TiN pull-back and cleaning composition

Patent metadata

Field	Value
Publication number	US-10170296-B2
Application number	US-201515310647-A
Country	US
Kind code	B2
Filing date	May 12, 2015
Priority date	May 13, 2014
Publication date	Jan 1, 2019
Grant date	Jan 1, 2019

Abstract

The present invention relates to a novel composition that may be used to control the etching rate of TIN with respect to W, and remove any residues from the surface, e.g. organic or inorganic residues that could contain fluorine (F), which composition comprises a) an aliphatic or aromatic sulfonic acid; b) one or more inhibitor(s); c) an aprotic solvent; d) a glycol ether; and e) water. The present invention also relates to a kit comprising said composition in combination with an oxidant and optionally a stabilizer of the oxidant, and the use thereof.

First claim

What is claimed is:

1. A composition, comprising the following components a)-f), based on total weight of the composition:
a) 0.05-4 wt. % of an aliphatic or aromatic sulfonic acid;
b) 0.1 to 10 wt % of an inhibitor selected from the group consisting of imidazolidinones, imidazolidines, and 2-oxazolidinones;
c) 5 to 50 wt % of an aprotic solvent;
d) 1 to 60 wt % of a glycol ether;
e) water; and
an oxidant,
wherein a weight ratio of the aprotic solvent to the water is from 1:10 to 2:1 and wherein the oxidant is present in a volume ratio of components a) to e)to the oxidant ranging from 65:1 to 8:1.

2. The composition according to claim 1 , wherein said aliphatic or aromatic sulfonic acid is selected from the group consisting of: alkyl sulfonic acid, 3-(N-morpholino)propane sulfonic acid, 2-(N-morpholino)ethanesulfonic acid, N-cyclohexyl-2-aminoethanesulfonic acid, 3-[4-(2-hydroxyethyl)-1-piperazinyl]propanesulfonic acid, N-cyclohexyl-3-aminopropanesulfonic acid, and mixtures thereof.

3. The composition according to claim 2 , wherein the aliphatic or aromatic sulfonic acid is present in the composition in an amount ranging from 0.1 to 1 wt %, based on the total weight of the composition.

4. The composition according to claim 1 , wherein
said inhibitor is selected from the group consisting of imidazolidinones, imidazolidines, and mixtures thereof.

5. The composition according to claim 1 , wherein said aprotic solvent is selected from the group consisting of dimethyl sulfoxide, sulfolane, propylene carbonate, dimethylacetamide, N-methyl-2-pyrrolidone, dimethylformamide, and mixtures thereof.

6. The composition according to claim 5 , wherein the aprotic solvent is present in the composition in an amount ranging from 20 to 45 wt %, based on the total weight of the composition.

7. The composition according to claim 1 , wherein said glycol ether is selected from the group consisting of butyl diglycol, 2-hexoxy-1-ethanol, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, 2-(naphthalene-6-yloxy)polyethoxyethanol, ethylene glycol dimethyl ether, ethylene glycol diethyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monopropyl ether, diethylene glycol monoisopropyl ether diethylene glycol monobutyl ether, diethylene glycol monoisobutyl ether, diethylene glycol monobenzyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, triethylene glycol monomethyl ether, triethylene glycol dimethyl ether, polyethylene glycol monomethyl ether, diethylene glycol methyl ethyl ether, triethylene glycol ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, propylene glycol monomethyl ether, propylene glycol dimethyl ether, propylene glycol monobutyl ether, propylene glycol, monoproply ether, dipropylene glycol monomethyl ether, dipropylene glycol monopropyl ether, dipropylene glycol monoisopropyl ether, dipropylenemonobutyl ether, dipropylene glycol diisopropyl ether, tripropylene glycol monomethyl ether, 1-methoxy-2-butanol, 2-methoxy-1-butanol, 2-methoxy-2-methylbutanol, 1,1-dimethoxyethane, 2-(2-butoxyethoxy) ethanol, and mixtures thereof.

8. The composition according to claim 1 , further comprising a stabilizer selected from the group consisting of amine-N-oxide, citric acid, 1-hydroxyethane 1,1-diphosphonic acid, glycolic acid, lactic acid, hydroxybutyric acid, glyceric acid, malic acid, tartaric acid, malonic acid, succinic acid, glutaric acid, maleic acid, and mixtures thereof.

9. The composition according to claim 8 , wherein the stabilizer is present in the composition in an amount ranging from 0.01 to 0.5 wt %, based on the total weight of the composition.

10. The composition according to claim 1 , wherein the weight ratio of the aprotic solvent to the water is from 1:8 to 1:1 and wherein the oxidant is present in a volume ratio of components a) to e) to the oxidant ranging from 65:1 to 12:1.

11. The composition according to claim 1 , wherein said oxidant is selected from the group consisting of hydrogen peroxide, peroxide urea, peroxydisulfuric acid, ammonium persulfate, peroxymonosulfuric acid, pyrosulfuric acid, and ozone.

12. The composition according to claim 1 , wherein the aprotic solvent is selected from the group consisting of dimethyl sulfoxide (DMSO), dimethylacetamide (DMAc), dimethylformamide (DMF), and mixtures thereof.

13. The composition according to claim 12 , wherein said oxidant is selected from the group consisting of hydrogen peroxide, peroxide urea, peroxydisulfuric acid, ammonium persulfate, peroxymonosulfuric acid, pyrosulfuric acid, and ozone.

14. A removal process, comprising:
removing organic and/or inorganic residues from a surface by contacting said surface with the composition according to claim 1 .

15. The process according to claim 14 , wherein said oxidant is selected from the group consisting of hydrogen peroxide, peroxide urea, peroxydisulfuric acid, ammonium persulfate, peroxymonosulfuric acid, pyrosulfuric acid, and ozone.

16. The process according to claim 14 , wherein the organic and/or inorganic residues comprise fluorine.

17. The process according to claim 14 , further comprising:
etching TiN from the surface in the presence of tungsten.

18. An etching process, comprising:
etching TiN from a surface by contacting said surface with the composition according to claim 1 , in the presence of another metal.

Assignees

• Basf Se

Inventors

• Ke Jerry Jhih-Jheng
• Yu Tse Wei
• Cheng Yi-Ping

Classifications

• H10P50/73

  using masks for insulating materials · CPC title

• H10P50/667

  by liquid etching only · CPC title

• H10P50/283

  by chemical means · CPC title

• H10P70/234 Primary

  the processing being the formation of vias or contact holes · CPC title

• C11D17/041

  Compositions releasably affixed on a substrate or incorporated into a dispensing means · CPC title