Preparation method of doped vanadium dioxide powder

Patent metadata

Field	Value
Publication number	US-10167223-B2
Application number	US-201514697481-A
Country	US
Kind code	B2
Filing date	Apr 27, 2015
Priority date	Jan 21, 2011
Publication date	Jan 1, 2019
Grant date	Jan 1, 2019

Abstract

The present invention relates to a hydrothermal method for preparing a doped vanadium dioxide powder, the doped powder having a chemical composition of V 1-X M X O 2 , 0<X≤0.5, and M is a doping element, which is introduced to control a particle size and a morphology of the doped powder, the doping element M is selected from a group consisting of manganese, iron, cobalt, nickel, copper, zinc, tin, indium, antimony, gallium, germanium, lead and bismuth, the method comprising a step of a precursor treatment of titrating a quadrivalent vanadium aqueous solution with a basic reagent to obtain a precursor suspension, wherein the precursor treatment involves titrating the quadrivalent vanadium aqueous solution until the emergence of the precursor suspension. The preparation methods for the present invention are easy to implement, low in cost, provide high yield, and are suitable for large scale production.

First claim

We claim:

1. A hydrothermal method for preparing a doped vanadium dioxide powder, the method comprising:
a step of titrating a quadrivalent vanadium aqueous solution having a V 4+ ion concentration between 0.005 and 0.5 mol/L with a basic reagent selected from the group consisting of ammonia, sodium hydroxide, potassium hydroxide, soda ash, sodium bicarbonate, potassium carbonate solution, potassium bicarbonate and combinations thereof, and at a mole ratio of the basic reagent to the quadrivalent vanadium ion V 4+ aqueous solution from 1:50 to 10:1, to obtain a precursor suspension having a chemical composition of V 4 H 6 O 10 ;
a step of mixing the precursor suspension with a doping agent in a hydrothermal reactor; and
a step of a hydrothermal reaction to obtain the doped vanadium oxide powder, wherein:
the doped vanadium oxide powder has a chemical composition of V 1-x M x O 2 , 0<X≤0.5, wherein M is a doping element selected from a group consisting of manganese, iron, cobalt, nickel, copper, zinc, tin, indium, antimony, gallium, germanium, lead and bismuth,
the doped vanadium oxide powder is in particle form of particles that have an aspect ratio of 1:1-10:1, and
the particles have a particle size of no more than 100 nm in at least one dimension.

2. The method of claim 1 , wherein the mole ratio of the basic reagent to the quadrivalent vanadium aqueous solution is 1:5 to 2:1.

3. The method of claim 1 , wherein a mole ratio of the doping element to the quadrivalent vanadium aqueous solution is 1:1000 to 1:1.

4. The method of claim 1 , further comprising a process of preparing a quadrivalent vanadium aqueous solution.

5. The method of claim 4 , further comprising a process of dissolving a soluble raw material into water, the soluble raw material including trivalent, quadrivalent, or pentavalent vanadic salts.

6. The method of claim 4 , further comprising a step of oxidization, reduction or dissolving pretreatment of insoluble vanadium raw material, the insoluble vanadium raw material including metal vanadium, vanadium oxides or their mixture.

7. The method of claim 1 , wherein a packing ratio of the hydrothermal reactor is 20%-90%, a reaction temperature is 200-400° C. and a holding time is 1-240 h.

8. The method of claim 7 , wherein the holding time is 2-120 h.

9. The method of claim 7 , wherein the packing ratio is 30-80%.

10. The method of claim 7 , wherein the holding time is 4-60 h.

Assignees

• Shanghai Inst Ceramics Cas

Inventors

• Gao Yanfeng
• Cao Chuanxiang
• Dai Lei
• Luo Hongjie
• Kanehira Minoru

Classifications

• H10P14/3434

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title

• B82Y40/00

  Manufacture or treatment of nanostructures · CPC title

• C01P2004/10

  extending in one dimension, e.g. needle-like · CPC title

• C03C3/127

  containing TiO2 as glass former · CPC title

• C01P2002/52

  containing elements as dopants · CPC title