Metal gates for semiconductor devices and method thereof
US-2024429281-A1 · Dec 26, 2024 · US
US10167192B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10167192-B2 |
| Application number | US-201615049404-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 22, 2016 |
| Priority date | Nov 15, 2010 |
| Publication date | Jan 1, 2019 |
| Grant date | Jan 1, 2019 |
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Disclosed herein is a structure having: a support, a plurality of nanowires perpendicular to the support, and an electrode in contact with a first end of each nanowire. Each nanowire has a second end in contact with the support. The electrode contains a plurality of perforations. The electrode contains a plurality of perforations. Also disclosed herein is a method of: providing the above support and nanowires; depositing a layer of a filler material that covers a portion of each nanowire and leaves a first end of each nanowire exposed; depositing a plurality of nanoparticles onto the filler material; depositing an electrode material on the nanoparticles, the ends of the nanowires, and any exposed filler material; and removing the nanoparticles and filler material to form an electrode in contact with the first end of each nanowire; wherein the electrode contains a plurality of perforations.
Opening claim text (preview).
What is claimed is: 1. A structure comprising: a support; a plurality of nanowires perpendicular to the support; and an electrode in contact with a first end of each nanowire; wherein each nanowire has a second end in contact with the support; and wherein the electrode contains a plurality of perforations; wherein each perforation comprises an open space forming a straight line path normal to the support and completely through the electrode. 2. The structure of claim 1 , wherein the nanowires and the perforations are periodically arranged. 3. The structure of claim 2 , wherein the nanowires and the perforations are arranged as a close-packed hexagonal array. 4. The structure of claim 1 , wherein there is an electrical connection between the nanowires and the electrode. 5. The structure of claim 1 , wherein the support is a substrate. 6. The structure of claim 1 , wherein the support is a second electrode. 7. The structure of claim 6 , wherein the second electrode contains a plurality of perforations. 8. The structure of claim 1 , wherein the nanowires and the support are both formed from a precursor substrate. 9. The structure of claim 1 , wherein the nanowires and the support comprise silicon. 10. The structure of claim 1 , wherein the electrode is formed by deposition of a vapor. 11. The structure of claim 1 , wherein the electrode is a continuous material. 12. The structure of claim 1 , wherein the electrode comprises titanium and gold. 13. A sensor comprising: the structure of claim 1 ; and a meter coupled to the structure to measure an electrical property of the structure. 14. A method comprising: providing the structure of claim 1 ; exposing the structure to a sample; and detecting any change in an electrical property of the structure.
Nanotechnology for materials or surface science, e.g. nanocomposites · CPC title
Electricity · mapped topic
involving nanosized elements, e.g. nanotubes, nanowires · CPC title
Electricity · mapped topic
Electricity · mapped topic
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