Semiconductor structure and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-10164029-B2
Application number	US-201614987598-A
Country	US
Kind code	B2
Filing date	Jan 4, 2016
Priority date	Dec 18, 2015
Publication date	Dec 25, 2018
Grant date	Dec 25, 2018

Abstract

A semiconductor structure includes a substrate, at least one first gate structure, at least one first spacer, at least one source drain structure, and a conductive plug. The first gate structure is present on the substrate. The first spacer is present on at least one sidewall of the first gate structure. The source drain structure is present adjacent to the first spacer. The conductive plug is electrically connected to the source drain structure while leaving a gap between the conductive plug and the spacer.

First claim

What is claimed is:

1. A semiconductor structure, comprising:
a substrate;
at least one first gate structure present on the substrate;
a mask layer on a top surface of the first gate structure, the mask layer being coterminous with the first gate structure;
at least one first spacer present on at least one sidewall of the first gate structure and at least one sidewall of the mask layer;
at least one source drain structure present adjacent to the first spacer, wherein the at least one first spacer extends along a sidewall of the at least one source drain structure; and
a conductive plug electrically connected to the source drain structure while leaving a gap between the conductive plug and the first spacer, wherein the gap contacts the conductive plug.

2. The semiconductor structure of claim 1 , wherein the gap has gas therein.

3. The semiconductor structure of claim 1 , further comprising:
at least one second gate structure present on the substrate; and
at least one second spacer present on at least one sidewall of the second gate structure, wherein the source drain structure has been present between the first spacer and the second spacer.

4. The semiconductor structure of claim 3 , wherein the gap further exists between the conductive plug and the second spacer.

5. The semiconductor structure of claim 1 , further comprising:
a dielectric layer present at least on the first gate structure, the dielectric layer having an opening therein, wherein at least a portion of the conductive plug has been present in the opening, and the gap further exists between the conductive plug and at least one sidewall of the opening.

6. The semiconductor structure of claim 5 , wherein the conductive plug protrudes from the opening.

7. The semiconductor structure of claim 5 , wherein the mask layer is between the first gate structure and the dielectric layer.

8. The semiconductor structure of claim 1 , wherein the source drain structure comprises at least one source drain stressor.

9. A semiconductor structure, comprising:
a substrate;
at least one gate structure present on the substrate;
at least one source drain structure present on the substrate;
at least one dielectric layer present at least on the gate structure and having an opening therein, wherein the source drain structure has been exposed through the opening; and
a conductive plug electrically connected to the source drain structure at least through the opening while leaving a gap between the conductive plug and at least one sidewall of the opening, wherein a bottommost portion of the gap is level with a topmost portion of the source drain structure and a topmost portion of the source drain structure is above a bottommost portion of the gate structure.

10. The semiconductor structure of claim 9 , further comprising:
at least one spacer present on at least one sidewall of the gate structure, wherein at least a portion of the spacer has been exposed through the opening, and the gap further exists between the conductive plug and said portion of the spacer.

11. The semiconductor structure of claim 9 , wherein the gap has been gas-filled.

12. The semiconductor structure of claim 9 , wherein the conductive plug protrudes from the opening.

13. The semiconductor structure of claim 9 , further comprising:
a hard mask layer present between the gate structure and the dielectric layer.

14. A semiconductor structure, comprising:
a first gate structure and a second gate structure;
a first source drain region interposed between the first gate structure and the second gate structure;
a first spacer on a first sidewall of the first gate structure and on a first sidewall of the first source drain region, and a second spacer on a second sidewall of the second gate structure and on a second sidewall of the first source drain region, the first and second spacers facing one another;
a contact plug extending between the first and second spacers and contacting the first source drain region; and
air gap immediately interposed between the contact plug and the first spacer and between the contact plug and the second spacer.

15. The semiconductor structure of claim 14 , further comprising a dielectric layer extending over the first gate structure and the second gate structure; and
wherein the air gap extends between the contact plug and the a sidewall of the dielectric layer.

16. The semiconductor structure of claim 15 , further comprising an etch stop layer overlying the dielectric layer.

17. The semiconductor structure of claim 15 , further comprising a hard mask layer interjacent the first gate structure and the dielectric layer.

18. The semiconductor structure of claim 14 , wherein a lower portion of the first spacer contacts the first source drain region.

19. The semiconductor structure of claim 14 , wherein the contact plug has a first width at a lowermost portion and a second width at an uppermost portion, the second width being greater than the first width.

20. The semiconductor structure of claim 14 , wherein a topmost surface of the first source drain region is above a bottommost surface of the first gate structure.

Assignees

• Taiwan Semiconductor Mfg Co Ltd
• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Chang Che-Cheng
• Lin Chih-Han
• Tseng Horng-Huei

Classifications

• H10P50/283

  by chemical means · CPC title

• H10W20/0765

  the thin functional dielectric layers being temporary, e.g. sacrificial layers · CPC title

• H10W20/072

  of dielectric parts comprising air gaps · CPC title

• H10W20/069

  by forming self-aligned vias or self-aligned contact plugs · CPC title

• H10W20/46

  comprising air gaps · CPC title