Memristive element and electronic memory based on such elements
US-9331274-B2 · May 3, 2016 · US
Memristive device based on alkali-doping of transitional metal oxides
US10164179B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10164179-B2 |
| Application number | US-201715405555-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 13, 2017 |
| Priority date | Jan 13, 2017 |
| Publication date | Dec 25, 2018 |
| Grant date | Dec 25, 2018 |
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Abstract
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Embodiments are directed to a memristive device. The memristive device includes a first conductive material layer. An oxide material layer is arranged on the first conductive layer. And a second conductive material layer is arranged on the oxide material layer, wherein the second conductive material layer comprises a metal-alkali alloy.
First claim
Opening claim text (preview).
What is claimed is: 1. A memristive device comprising: a first conductive material layer; an oxide material layer arranged on the first conductive layer; and a second conductive material layer arranged directly on the oxide material layer, wherein the second conductive material layer comprises a metal-alkali alloy, wherein the second conductive material layer and the oxide material layer are configured to, in response to a positive voltage pulse applied to the second conductive material layer, cause the intercalation of alkali metal from the metal-alkali alloy in to the oxide material layer, and wherein the second conductive layer and the oxide material layer are configured to, in response to a negative voltage pulse applied to the second conductive material layer, cause the removal of the alkali metal from the oxide material layer. 2. The memristive device of claim 1 , wherein the oxide material layer comprises a transitional metal oxide. 3. A method of forming a memristive device, the method comprising: depositing an oxide material layer on a portion of a first conductive material layer; and depositing a second conductive material layer directly on a portion of the oxide material layer, wherein the second conductive material layer comprises a metal-alkali alloy; and configuring the second conductive layer and the oxide material layer such that, in response to a positive voltage pulse applied to the second conductive layer, the alkali metal intercalates into the oxide material layer. 4. The method of claim 3 , wherein the oxide material layer comprises a transitional metal oxide. 5. A memristive device comprising: a first conductive material layer; an oxide material layer arranged on the first conductive material layer; a diffusion barrier layer arranged directly on the oxide material layer; and a second conductive material layer arranged directly on the diffusion barrier layer, wherein the second conductive material layer comprises a metal-alkali alloy, wherein the second conductive material layer and the oxide material layer are configured to, in response to a positive voltage pulse applied to the second conductive material layer, cause the intercalation of an alkali metal in to the oxide material layer, and wherein the second conductive layer and the oxide material layer are configured to, in response to a negative voltage pulse applied to the second conductive material layer, cause the removal of the alkali metal from the oxide material layer. 6. The memristive device of claim 5 , wherein the oxide material layer is intercalated with an alkali metal. 7. The memristive device of claim 5 , wherein the oxide material layer comprises a transitional metal oxide. 8. The memristive device of claim 7 , wherein the transitional metal oxide comprises titanium oxide. 9. A method of forming a memristive device, the method comprising: depositing an oxide material layer on a portion of a first conductive material layer; depositing a diffusion barrier layer directly on a portion of the oxide material layer; depositing a second conductive material layer directly on a portion of the diffusion barrier layer, wherein the second conductive material layer comprises a metal-alkali alloy; and configuring the second conductive layer and the oxide material layer such that, in response to a positive voltage pulse applied to the second conductive layer, the alkali metal intercalates into the oxide material layer. 10. The method of claim 9 , wherein the oxide material layer comprises a transitional metal oxide. 11. The method of claim 9 , wherein the first conductive material layer comprises a fluorine doped tin oxide. 12. A memristive device comprising: a first conductive material layer; an oxide material layer arranged directly on the first conductive material layer, wherein the oxide material layer is exposed to an alkali metal for a duration of time causing the oxide material to include a first density of alkali metal; and a second conductive material layer arranged directly on the oxide material layer, wherein the second conductive material layer and the oxide material layer are configured to, in response to a positive voltage pulse applied to the second conductive material layer, cause the intercalation of an alkali metal in to the oxide material layer resulting in a second density of alkali metal in the oxide material layer; wherein the second conductive layer and the oxide material layer are configured to, in response to a negative voltage pulse applied to the second conductive material layer, cause the removal of the alkali metal from the oxide material layer resulting in a third density of alkali metal in the oxide material layer; wherein the second density is greater than the first density; and wherein the third density is less than the second density. 13. The method of claim 12 , wherein the oxide material layer comprises a transitional metal oxide. 14. The method of claim 13 , wherein the alkali metal comprises n-butyl lithium. 15. The method of claim 12 , wherein the second conductive material layer comprises a metal-alkali alloy.
Assignees
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Classifications
- G06N3/04Primary
Architecture, e.g. interconnection topology · CPC title
Backpropagation, e.g. using gradient descent · CPC title
Analogue means · CPC title
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US10164179B2 cover?
- Embodiments are directed to a memristive device. The memristive device includes a first conductive material layer. An oxide material layer is arranged on the first conductive layer. And a second conductive material layer is arranged on the oxide material layer, wherein the second conductive material layer comprises a metal-alkali alloy.
- Who is the assignee on this patent?
- IBM
- What technology area does this patent fall under?
- Primary CPC classification G06N3/04. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue Dec 25 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).