Heat-resistant composite material production method and production device

Patent metadata

Field	Value
Publication number	US-10167549-B2
Application number	US-201615194887-A
Country	US
Kind code	B2
Filing date	Jun 28, 2016
Priority date	Feb 17, 2014
Publication date	Jan 1, 2019
Grant date	Jan 1, 2019

Abstract

In the present embodiment, in the production of a heat-resistant composite material resulting from impregnating a ceramic fiber preform with silicon carbide, a mixed gas containing starting material gas, an additive gas, and a carrier gas is supplied to a substrate having a minute structure such as a preform stored in an electric furnace, silicon carbide is deposited to form a film by means of a chemical vapor deposition method or a chemical vapor infiltration method, and the film formation growth speed and embedding uniformity are controlled by means of the amount of additive gas added to the starting material gas, the starting material gas contains tetramethylsilane, and the additive gas contains a molecule containing chlorine such as methyl chloride or hydrogen chloride. The film formation growth speed and embedding uniformity of the silicon carbide are both achieved.

First claim

What is claimed is:

1. A method of producing a heat-resistant composite material using chemical vapor deposition or chemical vapor infiltration, the method comprising:
accommodating a base material in a reaction furnace; and
causing precursor gas, additive gas, and carrier gas to flow in the reaction furnace to deposit silicon carbide on the base material for film formation,
wherein
the precursor gas comprises tetramethylsilane, and
the additive gas comprises hydrogen chloride,
wherein a mole ratio α of tetramethylsilane to hydrogen chloride satisfies 1<α≤3 where the number of moles of tetramethylsilane is 1.

2. The method of manufacturing a heat-resistant composite material according to claim 1 , wherein
the additive gas further comprises at least one selected from the group consisting of monochloromonomethylsilane, methyldichlorosilane, methyltrichlorosilane, dimethylmonochlorosilane, dimethyldichlorosilane, trimethylmonochlorosilane, monochlorosilane, dichlorosilane, trichlorosilane, tetrachloroethane, chlorodisilane, dichlorodisilane, hexachlorodisilane, octachlorotrisilane, monochloromethane, dichloromethane, chloroform, tetrachloromethane, monochloroacetylene, dichloroacetylene, monochloroethylene, dichloroethylene, trichloroethylene, tetrachloroethylene, monochloroethane, dichloroethane, trichloroethane, tetrachloroethane, pentachloroethane, hexachloroethane, monochloropropane, dichloropropane, trichloropropane, tetrachloropropane, pentachloropropane, hexachloropropane, heptachloropropane, octachloropropane, and chlorine molecules.

3. The method of manufacturing a heat-resistant composite material according to claim 2 , wherein the additive gas comprises monochloromethane.

4. The method of manufacturing a heat-resistant composite material according to claim 1 , wherein growth rate and filling uniformity at the film formation of silicon carbide are controlled through the amount of the additive gas.

5. The method of manufacturing a heat-resistant composite material according to claim 4 , wherein the film formation of silicon carbide follows a first-order reaction, and the growth rate and filling uniformity at the film formation of silicon carbide are controlled by controlling probability of a growth species sticking to the base material through the amount of the additive gas.

6. The method of manufacturing a heat-resistant composite material according to claim 4 , wherein the film formation of silicon carbide follows a Langmuir-Hinshelwood rate formula, and the growth rate and filling uniformity at the film formation of silicon carbide are controlled by adjusting the amount of the additive gas so that the film formation is performed in a zero-order reaction region of the Langmuir-Hinshelwood rate formula.

7. The method of manufacturing a heat-resistant composite material according to claim 4 , wherein both increasing the growth rate and ensuring the filling uniformity at the film formation of silicon carbide are implemented.

8. The method of manufacturing a heat-resistant composite material according to claim 4 , wherein the distribution of growth rate at the film formation of silicon carbide in terms of the position in the reaction furnace arranged side by side in the direction from upstream to downstream is controlled through the amount of hydrogen chloride as the additive gas.

9. The method of manufacturing a heat-resistant composite material according to claim 8 , wherein the distribution of growth rate is optimized to be uniform through the amount of hydrogen chloride as the additive gas.

10. The method of manufacturing a heat-resistant composite material according to claim 8 , wherein the precursor gas is supplied through a plurality of positions located across the reaction furnace from the upstream end to the downstream end.

11. The method of manufacturing a heat-resistant composite material according to claim 1 , wherein the precursor gas comprises at least one selected from the group consisting of methyltrichlorosilane and dimethyldichlorosilane.

12. The method of manufacturing a heat-resistant composite material according to claim 1 , wherein the carrier gas comprises at least one selected from the group consisting of hydrogen, nitrogen, helium, and argon.

13. The method of manufacturing a heat-resistant composite material according to claim 1 , wherein the additive gas includes an effect of inhibiting film formation.

14. The method of manufacturing a heat-resistant composite material according to claim 1 , wherein the base material comprises at least one selected from the group consisting of a fiber preform, a substrate provided with a trench, and a porous substrate.

15. The method of manufacturing a heat-resistant composite material according to claim 1 , wherein the reaction furnace is a hot-wall furnace.

Assignees

• Ihi Corp
• Univ Tokyo

Inventors

• Nakamura Takeshi
• Hotozuka Kozue
• Fukushima Yasuyuki
• Shimogaki Yukihiro
• Momose Takeshi
• Sugiura Hidetoshi
• Shima Kohei
• Funato Yuichi

Classifications

• H10P14/3408

  Silicon carbide · CPC title

• H10P14/2905

  Silicon, silicon germanium or germanium · CPC title

• H10P14/24

  using chemical vapour deposition [CVD] · CPC title

• C04B2235/614

  Gas infiltration of green bodies or pre-forms · CPC title

• C04B2235/5244

  Silicon carbide · CPC title