice parameter of the second magnetic layer along the first surface.

19. The magnetoresistive device of claim 17 ,
wherein the first Heusler alloy comprises Co 2 MnSi, Co 2 FeSi, Co 2 FeAl, Co 2 CrAl, or a combination thereof, and
wherein the second Heusler alloy comprises Co 2 MnSi, Co 2 FeSi, Co 2 FeAl, Co 2 CrAl, or a combination thereof.

Assignees

• Sonobe Yoshiaki
• Itoh Hiroyoshi
• Samsung Electronics Co Ltd

Inventors

• Sonobe Yoshiaki
• Itoh Hiroyoshi

Classifications

• H01L27/228

  Electricity · mapped topic

• G11C11/161

  details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title

• H01L43/12

  Electricity · mapped topic

• H01L43/02

  Electricity · mapped topic

• H01L43/10 Primary

  Electricity · mapped topic