Package on package architecture and method for making

Patent metadata

Field	Value
Publication number	US-10170409-B2
Application number	US-201315037276-A
Country	US
Kind code	B2
Filing date	Dec 23, 2013
Priority date	Dec 23, 2013
Publication date	Jan 1, 2019
Grant date	Jan 1, 2019

Abstract

Embodiments of the present disclosure are directed to package assemblies and methods for fabricating package assemblies. In one embodiment, a package assembly includes a die at least partially embedded in a mold compound; and a through mold via (TMV). The TMV may have vertical sides or may include two different portions with varying shapes. In some instances, prefabricated via bars may be used during fabrication. Package assemblies of the present disclosure may include package-on-package (POP) interconnects having a pitch of less than 0.3 mm. Other embodiments may be described and/or claimed.

First claim

What is claimed is:

1. A method of fabricating a package assembly, the method comprising:
forming a package-on-package (POP) land by partially embedding a prefabricated via bar in a region on a first side of a mold compound and extended to a location between the first side of the mold compound and a second side of the mold compound disposed opposite to the first side, wherein the prefabricated via bar extends across a plurality of package assemblies including a first package assembly and a second package assembly separated from the first package assembly, and wherein a die is at least partially embedded in the mold compound and has an active side proximal to the first side of the mold compound;
removing material of the mold compound to expose a portion of the POP land in a region on the second side of the mold compound after the forming of the POP land; and
depositing at least one of a conductive material, a passivation layer, or a noble metal on the exposed portion of the POP land.

2. The method of claim 1 , wherein:
forming the POP land includes laser drilling from the first side of the mold compound to form a cavity; and
depositing a conductive material to substantially fill the cavity.

3. The method of claim 2 , wherein:
depositing the conductive material to substantially fill the cavity includes depositing conductive material onto at least one contact of the die.

4. The method of claim 1 , wherein:
the prefabricated via bar has a first side proximal to the first side of the mold compound and a second side disposed opposite to the first side; and
wherein a distance between the second side of the prefabricated via bar and the second side of the mold compound is less than or equal to a distance between the second side of the die and the second side of the mold compound; and
removing material of the mold compound to expose the portion of the POP land includes uniformly removing material from the second side of the mold compound to expose a portion of the via bar.

5. The method of claim 1 , wherein:
depositing conductive material on the exposed POP land includes depositing conductive material on a plurality of exposed POP lands to form a plurality of POP interconnects having a pitch of less than 0.3 mm.

6. The method of claim 1 , wherein:
removing the material of the mold compound comprises laser drilling from the second side of the mold compound.

7. A package assembly comprising:
a die at least partially embedded in a mold compound with an active side proximal to a first side of the mold compound; and
a through mold via (TMV) within a cavity through the mold compound having
a first portion including a prefabricated via bar, extending from a second side of the mold compound to a location between the second side of the mold compound and the first side of the mold compound disposed opposite to the second side, in which a spacing between sides of the TMV decreases in a direction from the second side of the mold compound to the location between the first and second sides of the mold compound, wherein the prefabricated via bar extends across a plurality of package assemblies including a first package assembly and a second package assembly separated from the first package assembly, and
a second portion below the first portion along a direction from the second side of the mold compound to the first side of the mold compound, extending from the location between the first and second sides of the mold compound to the first side of the mold compound, in which a relationship between the sides of the TMV in the second portion is different from a relationship between the sides of the TMV in the first portion.

8. The package assembly of claim 7 , wherein:
a spacing between the sides of the TMV in the second portion increases in a direction from the location between the first and second sides of the mold compound to the first side of the mold compound.

9. The package assembly of claim 7 , wherein:
a spacing between the sides of the TMV in the second portion is substantially constant in a direction from the location between the first and second sides of the mold compound to the first side of the mold compound.

10. The package assembly of claim 7 , further comprising at least one prefabricated via bar at least partially embedded in the mold compound.

11. The package assembly of claim 10 , wherein:
the at least one prefabricated via bar defines at least a portion of the TMV having substantially vertical sides.

12. The package assembly of claim 7 , wherein:
the TMV is one of a plurality of TMVs having a pitch of less than 0.3 mm.

13. A method of fabricating a package assembly, the method comprising:
forming a cavity in a first side of a mold compound outside of a region defined by a die shadow, including forming a raised portion on a mold carrier prior to applying the mold compound, wherein the cavity extends to a location between the first side of the mold compound and a second side of the mold compound disposed opposite to the first side, and the die is at least partially embedded in the mold compound and has an active side proximal to the first side of the mold compound;
depositing a conductive material to form a through mold via (TMV) stop by substantially filling the cavity;
removing material from the second side of the mold compound to expose the TMV stop;
depositing at least one of a conductive material, a passivation layer, or a noble metal on the TMV stop; and
forming at least one cavity in a dielectric layer to expose the cavity in the first side of the mold compound outside of the region defined by the die shadow and forming at least one additional cavity in the dielectric layer to expose a die contact.

14. The method of claim 13 , wherein:
depositing the conductive material to form the TMV stop further includes depositing material to form a die interconnect by substantially filling the at least one additional cavity.

15. The method of claim 13 , wherein:
forming the cavity in the first side of the mold compound outside of the region defined by the die shadow includes forming a plurality of cavities outside of the region defined by the die shadow such that adjacent cavities define a pitch of less than 0.3 mm.

16. A computing device comprising:
a circuit board; and
a package assembly coupled with the circuit board, the package assembly including
a die at least partially embedded in a mold compound with an active side proximal to a first side of the mold compound; and
a through mold via (TMV) within a cavity through the mold compound having

a first portion of the TMV including a prefabricated via bar, extending from a second side of the mold compound to a location between the second side of the mold compound and the first side of the mold compound disposed opposite to the second side, in which a spacing between the sides of the TMV decreases in a direction from the second side of the mold compound to the location between the first and second sides of the mold compound, wherein the prefabricated via bar extends across a plurality of package assemblies including a first package assembly and a second package assembly separated from the first package assembly, and
a second portion of the TMV below the first portion of the TMV along a direction from the second side of the mold compound to the first side of the mold compound, extending from the location between the first and second sides of the mold compound to the first side of the mold compound, in which a relationship between the sides of the TMV in the second portion of the TMV is different from a relationship betw

Assignees

• Ganesan Sanka
• Guzek John S
• Nimkar Nitesh
• Reingruber Klaus
• Meyer Thorsten
• Intel Corp

Inventors

• Ganesan Sanka
• Guzek John S
• Nimkar Nitesh
• Reingruber Klaus
• Meyer Thorsten

Classifications

• H10W74/00

  Encapsulations, e.g. protective coatings · CPC title

• H10W90/291

  characterised by containers, encapsulations, or other housings for the stacked chips · CPC title

• H10W90/722

  between stacked chips · CPC title

• H10W70/60

  Insulating or insulated package substrates; Interposers; Redistribution layers (leadframes H10W70/40) · CPC title

• H10W90/724

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title