Method for manufacturing an array of sensors on a single chip

Patent metadata

Field	Value
Publication number	US-10168309-B2
Application number	US-201815891699-A
Country	US
Kind code	B2
Filing date	Feb 8, 2018
Priority date	Apr 13, 2012
Publication date	Jan 1, 2019
Grant date	Jan 1, 2019

Abstract

A nanostructure sensing device comprises a semiconductor nanostructure having an outer surface, and at least one of metal or metal-oxide nanoparticle clusters functionalizing the outer surface of the nanostructure and forming a photoconductive nanostructure/nanocluster hybrid sensor enabling light-assisted sensing of a target analyte.

First claim

What is claimed is:

1. A method for manufacturing one or more nanoparticle gas sensors on a single chip, which sensors are configured to detect at least one type of gas, the method comprising:
providing a first semiconductor layer on top of a substrate layer;
transferring an etching pattern to the first semiconductor layer;
etching the first semiconductor layer to form a plurality of semiconductor electrodes; and
depositing either (a) first metal oxide nanoparticles and second metal oxide nanoparticles on a first subset of the plurality of semiconductor electrodes or (b) third metal oxide nanoparticles and first metal nanoparticles on the first subset of semiconductor electrodes, to generate a layer for at least some of the one or more nanoparticle gas sensors which adsorbs a first type of gas and a first interfering compound.

2. The method of claim 1 , wherein the one or more nanoparticle gas sensors on the single chip are a same type of gas sensor configured to detect a single type of gas.

3. The method of claim 1 , wherein the first semiconductor layer is made from GaN.

4. The method of claim 1 , wherein the one or more nanoparticle sensors on the single chip detect one or more of NO x , SO x , CO x , NH 3 and H 2 O, where x is an integer value.

5. The method of claim 1 , wherein the step of etching the first semiconductor layer is performed using at least one of reactive ion etching (RIE) or wet chemical etching.

6. The method of claim 1 , wherein a buffer layer is provided between the first semiconductor layer and the substrate layer.

7. The method of claim 1 , wherein all of the nanoparticles have a diameter of less than 200 nm.

8. The method of claim 1 , wherein the substrate layer is made from one of Si and Sapphire.

9. The method of claim 1 , wherein the at least one type of gas is at least two types of gases, the method further comprising:
depositing either (c) fourth metal oxide nanoparticles and fifth metal oxide nanoparticles on a second subset of the plurality of semiconductor electrodes or (d) sixth metal oxide nanoparticles and second metal nanoparticles on the second subset of semiconductor electrodes, to generate a layer for the one or more nanoparticle gas sensors which adsorbs a second type of gas and a second interfering compound.

10. The method of claim 9 , wherein the one or more nanoparticle sensors on the single chip detect two of NO x , SO x , CO x , NH 3 and H 2 O where x is an integer value.

11. The method of claim 1 , wherein said one or more nanoparticle sensors exhibit a change in output upon detection of said at least one type of gas, said output selected from the group consisting of current, voltage and resistance.

12. The method of claim 1 , wherein said one or more nanoparticle sensors enable detection of said at least one type of gas within a carrier gas of air, nitrogen or argon.

13. The method of claim 1 , wherein said one or more nanoparticle sensors exhibit increased conductivity upon exposure to said at least one type of gas in the presence of UV excitation.

14. A method for manufacturing one or more gas sensors on a single chip, which sensors are configured to detect at least one type of gas, the method comprising:
providing a first semiconductor layer on top of a substrate layer;
transferring an etching pattern to the first semiconductor layer;
etching the first semiconductor layer to form a plurality of semiconductor electrodes; and
depositing either (a) first metal oxide particles and second metal oxide particles on a first subset of the plurality of semiconductor electrodes or (b) third metal oxide particles and first metal particles on the first subset of semiconductor electrodes, to generate a layer for at least some of the one or more particle gas sensors which adsorbs a first type of gas and a first interfering compound wherein all of the particles have a diameter of less than 200 nm.

15. The method of claim 14 , wherein the one or more gas sensors on the single chip are a same type of gas sensor configured to detect a single type of gas.

16. The method of claim 14 , wherein the first semiconductor layer is made from GaN.

17. The method of claim 14 , wherein the one or more sensors on the single chip detect one or more of NO x , SO x , CO x , NH 3 and H 2 O where x is an integer value.

18. The method of claim 14 , wherein the step of etching the first semiconductor layer is performed using at least one of reactive ion etching (RIE) or wet chemical etching.

19. The method of claim 14 , wherein a buffer layer is provided between the first semiconductor layer and the substrate layer.

20. The method of claim 14 , wherein the substrate layer is made from one of Si and Sapphire.

21. The method of claim 14 , wherein the at least one type of gas is at least two types of gases, the method further comprising:
depositing either (c) fourth metal oxide particles and fifth metal oxide particles on a second subset of the plurality of semiconductor electrodes or (d) sixth metal oxide particles and second metal particles on the second subset of semiconductor electrodes, to generate a layer for the one or more particle gas sensors which adsorbs a second type of gas and a second interfering compound.

22. The method of claim 21 , wherein the one or more particle sensors on the single chip detect two of NO x , SO x , CO x , NH 3 and H 2 O, where x is an integer value.

23. The method of claim 14 , wherein said one or more particle sensors exhibit a change in output upon detection of said at least one type of gas, said output selected from the group consisting of current, voltage and resistance.

24. The method of claim 14 , wherein said one or more particle sensors enable detection of said at least one type of gas within a carrier gas of air, nitrogen or argon.

25. The method of claim 14 , wherein said one or more particle sensors exhibit increased conductivity upon exposure to said at least one type of gas in the presence of UV excitation.

Assignees

• Univ Maryland
• Us Commerce
• Univ George Mason
• Univ George Washington
• The Us Secretary Of Commerice

Inventors

• Motayed Abhishek
• Aluri Geetha
• Davydov Albert V
• Rao Mulpuri V
• Oleshko Vladimir P
• Bajpai Ritu
• Zaghloul Mona E

Classifications

• G01N33/0037

  NOx · CPC title

• G01N33/0054

  Ammonia · CPC title

• G01N33/0044

  Sulphides, e.g. H2S · CPC title

• G01N33/0047

  Organic compounds · CPC title

• Y02A50/246

  Cross-Sectional Technologies · mapped topic