Apparatus and electronic devices including transistors comprising two-dimensional materials
US-2024339543-A1 · Oct 10, 2024 · US
Metal-doped cu(In,Ga) (S,Se)2 nanoparticles
US10170651B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10170651-B2 |
| Application number | US-201514607882-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 28, 2015 |
| Priority date | Jan 30, 2014 |
| Publication date | Jan 1, 2019 |
| Grant date | Jan 1, 2019 |
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Abstract
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Various methods are used to provide a desired doping metal concentration in a CIGS-containing ink when the CIGS layer is deposited on a photovoltaic device. When the doping metal is sodium, it may be incorporated by: adding a sodium salt, for example sodium acetate, together with the copper-, indium- and/or gallium-containing reagents at the beginning of the synthesis reaction of Cu(In,Ga)(S,Se) 2 nanoparticles; synthesizing Cu(In,Ga)(S,Se) 2 nanoparticles and adding a sodium salt to the reaction solution followed by mild heating before isolating the nanoparticles to aid sodium diffusion; and/or, using a ligand that is capable of capping the Cu(In,Ga)(S,Se) 2 nanoparticles with one end of its molecular chain and binding to sodium atoms with the other end of its chain.
First claim
Opening claim text (preview).
We claim: 1. A process for preparing sodium-doped nanocrystals comprising: adding a sodium dialkyldithiocarbamate to a mixture of copper-, indium-, and gallium-containing reagents at the beginning of a synthesis reaction to form sodium-doped Cu(In,Ga)(S,Se) 2 nanoparticles. 2. The process of claim 1 wherein the sodium dialkyldithiocarbamate is sodium diethyldithiocarbamate. 3. The process of claim 1 wherein the sodium dialkyldithiocarbamate is sodium dimethyldithiocarbamate. 4. The process of claim 1 wherein the sodium dialkyldithiocarbamate is sodium methylhexyldithiocarbamate. 5. The process of claim 1 wherein the sodium dialkyldithiocarbamate is sodium ethylhexyldithiocarbamate.
Assignees
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Classifications
Nanoparticles · CPC title
P-type · CPC title
- H10P14/3436Primary
being chalcogenide semiconductor materials not being oxides, e.g. ternary compounds · CPC title
using solutions · CPC title
CuInSe2 material PV cells · CPC title
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- What does patent US10170651B2 cover?
- Various methods are used to provide a desired doping metal concentration in a CIGS-containing ink when the CIGS layer is deposited on a photovoltaic device. When the doping metal is sodium, it may be incorporated by: adding a sodium salt, for example sodium acetate, together with the copper-, indium- and/or gallium-containing reagents at the beginning of the synthesis reaction of Cu(In,Ga)(S,Se…
- Who is the assignee on this patent?
- Nanoco Technologies Ltd, Nanoco Technologies Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10P14/3436. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jan 01 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).