Negative-electrode active material, production process for the same and electric storage apparatus
US-2016006022-A1 · Jan 7, 2016 · US
Silicon material and negative electrode of secondary battery
US10164255B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10164255-B2 |
| Application number | US-201515314309-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 26, 2015 |
| Priority date | May 29, 2014 |
| Publication date | Dec 25, 2018 |
| Grant date | Dec 25, 2018 |
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- Title
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Abstract
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The silicon material has a band gap within a range of greater than 1.1 eV and not greater than 1.7 eV. A secondary battery in which this silicon material is used as a negative electrode active material has improved initial efficiency.
First claim
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The invention claimed is: 1. A silicon material having a band gap within a range of not less than 1.2 eV and not greater than 1.7 eV, wherein the silicon material contains nano-sized silicon crystallites. 2. The silicon material according to claim 1 , wherein the silicon crystallites have a crystallite size of 0.5 nm to 300 nm. 3. The silicon material according to claim 1 , wherein the silicon material is complex particles further containing at least one of amorphous silicon, a silicon oxide (SiOx, 0<x<2), or a silicon compound. 4. The silicon material according to claim 3 , wherein the silicon crystallites are present on a surface of and/or within the at least one of the amorphous silicon, the silicon oxide (SiOx, 0<x<2), or the silicon compound. 5. The silicon material according to claim 1 , wherein the silicon crystallites are dispersed in an island state within a matrix mainly formed from amorphous silicon, or adhere to surfaces of particles mainly formed from amorphous silicon, in an island state. 6. The silicon material according to claim 1 , wherein the silicon material has a BET specific surface area of 3 to 100 m 2 /g. 7. The silicon material according to claim 1 , wherein a contained oxygen (O) amount in the silicon material is not greater than 20 mass %. 8. The silicon material according to claim 1 , wherein an Si/O atom ratio in a composition of the silicon material is within a range of greater than 1/0.5 and not greater than 1/0.1. 9. A negative electrode active material composed of the silicon material according to claim 1 . 10. A negative electrode containing the negative electrode active material according to claim 9 . 11. A secondary battery comprising the negative electrode according to claim 10 . 12. The silicon material according to claim 1 , wherein the silicon crystallites have a crystallite size of 1 nm to 30 nm. 13. The silicon material according to claim 1 , wherein the silicon crystallites have a crystallite size of 1 nm to 10 nm.
Assignees
Inventors
Classifications
- C01B33/021Primary
Preparation (chemical coating from the vapour phase C23C16/00) · CPC title
- H01M4/48Primary
of inorganic oxides or hydroxides · CPC title
Compounds characterised by their crystallite size · CPC title
Surface area · CPC title
Electric properties · CPC title
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- What does patent US10164255B2 cover?
- The silicon material has a band gap within a range of greater than 1.1 eV and not greater than 1.7 eV. A secondary battery in which this silicon material is used as a negative electrode active material has improved initial efficiency.
- Who is the assignee on this patent?
- Toyota Jidoshokki Kk
- What technology area does this patent fall under?
- Primary CPC classification C01B33/021. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Dec 25 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).