Insulated gate bipolar transistor and diode

Patent metadata

Field	Value
Publication number	US-10170606-B2
Application number	US-201715640825-A
Country	US
Kind code	B2
Filing date	Jul 3, 2017
Priority date	Jul 6, 2016
Publication date	Jan 1, 2019
Grant date	Jan 1, 2019

Abstract

A semiconductor device includes a semiconductor layer having a first principal surface on one side thereof and a second principal surface on the other side thereof, a channel region of a first conductivity type formed at a surface layer portion of the first principal surface of the semiconductor layer, an emitter region of a second conductivity type formed at a surface layer portion of the channel region in the semiconductor layer, a drift region of the second conductivity type formed in a region of the second principal surface side with respect to the channel region in the semiconductor layer so as to be electrically connected to the channel region, a collector region of the first conductivity type formed at a surface layer portion of the second principal surface of the semiconductor layer so as to be electrically connected to the drift region, a cathode region of the second conductivity type formed at a surface layer portion of the second principal surface of the semiconductor layer so as to be electrically connected to the drift region and including a continuously laid around line-shaped pattern, and a gate electrode formed at the first principal surface side of the semiconductor layer so as to face the channel region across an insulating film.

First claim

What is claimed is:

1. A semiconductor device comprising:
a semiconductor layer having a first principal surface on one side thereof and a second principal surface on the other side thereof;
a channel region of a first conductivity type formed at a surface layer portion of the first principal surface of the semiconductor layer;
an emitter region of a second conductivity type formed at a surface layer portion of the channel region in the semiconductor layer;
a drift region of the second conductivity type formed in a region of the second principal surface side with respect to the channel region in the semiconductor layer so as to be electrically connected to the channel region;
a collector region of the first conductivity type formed at a surface layer portion of the second principal surface of the semiconductor layer so as to be electrically connected to the drift region;
a cathode region of the second conductivity type formed at a surface layer portion of the second principal surface of the semiconductor layer so as to be electrically connected to the drift region and including a line-shaped pattern continuously laid around, the line-shaped pattern including a pattern extending in a meandering form as viewed in plan; and
a gate electrode formed at the first principal surface side of the semiconductor layer so as to face the channel region across an insulating film.

2. The semiconductor device according to claim 1 , wherein the cathode region is formed in non-uniform pattern at the second principal surface of the semiconductor layer.

3. The semiconductor device according to claim 1 , wherein the second principal surface of the semiconductor layer has a first region where only the collector region is formed, and a second region where the collector region and the cathode region are formed, and
the first region is set at a peripheral edge portion of the second principal surface of the semiconductor layer.

4. The semiconductor device according to claim 1 , wherein the second principal surface of the semiconductor layer has a first region where only the collector region is formed, and a second region where the collector region and the cathode region are formed, and
the first region is set at a central portion of the second principal surface of the semiconductor layer.

5. The semiconductor device according to claim 1 , further comprising a gate pad formed at the first principal surface of the semiconductor layer so as to be electrically connected to the gate electrode,
wherein the cathode region is formed in a region outside a region facing the gate pad in the second principal surface of the semiconductor layer.

6. The semiconductor device according to claim 1 , wherein the line-shaped pattern of the cathode region includes a pattern extending in a comb teeth form as viewed in plan.

7. The semiconductor device according to claim 1 , wherein the line-shaped pattern of the cathode region includes a pattern extending in a spiral form as viewed in plan.

8. The semiconductor device according to claim 1 , wherein the cathode region includes a first line extending along a first direction, and a second line extending along a second direction intersecting the first direction.

9. The semiconductor device according to claim 1 , wherein the cathode region includes a plurality of first lines extending along a first direction and formed at intervals along a second direction intersecting the first direction, and a second line extending along the second direction and connected to the first lines adjacent mutually.

10. The semiconductor device according to claim 1 , further comprising a collector electrode formed at the second principal surface of the semiconductor layer and electrically connected to the collector region and the cathode region.

11. The semiconductor device according to claim 1 , wherein
the semiconductor layer has an active region,
the collector region is formed in the active region, and
the cathode region is formed in the active region.

12. The semiconductor device according to claim 11 , wherein a ratio S K /S A of an area S K of the cathode region with respect to an area S A of the active region is less than a ratio S c /S A of an area S c of the collector region with respect to the area S A of the active region.

13. The semiconductor device according to claim 12 , wherein the ratio S K /S A is equal to or less than 0.1.

14. A semiconductor device comprising:
a semiconductor layer having a first principal surface on one side thereof and a second principal surface on the other side thereof;
a channel region of a first conductivity type formed at a surface layer portion of the first principal surface of the semiconductor layer;
an emitter region of a second conductivity type formed at a surface layer portion of the channel region in the semiconductor layer;
a drift region of the second conductivity type formed in a region of the second principal surface side with respect to the channel region in the semiconductor layer so as to be electrically connected to the channel region;
a collector region of the first conductivity type formed at a surface layer portion of the second principal surface of the semiconductor layer so as to be electrically connected to the drift region;
a cathode region of the second conductivity type formed at a surface layer portion of the second principal surface of the semiconductor layer so as to be electrically connected to the drift region and including a line-shaped pattern continuously laid around, the line-shaped pattern including a pattern extending in a comb teeth form as viewed in plan; and
a gate electrode formed at the first principal surface side of the semiconductor layer so as to face the channel region across an insulating film.

15. A semiconductor device comprising:
a semiconductor layer having a first principal surface on one side thereof and a second principal surface on the other side thereof;
a channel region of a first conductivity type formed at a surface layer portion of the first principal surface of the semiconductor layer;
an emitter region of a second conductivity type formed at a surface layer portion of the channel region in the semiconductor layer;
a drift region of the second conductivity type formed in a region of the second principal surface side with respect to the channel region in the semiconductor layer so as to be electrically connected to the channel region;
a collector region of the first conductivity type formed at a surface layer portion of the second principal surface of the semiconductor layer so as to be electrically connected to the drift region;
a cathode region of the second conductivity type formed at a surface layer portion of the second principal surface of the semiconductor layer so as to be electrically connected to the drift region and including a line-shaped pattern continuously laid around, the line-shaped pattern including a pattern extending in a spiral form as viewed in plan; and
a gate electrode formed at the first principal surface side of the semiconductor layer so as to face the channel region across an insulating film.

Assignees

• Rohm Co Ltd

Inventors

• Shinsho Kohei

Classifications

• H10W20/40

  Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes · CPC title

• H10W72/926

  Multiple bond pads having different sizes · CPC title

• H01L29/7397 Primary

  Electricity · mapped topic

• H01L29/41708

  Electricity · mapped topic

• H01L29/083

  Electricity · mapped topic